Semiconductor nanocrystal and preparation method thereof

A nanocrystal and semiconductor technology, applied in nanotechnology, nano optics, nanotechnology, etc., can solve the problems of quantum dots with many steps, increase energy consumption, and affect the progress of industrialization, so as to simplify the preparation steps, reduce self-absorption, The effect of promoting progress

Active Publication Date: 2018-11-16
宁波纳鼎新材料科技有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In the principle of quantum dot luminescence, quantum dots can never get rid of the defect of small Stokes shift
In this way, part of the excitation light is self-absorbed by the quantum dots, thereby improving energy consumption.
Moreover, most quantum dot synthesis methods have many steps and are cumbersome, which seriously affects the progress of industrialization.

Method used

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  • Semiconductor nanocrystal and preparation method thereof
  • Semiconductor nanocrystal and preparation method thereof
  • Semiconductor nanocrystal and preparation method thereof

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preparation example Construction

[0022] A method for preparing semiconductor nanocrystals provided by an embodiment of the present invention comprises the following steps:

[0023] providing a cationic precursor solution comprising at least a first cationic precursor and a second cationic precursor;

[0024] providing an anion precursor solution comprising at least an anion precursor;

[0025] Mixing and reacting the cation precursor solution with the anion precursor solution to obtain semiconductor nanocrystals;

[0026] The structural formula of the anion precursor is (NR 1 R 2 ) 3 P=E, E includes S, Se or Te, R 1 Including hydrogen, alkyl chains with 1 to 10 carbon atoms, alkane chains with 1 to 10 carbon atoms, olefin chains with 1 to 10 carbon atoms, and 1 to 10 carbon atoms with substituents Any one or a combination of two or more of olefin chains and aromatic chains with 5 to 18 carbon atoms, R 2 Including hydrogen, alkyl chains with 1 to 10 carbon atoms, alkane chains with 1 to 10 carbon atoms, ...

Embodiment 1

[0069] Preparation of In-Zn-P-S Semiconductor Nanocrystals with Composite Structure

[0070] 1. The temperature of the In-Zn precursor is raised to 200°C under a nitrogen atmosphere;

[0071] 2. Add 0.5ml S-P(EDA) 3 solution, reacted for 30 minutes to prepare In-Zn-P-S nanocrystals.

[0072] Samples were tested for their ultraviolet-visible absorption (UV-Vis) and fluorescence emission (PL) spectra.

[0073] Its absorption peak is 460nm, its fluorescence emission peak is 530nm, its half-width is 38nm, and its quantum yield is 80% when tested with an integrating sphere. Its Stokes shift is 70nm.

Embodiment 2

[0075] Preparation of Cd-Zn-P-Se Semiconductor Nanocrystals with Composite Structure

[0076] 1. The temperature of the Cd-Zn precursor is raised to 200°C under nitrogen atmosphere;

[0077] 2. Add 0.5ml Se-P(EDA) 3 solution, and reacted for 30 minutes to prepare Cd-Zn-P-Se nanocrystals.

[0078] 3 Heat up to 300°C, add 1ml of dodecanethiol (DDT), and react for 20in

[0079] Samples were tested for their ultraviolet-visible absorption (UV-Vis) and fluorescence emission (PL) spectra.

[0080] It has an absorption peak of 575nm, a fluorescence emission peak of 620nm, a half-maximum width of 21nm, and a quantum yield of 85% when tested using an integrating sphere. Its Stokes shift is 45nm.

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Abstract

The invention discloses a preparation method of a semiconductor nanocrystal, which includes steps of: providing a cation precursor solution at least comprising a first cation precursor and a second cation precursor; providing an anion precursor solution at least comprising an anion precursor; mixing the cation precursor solution and the anion precursor solution to carry out a reaction to prepare the semiconductor nanocrystal. The method, compared with the prior art, avoids the defect of small Stokes shift and effectively increases efficiency and reduces energy consumption of the semiconductornanocrystal. The method simplifies preparation steps, wherein the target semiconductor nanocrystal can be prepared just through a single step with one-time feeding, thus promoting industrial development.

Description

technical field [0001] The invention relates to the technical field of nanomaterial preparation, in particular to a semiconductor nanocrystal and a preparation method thereof. Background technique [0002] Quantum dots are semiconductor crystals composed of several atoms, which have good luminescent properties due to their quantum localization effect. Compared with other luminescent materials, it can be applied in the fields of display, lighting, biology, solar cells and the like. [0003] As the research on quantum dots gradually deepens, the performance improvement of quantum dots has been paid more and more attention. The principle of quantum dot luminescence: a beam of light is irradiated on the semiconductor material. After the semiconductor material absorbs, the electrons in the valence band jump to the conduction band, and the electrons in the conduction band jump back to the valence band to emit photons, which can also fall to the semiconductor material. in the ele...

Claims

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Application Information

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IPC IPC(8): C09K11/88B82Y20/00B82Y40/00
CPCB82Y20/00B82Y40/00C09K11/883
Inventor 张孟李霞张超
Owner 宁波纳鼎新材料科技有限公司
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