A bivo for photocatalytic oxygen evolution 4 -al 2 o 3 -ni 4 o 4 Composite film and preparation method thereof
A bivo4-al2o3-ni4o4, composite film technology, applied in electrodes, electrolysis components, electrolysis process, etc., can solve the problems of complex synthesis, dissociation, poor stability of photoanode, etc. , Improve stability and low cost
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Embodiment 1
[0031] (1) Preparation of BiVO 4 Seed layer: Dissolve 0.3638g of bismuth nitrate and 0.4384g of ethylenediaminetetraacetic acid in 15ml of water, add 1ml of ammonia water to adjust the pH to 10, stir until dissolved, and prepare A solution; weigh 0.0877g of ammonium metavanadate Dissolve 0.1096g of ethylenediaminetetraacetic acid in 15ml of water, add 1ml of ammonia water to adjust the pH to 10, stir until dissolved, and prepare B solution; mix A and B solutions, continue to stir and mix, and prepare the seed layer precursor , put the FTO conductive glass on the spin coater, take the seed layer precursor solution for spin coating, spin coating 3 times, and keep it at 500°C for 10 minutes after each spin coating, and finally put the spin coated FTO conductive glass on the Preparing the bismuth vanadate seed layer by incubating at 500°C for 2 hours in air atmosphere;
[0032] (2) Preparation of BiVO 4 Film: Disperse 0.1455g of bismuth nitrate and 0.1315g of ethylenediaminetetr...
Embodiment 2
[0036] (1) Preparation of BiVO 4 Seed layer: Dissolve 0.395g of bismuth nitrate and 0.438g of ethylenediaminetetraacetic acid in 15ml of water, add 1ml of ammonia water to adjust the pH to 10, stir until dissolved, and prepare A solution; weigh 0.117g of partial vanadium Dissolve ammonium chloride and 0.141g of EDTA in 15ml of water, add 1ml of ammonia water to adjust the pH to 10, stir until dissolved, and prepare B solution; mix A and B solutions, continue to stir and mix, and obtain a seed layer For the precursor solution, put the FTO conductive glass on a spin coater, take the seed layer precursor solution for spin coating, 10 drops each time, spin coating three times, and keep it at 500°C for 15 min after each spin coating, and finally The spin-coated FTO conductive glass was kept in air at 500°C for 1.5 hours to obtain a bismuth vanadate seed layer;
[0037] (2) Preparation of BiVO 4 Film: Dissolve 0.12g of bismuth nitrate and 0.132g of ethylenediaminetetraacetic acid ...
Embodiment 3
[0041] (1) Preparation of BiVO 4 Seed layer: Dissolve 0.3638g of bismuth nitrate and 0.4384g of ethylenediaminetetraacetic acid in 15ml of water, add 1ml of ammonia water to adjust the pH to 10, stir until dissolved, and prepare A solution; weigh 0.0877g of ammonium metavanadate Dissolve 0.1096g of ethylenediaminetetraacetic acid in 15ml of water, add 1ml of ammonia water to adjust the pH to 10, stir until dissolved, and prepare B solution; mix A and B solutions, continue to stir and mix, and prepare the seed layer precursor ;Put the FTO conductive glass on the spin coater, take the seed layer precursor solution for spin coating, spin coating 3 times, put it in 500°C for 10min after each spin coating, and finally put the FTO conductive glass after spin coating in the air In the atmosphere, heat preservation at 500°C for 2 hours to prepare a bismuth vanadate seed layer;
[0042] (2) Preparation of BiVO 4 Film: Disperse 0.1455g of bismuth nitrate and 0.1315g of ethylenediamine...
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