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High performance quantum dot intermediate band graphene Schottky junction solar cell and its preparation

A Schottky junction and solar cell technology, applied in the field of solar cells, can solve the problem of limiting the photoelectric conversion efficiency of GaAs-based Schottky junction solar cells, and achieve the enhancement of cell photoelectric conversion efficiency, obvious effect, wide spectrum and efficient absorption. Effect

Active Publication Date: 2020-04-07
SOUTH CHINA UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, although GaAs has a direct bandgap, it can only absorb photons with energy higher than the bandgap (880nm), and photons with energy lower than the bandgap cannot be effectively absorbed by the cell, which greatly limits the GaAs-based Schottky junction solar cell. Photoelectric conversion efficiency of the battery

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  • High performance quantum dot intermediate band graphene Schottky junction solar cell and its preparation
  • High performance quantum dot intermediate band graphene Schottky junction solar cell and its preparation
  • High performance quantum dot intermediate band graphene Schottky junction solar cell and its preparation

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Embodiment 1

[0034] The graphene Schottky junction solar cell comprising the quantum dot intermediate band of the present embodiment includes a bottom electrode Au, a GaAs substrate, a GaAs layer of surface reconstruction, a GaAs buffer layer, InAs quantum dots, and a GaAs cover from bottom to top. layer, the second layer of InAs quantum dots, the second layer of GaAs capping layer, the third layer of InAs quantum dots, the third layer of GaAs capping layer, the fourth layer of InAs quantum dots, the fourth layer of GaAs capping layer, the fifth layer of InAs quantum dots , the fifth layer of GaAs capping layer, graphene film, top electrode.

[0035] The preparation method of the graphene Schottky junction solar cell comprising the quantum dot intermediate band of the present embodiment comprises the following steps:

[0036] (1) Bottom electrode growth: Paste the 2-inch n-type GaAs wafer substrate on the disk, and protect the GaAs wafer with tape around it. One is to fix the n-type wafer ...

Embodiment 2

[0046] The graphene Schottky junction solar cell comprising the quantum dot intermediate band of the present embodiment includes a bottom electrode Au, a GaAs substrate, a GaAs layer of surface reconstruction, a GaAs buffer layer, InAs quantum dots, and a GaAs cover from bottom to top. Layer, second layer of InAs quantum dots, second layer of GaAs capping layer, third layer of InAs quantum dots, third layer of GaAs capping layer, graphene film, top electrode.

[0047] The preparation method of the graphene Schottky junction solar cell comprising the quantum dot intermediate band of the present embodiment comprises the following steps:

[0048] (1) Bottom electrode growth: Paste the 2-inch n-type GaAs wafer substrate on the disk, and protect the GaAs wafer with tape around it. One is to fix the n-type wafer substrate on the disk, and the other is to prevent the electrode from being plated on the disk. The edge of the electrode is then put into the electron beam evaporation syst...

Embodiment 3

[0057] The graphene Schottky junction solar cell comprising the quantum dot intermediate band of the present embodiment includes a bottom electrode Au, a GaAs substrate, a GaAs layer of surface reconstruction, a GaAs buffer layer, InAs quantum dots, and a GaAs cover from bottom to top. layer, the second layer of InAs quantum dots, the second layer of GaAs capping layer, graphene film, top electrode.

[0058] The preparation method of the graphene Schottky junction solar cell comprising the quantum dot intermediate band of the present embodiment comprises the following steps:

[0059] (1) Bottom electrode growth: Fix the 2-inch n-type GaAs wafer substrate on the disk, and protect the GaAs wafer with tape around it (one is to fix the n-type wafer substrate on the disk, and the other is to prevent the electrode from being plated on the disk. edge), and then placed into the electron beam evaporation system, a layer of gold electrode is plated, and the thickness of the Au electrode...

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Abstract

The invention belongs to the technical field of solar cells, and discloses a high-performance quantum dot intermediate band graphene Schottky junction solar cell and its preparation. The graphene Schottky junction solar cell comprises a bottom electrode, a GaAs substrate, a GaAs layer of surface reconstruction, a GaAs buffer layer, a quantum dot intermediate band, a graphene layer, and a top electrode from bottom to top; the quantum dot The middle zone is formed by alternate superposition of GaAs capping layer and InAs quantum dot layer, the GaAs buffer layer is InAs quantum dot layer, and the number of layers of GaAs capping layer and InAs quantum dot layer is the same. The invention introduces the quantum dot intermediate band into the graphene Schottky junction solar cell, effectively widens the solar spectrum absorption range of the cell, significantly increases the photogenerated current, and realizes high photoelectric conversion efficiency of the solar cell.

Description

technical field [0001] The invention belongs to the technical field of solar cells, and in particular relates to a graphene Schottky junction solar cell with high photoelectric conversion efficiency and a quantum dot intermediate band and a preparation method thereof. Background technique [0002] As a device that directly uses sunlight for energy conversion, solar cells can convert solar energy into electrical energy. Solar cells are a kind of clean energy, which is the way we mainly use solar energy. However, in order to improve the photoelectric conversion efficiency of solar cells to solar energy, efficient absorption of the solar spectrum by solar cells must be achieved. Graphene Schottky junction solar cells have become a new type of Schottky junction photovoltaic device that has developed rapidly in recent years because of their high photoelectric conversion efficiency and low process cost. People usually use GaAs to form Schottky contacts with graphene. The Schottky...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/42H01L51/46
CPCH10K85/00H10K30/00H10K30/65Y02E10/549Y02P70/50
Inventor 张曙光李国强温雷徐珍珠高芳亮
Owner SOUTH CHINA UNIV OF TECH