A graphene film electrode and its preparation method, a graphene composite film interdigitated electrode with conductive lines on its surface, and a capacitor
A graphene film and film electrode technology, which can be used in hybrid capacitor electrodes, hybrid capacitor current collectors, multiple hybrid/electric double layer capacitors, etc. It can be used for industrial promotion and application, improving energy density and easy integration.
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preparation example Construction
[0092] The present invention also provides a kind of preparation method of graphene film electrode, comprises the following steps:
[0093] a) Composite a single-layer graphene sheet grown on a metal substrate on a flexible substrate, and remove the metal substrate by an etching solution to obtain an intermediate product;
[0094] b) transferring the single-layer graphene sheet on the intermediate product obtained in the above steps to the electrode substrate to obtain an electrode substrate composited with a graphene film;
[0095] Said transfer includes a single transfer or multiple transfers;
[0096] c) Depositing a metal film on the graphene film of the electrode substrate compounded with the graphene film obtained in the above steps to obtain a graphene film electrode.
[0097] The selection, combination and preferred range of materials in the preparation method of the graphene thin film electrode in the present invention preferably correspond to the selection, combinat...
Embodiment 1
[0128] a) High-quality graphene was prepared by growing high-quality graphene on copper foil (thickness 20 μm, area the size of a standard A4 paper) by chemical vapor deposition, the growth temperature was 1000 °C, the growth time was 10 min, CH 4 Gas flow rate is 10sccm, hydrogen 10sccm;
[0129] b) The graphene-grown copper foil is tightly attached to the PET substrate (Cu / PET) by rolling, and the Cu / PET film is placed in 0.5M (NH 4 )S 2 o 8 In the etching solution, the etching time is 2 to 4 hours to completely etch Cu;
[0130] c) Bond the resulting flexible PET / graphene substrate to the supercapacitor PET substrate (125 μm), or to the PTFE film substrate, and after keeping it at 90°C for 20 minutes, slowly peel off the PET substrate to achieve graphene orientation PET substrate / PTFE substrate transfer;
[0131] d) Repeat step c) 3 times to obtain a 3-layer graphene film conductive film electrode, the size of which is the size of a standard A4 paper.
Embodiment 2
[0133] a) High-quality graphene was grown on copper foil (thickness 20 μm, area the size of a standard A4 paper) by chemical vapor deposition, the growth temperature was 1030 ° C, and the growth time was 20 min; CH 4 The gas flow rate is 3 sccm, and the hydrogen gas is 10 sccm;
[0134] b) The graphene-grown copper foil is tightly attached to the PET substrate (Cu / PET) by rolling, and the Cu / PET film is placed in 0.5M FeCl 3 In the etching solution, the etching time is 1 to 2 hours to completely etch Cu;
[0135] c) cutting the resulting flexible PET / graphene substrate into a size of 25 cm 2 A small piece; and bonded to the supercapacitor PET substrate (50 μm), after maintaining at 100 ° C for 20 minutes, slowly peel off the PET substrate, so as to realize the transfer of graphene to the PET substrate;
[0136] d) Repeat step c) 6 times to obtain a 6-layer graphene film conductive film electrode with a size of 25cm 2 .
[0137] see figure 2 , figure 2 It is the physica...
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Abstract
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