Edge hydroxylation modification method for hexagonal layered boron nitride

A technology of boron nitride and hydroxylation, which is applied in the field of edge hydroxylation modification of hexagonal layered boron nitride, can solve the problems of high thermal conductivity, affecting the mean free path of phonons, and unfavorable thermal conductivity, etc., and achieves simple operation process , weaken the tendency of secondary agglomeration into large particles, and reduce the effect of interface thermal resistance

Active Publication Date: 2018-09-21
SICHUAN UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Because the thermal conductivity of BNNS is anisotropic, it has a very high thermal conductivity along the horizontal direction. Once the hexagonal crystal structure in the horizontal direction is destroyed, it will greatly affect the mean free path of phonons in the hexagonal boron nitride surface. thus have a very adverse effect on its thermal conductivity

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  • Edge hydroxylation modification method for hexagonal layered boron nitride
  • Edge hydroxylation modification method for hexagonal layered boron nitride
  • Edge hydroxylation modification method for hexagonal layered boron nitride

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Embodiment approach

[0027] (1) Edge hydroxylation modification of hexagonal layered boron nitride: add urea and deionized water to hexagonal layered boron nitride, and then ball mill at room temperature for 2 to 12 hours to obtain completely hydroxylated modified hexagonal layered nitrogen Boron oxide; wherein, the dosage ratio of hexagonal layered boron nitride, urea and deionized water is 500-20000mg: 30-60g: 12-24mL;

[0028] (2) post-treatment: the modified hexagonal layered boron nitride obtained in step (1) is diluted with deionized water, and the diluted boron nitride solution is repeatedly diluted-ultrasonic dispersion-centrifugal treatment at room temperature, Remove excess urea and impurities; then take off the lower layer and precipitate and dry to obtain hexagonal layered boron nitride modified by edge hydroxylation.

[0029] Below in conjunction with specific embodiment, further illustrate the present invention. It should be understood that these examples are only used to illustrate...

Embodiment 1

[0031] Hexagonal layered boron nitride (EOH-BNNS) modified by edge hydroxylation was prepared by the following steps:

[0032] Step 1: Edge hydroxylation modification of BNNS:

[0033] Add 30g of urea and 12mL of deionized water to 500mg of BNNS powder, and then use a planetary ball mill at room temperature for 2 hours, specifically, every 30 minutes of ball milling with an interval of 10 minutes, and a total of 2 hours of ball milling;

[0034] Step 2: Repeated washing with deionized water to remove excess urea and impurities:

[0035] Dilute the product obtained in step (1) with 1000mL of deionized water, disperse the diluted boron nitride solution at room temperature and at an ultrasonic power of 100W for 30min, and then centrifuge. For 15min, after centrifugation, remove the part of the precipitate;

[0036] Step 3: Wash and dry EOH-BNNS:

[0037] Dilute the product obtained by centrifugation with 1000 mL of deionized water again, ultrasonically disperse evenly for 30 m...

Embodiment 2

[0040] The EOH-BNNS modified by edge hydroxylation was prepared by the following steps:

[0041] Step 1: Edge hydroxylation modification of hexagonal layered boron nitride:

[0042]Add 45 g of urea and 18 mL of deionized water to 750 mg of hexagonal boron nitride powder, and then use a planetary ball mill at room temperature for 12 hours. Specifically, every 30 minutes of ball milling is performed at intervals of 10 minutes, for a total of 12 hours of ball milling.

[0043] Step 2: Repeated washing with deionized water to remove excess urea and impurities:

[0044] Dilute the product obtained in step (1) with 1000mL of deionized water, disperse the diluted boron nitride solution at room temperature and at an ultrasonic power of 100W for 30min, and then centrifuge. After 15 minutes, the lower part of the centrifugation ends.

[0045] Step 3: Wash and dry EOH-BNNS:

[0046] Dilute the product obtained by centrifugation with 1000 mL of deionized water again, ultrasonically dis...

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Abstract

The invention belongs to the field of modification of boron nitride and relates to an edge hydroxylation modification method for hexagonal layered boron nitride. According to the edge hydroxylation modification method for the hexagonal layered boron nitride provided by the invention, the modification method comprises the following steps: adding urea and deionized water into hexagonal layered boronnitride to obtain a mixture; ball-milling at a room temperature until the mixture is uniformly dispersed, and enabling the hexagonal layered boron nitride to be completely hydroxylated; finally, removing the residual urea and impurities, and drying, thereby obtaining the edge hydroxylation modified hexagonal layered boron nitride, wherein a usage ratio of the hexagonal boron nitride to urea to deionized water is (500-20000 mg):(30-60 g):(12-24 mL). According to the method disclosed by the invention, the edge hydroxylation modified hexagonal layered boron nitride can be obtained, and the method is environmentally friendly, simple in preparation process, low in equipment requirements and applicable to expanded industrial production.

Description

Technical field: [0001] The invention belongs to the field of modification of boron nitride, and in particular relates to an edge hydroxylation modification method of hexagonal layered boron nitride. Background technique: [0002] In recent years, the discovery of two-dimensional layered nanomaterials has attracted widespread attention in the scientific research community. Due to its special layered structure, two-dimensional layered nanomaterials have many unique physical and chemical properties, which further provide them with many potential functional applications. The research from graphite to graphene structure and its application is a typical case. Boron nitride has a variety of different morphological structures, and the hexagonal boron nitride (h-BN) is very similar to graphite in crystal structure. They are all stacked by multi-layer two-dimensional structures, and can be further exfoliated into hexagonal nitrogen Boron Nitride Nanosheets (BNNS). BNNS has many ex...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C08K9/04C08K3/38
CPCC08K3/38C08K9/04C08K2003/385C08K2201/011
Inventor 傅强吴凯喻璐萍陈枫
Owner SICHUAN UNIV
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