Light-emitting diode epitaxial wafer and manufacturing method therefor

Abstract

The invention discloses a light-emitting diode epitaxial wafer and a manufacturing method therefor, and belongs to the technical field of semiconductors. The light-emitting diode epitaxial wafer includes a substrate, a buffer layer, an undoped GaN layer, an N-type layer, an active layer and a P-type layer, wherein the buffer layer, the undoped GaN layer, the N-type layer, the active layer and theP-type layer are sequentially stacked on the substrate. The active layer includes N B<x>In<1.5x>Ga<1-2.5x>N well layers and GaN barrier layers which grow alternately in a periodic manner, wherein 0<x<1, 1<=N, the ratio of the component B to the component In in the B<x>In<1.5x>Ga<1-2.5x>N well layers is 2: 3, thereby enabling the lattice constant of the B<x>In<1.5x>Ga<1-2.5x>N well layers to be matched with the lattice constant of the GaN barrier layers, and improving the crystal quality of the active layer. Meanwhile, the thickness of each of the B<x>In<1.5x>Ga<1-2.5x>N well layers is 4-20 nm.Compared with the existing InGaN well layers with a thickness of 2 to 4 nm, the B<x>In<1.5x>Ga<1-2.5x>N well layers are thicker, which can increase the concentration of carriers in the active layer,reduce the droop effect of the LED, and improve the luminous efficiency of the LED.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a light-emitting diode epitaxial wafer and a manufacturing method thereof. Background technique [0002] LED (Light Emitting Diode, Light Emitting Diode) is a semiconductor electronic component that can emit light. As an efficient, environmentally friendly and green new solid-state lighting source, it is being rapidly and widely used, such as traffic lights, car interior and exterior lights, urban landscape lighting, mobile phone backlights, etc. [0003] The epitaxial wafer is the main component of the LED. The existing GaN-based LED epitaxial wafer includes a substrate and a buffer layer stacked on the substrate, an undoped GaN layer, an N-type layer, an active layer and a P type layer. Wherein, the active layer includes a plurality of alternately grown InGaN well layers and GaN barrier layers. [0004] In the process of realizing the present invention, the inventor f...

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Problems solved by technology

[0006] In order to solve the problem that the thinner InGaN well layer in the prior art will aggravate the droop effect of the LED and reduce the luminous efficiency of the LED, an embodiment of the present invention provides a light-emitting diode epitaxial wafer and a manufacturing method thereof

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