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Method for homogenous epitaxial growth of aluminum nitride single crystals

A homoepitaxial, aluminum nitride technology, applied in chemical instruments and methods, single crystal growth, crystal growth, etc., can solve the problems of poor growth crystal quality, seed crystal pollution, etc., to improve crystal quality and suppress secondary formation Effects of nuclei, mass transfer rates, and crystal growth rates

Inactive Publication Date: 2018-10-09
SUZHOU AOQU OPTOELECTRONICS TECH CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The purpose of the present invention is to provide a method for homoepitaxial growth of aluminum nitride single crystal, which can effectively avoid seed crystal pollution and poor quality of grown crystals caused by aluminum nitride seed crystal bonding during the homoepitaxial growth process of aluminum nitride and other problems, it is possible to prepare high-quality and large-sized aluminum nitride single crystals

Method used

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Embodiment Construction

[0020] The technical solutions of the present invention will be further described below in conjunction with the embodiments.

[0021] The above-mentioned method for homoepitaxial growth of aluminum nitride single crystal comprises the following steps:

[0022] (1) Put the aluminum nitride seed crystal into the bottom of the crucible, and put the aluminum nitride raw material in the middle and upper part of the crucible (it can be fixed by wire mesh or other fixed methods), and the area where the aluminum nitride seed crystal is located is for growth The area where the aluminum nitride raw material is located is the raw material area, and the raw material area is located above the growth area. Put the crucible into the furnace body, after washing the furnace, vacuumize the furnace body, then pass high-purity nitrogen gas into the furnace body, keep the nitrogen pressure in the furnace body at 60-100Kpa, the temperature of the raw material area is T1, and the growth area The te...

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Abstract

The invention discloses a method for homogenous epitaxial growth of aluminum nitride single crystals. According to the method, aluminum nitride seed crystals for growing the aluminum nitride single crystals are directly placed at the bottom of a crucible, an aluminum nitride raw material is placed at the middle upper part of the crucible, and a raw material area and a growth area are inverted, sothat the defects such as bubbles of a bonding layer and surface contamination of the seed crystals, which caused by the traditional seed crystal bonding process, are avoided. In the temperature rise period, the temperature of the growth area is controlled to be higher than that of the raw material area, namely, T2 is larger than T1, and short-time heat preservation is performed, so that the surface contamination and damage layers of the seed crystals are further removed; in the crystal growth stage, a low pressure and a specific temperature difference are maintained, and T1 is enabled to be larger than T2, so that higher mass transfer rate and crystal growth rate are guaranteed; in the cooling stage, the temperature of the growth area is controlled to be higher than that of the raw material area again, namely, T2 is larger than T1, so that the secondary nucleation in the later stage is effectively inhibited, and the crystal growth quality is improved.

Description

technical field [0001] The invention relates to a method for homoepitaxial growth of aluminum nitride single crystal. Background technique [0002] Aluminum nitride (AlN) crystal, as a typical material of the third-generation semiconductor, has wide band gap, high resistivity, high thermal conductivity, and high electron drift rate, as well as good UV transmittance and high breakdown field strength. . It is an ideal material for manufacturing high-temperature, high-frequency, radiation-resistant and high-power devices. In addition, AlN crystal is also the best substrate material for epitaxial growth of Group III nitrides such as GaN and AlGaN. Compared with common SiC substrates and sapphire substrates, the lattice mismatch and thermal mismatch between AlN and GaN are relatively smaller. . At present, the preparation methods of AlN crystal mainly include physical vapor transport (PVT), hydride vapor phase epitaxy (HVPE), metal organic compound vapor deposition (MOCVD) and...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B23/00C30B29/40
CPCC30B23/00C30B29/403
Inventor 吴亮贺广东黄嘉丽雷丹王智昊王琦琨龚加玮黄毅
Owner SUZHOU AOQU OPTOELECTRONICS TECH CO LTD