Method for reducing hidden cracking of back electrode region of MWT (Metal Wrap Technology) battery
A backside electrode and battery technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of rising fragmentation rate at the component end, and achieve the effect of reducing fragmentation rate, reducing coverage area, and reducing hidden cracks
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[0027] The method for reducing the hidden cracks in the electrode area on the back of the MWT battery comprises the following steps:
[0028] (1) Silicon wafer: use solar-grade P-type single crystal or polycrystalline silicon wafer as the substrate;
[0029] (2) Laser drilling: laser drilling on silicon wafers, the holes are an N×N array, and the shape of the holes is a circle center, square or cone, etc.; a better choice, the diameter of the laser drilling is 100-400μm ;
[0030] (3) Texturing: use conventional chemical cleaning and texturing methods to make texturing to form a light trap surface;
[0031] (4) Diffusion: use POCl3 diffusion source on the suede surface for high-temperature single-sided diffusion to form a PN junction;
[0032] (5) Mask: On the back surface of the silicon wafer (with the punched hole as the center), prepare a diameter of 1-10mm (for example, a diameter of 1, 2, 4, 8, 10mm), and a thickness of 1-50μm (for example, a thickness of 25μm) A circu...
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