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Back surface field gasb thermal photovoltaic cell and preparation method thereof

A technology of thermal photovoltaic cells and back surface field, applied in photovoltaic power generation, circuits, electrical components, etc., can solve the problem of low conversion efficiency of thermal photovoltaic cells

Active Publication Date: 2020-05-12
江苏秦烯新材料有限公司
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  • Claims
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Problems solved by technology

The common GaSb battery is usually made by diffusion method, which is pn type, in which the front surface of the battery is p-type doped, and the structure is very simple. The GaSb single-junction thermal photovoltaic battery produced by JX Crystals in the United States has a thermal photovoltaic system efficiency of 24%, but The conversion efficiency of thermal photovoltaic cells is still low compared to other types of solar cells

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  • Back surface field gasb thermal photovoltaic cell and preparation method thereof
  • Back surface field gasb thermal photovoltaic cell and preparation method thereof
  • Back surface field gasb thermal photovoltaic cell and preparation method thereof

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Embodiment Construction

[0024] see figure 1 As shown, the present invention provides a back surface field GaSb thermal photovoltaic cell, comprising:

[0025] A substrate 3, the substrate 3 is a single wafer obtained by cutting and polishing a Te-doped n-type GaSb single crystal grown by the liquid seal Czochralski method (LEC), and the donor Te doping concentration is 5×10 16 -8×10 16 cm -3 , the crystal orientation is 2° from the (100) direction to the (110) direction, the thickness is 500 μm, and the size is 1×1cm 2 ;

[0026] An active region 4, which is made on the substrate 3, the material of the active region 4 is Zn-diffused p-type GaSb, the diffusion depth is 300-800nm, and the doping concentration is 5×10 18 -5×10 19 cm -3 ;

[0027] A back electric field layer 2, which is made on the back of the substrate 3, the material of the back electric field layer 2 is Te ion-implanted n+ type GaSb, the implantation depth is 50-75nm, and the doping concentration is 1×10 18 -1×10 19 cm -3 ; ...

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Abstract

Disclosed is back surface field GaSb thermal photovoltaic cell. The thermal photovoltaic cell comprises a substrate, a back electric field layer, a back electrode, an active region and a front electrode, wherein the back electric field layer is manufactured on the back surface of the substrate; the back electrode is manufactured on the back electric field layer; the active region is manufactured on the upper surface of the substrate; and the front electrode is manufactured in the middle of the front surface of the active region, wherein the size of the front electrode is smaller than that of the active region. According to the thermal photovoltaic cell, an nn+ junction is added on the back surface of the cell, and a high-low junction electric field is formed with the original built-in electric field, so that a hole barrier is provided, and the collection efficiency of photon-generated carriers is improved by utilizing energy band engineering; and meanwhile, due to the fact that the doping concentration near the back electrode is high, the width of the barrier region is smaller, and run through of the barrier is performed by electrons via a channel tunnel, so that better ohmic contact is formed between the GaSb and the back electrode metal, thereby improving the efficiency of the cell.

Description

technical field [0001] The invention relates to the technical field of thermal photovoltaic cells, in particular to a back surface field GaSb thermal photovoltaic cell and a preparation method thereof. Background technique [0002] Thermal photovoltaic cells are devices that convert infrared light into electrical energy by using the photovoltaic effect of a narrow-bandgap semiconductor pn junction. Its principle is similar to that of traditional solar cells. Photons with energy greater than the forbidden band width generate electron-hole pairs on both sides of the pn junction due to intrinsic absorption, that is, photogenerated minority carriers. Under the action of the built-in electric field of the pn junction, the photogenerated minority carriers move in opposite directions respectively, forming photomotive force at both ends of the pn junction. Various high-temperature heat radiators, such as gas furnaces, nuclear reactor hot steel billets, etc., can be used as light so...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0216H01L31/054H01L31/068H01L31/18
CPCH01L31/02168H01L31/054H01L31/0684H01L31/1876Y02E10/52Y02E10/547Y02P70/50
Inventor 余丁赵有文白永彪沈桂英董志远刘京明谢辉
Owner 江苏秦烯新材料有限公司
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