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Dual Pulse Width Mode-Locked Laser

A mode-locked laser, dual pulse width technology, applied in lasers, laser parts, phonon exciters, etc., can solve the problems of inaccurate measurement, complex joint modulation technology, weak spectral lines, etc., to avoid complexity , Avoid different beam quality, and promote the effect of replacement

Active Publication Date: 2020-03-17
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Although LIBS technology has many unique advantages and has broad application prospects, LIBS technology has its limitations: the element detection limit of LIBS technology is high, resulting in poor detection sensitivity; especially for elements with low content, the spectrum The spectral lines are often relatively weak, which makes it difficult to distinguish the spectral lines, and it is easy to cause inaccurate or even wrong measurements
However, the patent uses the joint modulation of the intracavity Pockels cell and the extracavity Pockels cell, and this joint modulation technique is complex

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  • Dual Pulse Width Mode-Locked Laser
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  • Dual Pulse Width Mode-Locked Laser

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Embodiment Construction

[0022] see figure 1 As shown, the present invention provides a dual pulse width mode-locked laser, comprising:

[0023] A pump source 1 is a pump source with a wavelength of 880nm. The pump light is continuous light with a spectral width of 2nm. The pump source is cooled by deionized water with a water temperature of 18 degrees.

[0024] An energy transmission fiber 2, one end of which is connected to the output end of the pump source 1; the pump light of the pump source 1 is coupled out through the energy transmission fiber 2, the diameter of the energy transmission fiber 2 is 100-600 μm, and the numerical aperture is The NA is 0.22, and the pump light generated by the pump source 1 is coupled through the energy-transmitting optical fiber 2 to output power of 10-20W.

[0025] A pump light shaping system 3, one end of which is located on the optical path of the energy-transmitting optical fiber 2; The spot size of the pump light reaching the crystal 4 is about 200 μm-1400 μm...

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Abstract

A dual-pulse-width mode-locked laser comprises a pumping source, an energy-transmitting optical fiber, a pumping light shaping system, a laser crystal, a half slide, a thin-film polarizing film, a coupling output mirror, a dual-color plane mirror, a first concave reflector, a second concave reflector, a semiconductor saturable absorber mirror, an etalon and a second coupling output mirror, whereinone end of the energy-transmitting optical fiber is connected with the output end of the pumping source; one end of the pumping light shaping system is located on the light path of the energy-transmitting optical fiber; the laser crystal, the half slide, the thin-film polarizing film and the coupling output mirror are all located on the light path of the pumping light shaping system; the dual-color plane mirror is located between the pumping light shaping system and the laser crystal; the first concave reflector is positioned on a reflecting light path of the dual-color plane mirror; the second concave reflector is positioned on the light path of the first concave reflector; the semiconductor saturable absorber mirror is located on a reflecting light path of the second concave reflector;and the etalon and the second coupling output mirror are sequentially arranged on a reflecting light path of the thin-film polarizing film. In the same laser, no external modulator element is needed,and pulse sequences with two pulse widths are obtained only through a semiconductor saturable absorber mirror passive mode locking technology.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, in particular to a dual-pulse width mode-locked laser. Background technique [0002] Laser-induced plasma spectroscopy (LIPS for short), also known as laser-induced breakdown spectroscopy (LIBS for short), focuses a high-energy pulsed laser beam on the surface of a sample to generate a burnt The eclipse and associated high-temperature plasma with high brightness, through the collection of plasma radiated light and analysis of its atomic, ion and molecular spectral lines, and then deduce the composition and content of each element in the tested sample. LIBS has the advantages of small size, low cost, simple sample preparation process, no need for vacuum, fast detection process, suitable for all-element analysis, real-time analysis results, and long-distance telemetry. Therefore, since the concept of laser-induced breakdown spectroscopy first appeared in 1963, it has developed rapidly with ...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S3/11H01S3/08
CPCH01S3/08H01S3/1115
Inventor 于海娟林学春何超建邹淑珍赵鹏飞刘燕楠齐瑶瑶
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI