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A kind of semiconductor device and its preparation method, electronic device

A technology of electronic devices and semiconductors, applied in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., can solve problems such as poor performance and time-related dielectric breakdown

Active Publication Date: 2021-06-04
SEMICON MFG NORTH CHINA (BEIJING) CORP +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Wherein, the interconnection structure is formed in a dielectric layer, such as an ultra-low-K dielectric layer (Ultra low-k, ULK). The ULK has a K value around 2.5 due to its porous properties, which can improve the performance of the device. The delay performance of contact resistance is therefore widely used, but most of the devices prepared by the current method have the problem of poor time-dependent dielectric breakdown (timedependent dielectric breakdown, TDDB) performance

Method used

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  • A kind of semiconductor device and its preparation method, electronic device
  • A kind of semiconductor device and its preparation method, electronic device
  • A kind of semiconductor device and its preparation method, electronic device

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Experimental program
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Embodiment 1

[0052] The preparation method of the semiconductor device of the present invention is described in detail below with reference to the accompanying drawings, figure 1 Shows a flow chart of the fabrication process of the semiconductor device of the present invention; Figures 2A-2D A schematic cross-sectional view of a structure obtained by implementing the method for manufacturing a semiconductor device according to an embodiment of the present invention is shown.

[0053] The invention provides a method for preparing a semiconductor device, such as figure 1 As shown, the main steps of the preparation method include:

[0054] Step S1: providing a substrate on which an ultra-low-K dielectric layer and an interconnection structure embedded in the ultra-low-K dielectric layer and exposing the top surface are formed;

[0055] Step S2: forming a covering layer on the ultra-low-K dielectric layer and the interconnection structure to cover the ultra-low-K dielectric layer and the in...

Embodiment 2

[0100] The present invention also provides a semiconductor device, the semiconductor device comprising:

[0101] base;

[0102] an ultra-low-k dielectric layer on the substrate;

[0103] an interconnection structure embedded in the ultra-low-k dielectric layer and the top surface of the ultra-low-k dielectric layer is flush with the top surface of the top metal layer in the interconnection structure;

[0104] a capping layer on the ultra-low-k dielectric layer and the interconnect structure;

[0105] Wherein, the interconnection structure and the cover layer are obtained through thermal curing treatment, so as to eliminate the stress in the interconnection structure and the cover layer.

[0106] The covering layer includes a first layer and a second layer, both of which are obtained through thermal curing treatment.

[0107] Specifically, the substrate may be at least one of the materials mentioned below: silicon, silicon-on-insulator (SOI), silicon-on-insulator (SSOI), sil...

Embodiment 3

[0127] The present invention also provides an electronic device, including the semiconductor device described in Embodiment 2, and the semiconductor device is prepared according to the method described in Embodiment 1.

[0128] The electronic device of this embodiment can be any electronic device such as a mobile phone, a tablet computer, a notebook computer, a netbook, a game console, a TV set, a VCD, a DVD, a navigator, a digital photo frame, a camera, a video camera, a recording pen, MP3, MP4, PSP, etc. Product or equipment, but also any intermediate product including electrical circuits. The electronic device according to the embodiment of the present invention has better performance due to the use of the above-mentioned semiconductor device.

[0129] in, image 3 An example of a mobile phone handset is shown. The mobile phone handset 300 is provided with a display portion 302 included in a casing 301, operation buttons 303, an external connection port 304, a speaker 305...

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Abstract

The invention provides a semiconductor device, a preparation method thereof, and an electronic device. The method includes: providing a substrate on which an ultra-low-K dielectric layer and an interconnect structure embedded in the ultra-low-K dielectric layer and exposing a top surface are formed; forming a cover layer on the layer and the interconnection structure to cover the ultra-low-k dielectric layer and the interconnection structure; and performing a thermal curing step to relieve stress in the interconnection structure. The invention can improve the time-dependent dielectric breakdown (time dependent dielectric breakdown, TDDB) performance of the device through thermal curing treatment, and further improve the performance and yield of the device.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a semiconductor device, a preparation method thereof, and an electronic device. Background technique [0002] With the continuous development of integrated circuit technology, more devices will be integrated on the chip, and the chip will adopt faster speed. Driven by these requirements, the geometric size of devices will continue to shrink, and new materials, new technologies and new manufacturing processes will be continuously used in the chip manufacturing process. [0003] Wire bonding technology in the back end of line (BEOL) is a widely used method for connecting a semiconductor die with a circuit to pins on an original package. In the back end of the line (BEOL), there are many layers, and the metal stack connected to the active or passive device on the substrate in the pad structure includes several metal layers and via holes between adjacent metal layers, where a...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/768
CPCH01L21/768H01L21/76829H01L21/76838
Inventor 李凤莲倪景华
Owner SEMICON MFG NORTH CHINA (BEIJING) CORP