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A kind of metal thermal interface material and preparation method thereof

A technology of interface material and metal heat, applied in the direction of semiconductor/solid-state device parts, semiconductor devices, electrical components, etc., can solve the problems of unsatisfactory heat dissipation effect, high-temperature flow overflow of low-melting point alloys, etc., and achieve good wettability and thermal conductivity. high rate effect

Active Publication Date: 2019-09-24
BEIJING DREAM INK TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In view of this, an object of the present invention is to propose a metal thermal interface material to make up for the problems in the prior art that the heat dissipation effect of the thermal interface material is not ideal, and the high-temperature flow of low-melting point alloy overflows

Method used

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preparation example Construction

[0023] The invention discloses a method for preparing a metal thermal interface material, comprising: uniformly mixing a first melting point metal and a second melting point metal; Alloy reaction to generate new alloy reactants; after mixing, a metal mixture with the first melting point metal, the second melting point metal, and the alloy reactant is obtained as a metal thermal interface material; will be prepared The metal thermal interface material is stored frozen; the metal thermal interface material automatically transforms into a second state through the first state at room temperature, and the melting point of the second state is higher than the melting point of the first state .

[0024] From the perspective of the alloy reaction mechanism, the metal thermal interface material is a mixture, because it contains the first melting point metal, the second melting point metal and the alloy reactant at the same time, and the alloy reactant can induce the remaining first melt...

Embodiment 1

[0041] In the metal thermal interface material of this embodiment, the low melting point alloy is gallium indium alloy, and the mass fractions of the alloy components are: Ga78.5%, In21.5%). The metal powder is nickel powder, the mass fraction is 20% of the total mass of the metal thermal interface material, and the particle size is 10-35 μm.

[0042] The gallium-indium alloy and nickel powder were simply mixed, put into a ball mill jar, and ball milled at a speed of 500 rpm in an atmospheric environment, and mixed evenly in 90 minutes.

[0043] The metal thermal interface material obtained is in a liquid state with a certain viscosity. It is taken out from the ball mill jar, quickly placed in a container at ambient atmospheric pressure, and stored in a freezer at -25°C.

Embodiment 2

[0045] In the metal thermal interface material of this embodiment, the low melting point alloy is gallium indium alloy, and the mass fraction of each component of the alloy is: Ga84%, In16%). The metal powder is nickel powder and iron powder. The mass fraction of nickel powder is 15% of the total mass of the metal thermal interface material, and the particle size is 30 μm. The mass fraction of iron powder is 8% of the total mass of the room temperature self-curing metal thermal interface material. The diameter is 20 μm.

[0046] Simply mix the gallium-indium alloy with nickel powder and iron powder, put it into a vertical kneader, and carry out vertical kneading at a speed of 48 revolutions per minute at 150-200 degrees Celsius in an atmospheric environment, and mix well for 90 minutes.

[0047] The metal thermal interface material obtained was in the form of a paste, which was taken out from the vertical kneader, quickly placed in a container with ambient atmospheric pressure...

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Abstract

The invention provides a metal hot interface material and a preparation method thereof. The preparation method comprises the following steps of mixing first melting point metal and second melting point metal for a period time according to a certain proportion; in the mixing process, enabling the first melting point metal and the second melting point metal to take alloy reaction to obtain a finished product; performing freeze storage in argon inflation or vacuum environment. The metal hot interface material can moisturize a solid interface and can fill gaps of the contact interface to reduce the contact heat resistance; the pollution generated by flowing overflow on electronic devices or even short circuit can be avoided.

Description

technical field [0001] The invention belongs to the field of metal materials, in particular to a metal thermal interface material and a preparation method thereof. Background technique [0002] High temperature will have a harmful effect on the stability, reliability and life of electronic components. For example, excessive temperature will endanger the junction of semiconductors, damage the connection interface of the circuit, increase the resistance of the conductor and cause mechanical stress damage. Therefore, ensuring that the heat generated by the heating electronic components can be discharged in time has become an important aspect of the system assembly of microelectronic products. There are extremely fine uneven gaps between the surface of the microelectronic material and the heat sink. If they are directly installed and combined, their actual contact area is only 10% of the area of ​​the heat sink base, and the rest are air gaps. Because the thermal conductivity o...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/373
CPCH01L23/3736
Inventor 曹宇郑翰朱唐于洋
Owner BEIJING DREAM INK TECH CO LTD
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