Ferrite material NiCuZn with large current-resistant property and low-temperature sintering property and preparation method thereof

Abstract

The invention belongs to the technical fields of electronic ceramic materials and preparation thereof, and particularly relates to a ferrite material NiCuZn with large magnetic field-resistant property and low-temperature sintering property and a preparation method thereof. An expression formula of a molecule structure of the ferrite material NiCuZn is Ni0.27Zn0.5Cu0.18Co0.05Fe1.95O4. On the basisof the formula of the ferrite material NiCuZn, the pre-firing materials of 1wt% of Bi2O3 (bismuth trioxide) and 2.5 to 3.5wt% of Zn2SiO4 (zinc silicate) are combined and doped. The studied material can be sintered at low temperature of 900 DEG C, and the initial magnetic conductivity mu i is 65.3 to 70.4; the large magnetic field-resistant property H70% is 1140 to 965A/m, the quality factor at the frequency range of 6MHz to 18MHz exceeds 100, the highest quality factor exceeds 130, and the comprehensive magnetic property is very excellent. The ferrite material NiCuZn has the advantages that the comprehensive requirements of higher initial magnetic conductivity, large magnetic field-resistant property and high quality factor of the ferrite material with low-temperature sintering property are well met, the cost of the production raw materials is low, the technology is simple, the operation is convenient, and the cost is low; the ferrite material NiCuZn can be widely applied into laminated sheet type power inductors, magnetic beads, transformers and other magnetic integration modules.

Description

technical field [0001] The invention belongs to the technical field of electronic ceramic materials and preparation thereof, and in particular relates to a low-temperature sintered NiCuZn ferrite material resistant to large magnetic fields and a preparation method thereof. Background technique [0002] The continuous development of miniaturization and integration of modern electronic products requires that various electronic components must also be continuously miniaturized and chipped. However, as the volume and quality of electronic components continue to shrink, the power they can carry will also drop significantly. With the continuous improvement of the degree of miniaturization and integration of electronic products, there will be higher and higher requirements for the carrying power density of chip components. How to realize the miniaturization of electronic components while also improving their load capacity Power density has been a hot issue in the field of electron...

AI Technical Summary

Problems solved by technology

However, on the one hand, in this method, two different ceramics appear in the chip inductor, and it is necessary to solve the problem of co-firing matching of different ceramics in the process, and the process complexity increases.

On the other hand, the effective magnetic permeability of the magnetic core will decrease significantly, so when obtaining the same inductance, it is necessary to increase the number of laminated layers, resultin

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