Iron-doped diamond dilute magnetic semiconductor and preparation method thereof

A technology of dilute magnetic semiconductor and diamond, applied in the field of iron-doped diamond and its preparation, can solve the problems of sensitive growth parameters, complex diamond growth conditions, etc., and achieves the effects of low deposition pressure, adjustable microwave power, and accelerated deposition

Active Publication Date: 2020-05-22
WUHAN PUDI VACUUM TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, there are currently no literature and patent reports on this type of diamond, because the growth conditions of this type of diamond are very sensitive to growth parameters, so it is difficult to obtain by conventional methods

Method used

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  • Iron-doped diamond dilute magnetic semiconductor and preparation method thereof
  • Iron-doped diamond dilute magnetic semiconductor and preparation method thereof
  • Iron-doped diamond dilute magnetic semiconductor and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] A method for preparing an iron-doped diamond dilute magnetic semiconductor, the specific steps are as follows:

[0031] 1) Substrate pretreatment: use diamond suspension to ultrasonically clean the substrate (silicon wafer) to increase the surface energy of the substrate and facilitate diamond nucleation;

[0032] 2) Preparation of precursor solution: Iron acetylacetonate was used as iron source, absolute ethanol was used as carbon source, and 0.1 g of iron acetylacetonate was dissolved in 400 ml of absolute ethanol in a conical flask to obtain a precursor solution;

[0033] 3) Device preparation: In the deposition chamber of the microwave plasma chemical vapor deposition device, place the silicon wafer at the center above the substrate stage, vacuum the chamber (to a vacuum degree of 10-100Pa), and pass through the chamber to Inject hydrogen, adjust the microwave power and the pressure in the vacuum chamber, and excite and generate plasma. The process parameters used a...

Embodiment 2

[0038] A method for preparing an iron-doped diamond dilute magnetic semiconductor, the specific steps are as follows:

[0039]1) Substrate pretreatment: use diamond suspension to ultrasonically clean the substrate (silicon wafer) to increase the surface energy of the substrate and facilitate diamond nucleation;

[0040] 2) Preparation of precursor solution: Iron acetylacetonate was used as iron source, absolute ethanol was used as carbon source, and 0.2 g of iron acetylacetonate was dissolved in 400 ml of absolute ethanol in the Erlenmeyer flask to obtain a precursor solution;

[0041] 3) Device preparation: In the deposition chamber of the microwave plasma chemical vapor deposition device, place the silicon wafer at the center above the substrate stage, vacuum the chamber (to a vacuum degree of 10-100Pa), and pass through the chamber to Inject hydrogen, adjust the microwave power and the pressure in the vacuum chamber, and excite and generate plasma. The process parameters us...

Embodiment 3

[0046] A method for preparing an iron-doped diamond dilute magnetic semiconductor, the specific steps are as follows:

[0047] 1) Substrate pretreatment: use diamond suspension to ultrasonically clean the substrate (silicon wafer) to increase the surface energy of the substrate and facilitate diamond nucleation;

[0048] 2) Preparation of precursor solution: Iron acetylacetonate was used as iron source, absolute ethanol was used as carbon source, and 0.2 g of iron acetylacetonate was dissolved in 400 ml of absolute ethanol in the Erlenmeyer flask to obtain a precursor solution;

[0049] 3) Device preparation: In the deposition chamber of the microwave plasma chemical vapor deposition device, place the silicon wafer at the center above the substrate stage, vacuum the chamber (to a vacuum degree of 10-100Pa), and pass through the chamber to Inject hydrogen, adjust the microwave power and the pressure in the vacuum chamber, and excite and generate plasma. The process parameters u...

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Abstract

The invention relates to an iron-doped diamond dilute magnetic semiconductor and a preparation method thereof. It uses iron acetylacetonate as an iron source and absolute ethanol as a carbon source, and introduces iron acetylacetonate into a microwave plasma chemical vapor deposition device through absolute ethanol , growing iron-doped diamond on the substrate to introduce iron element into dilute magnetic diamond. The present invention uses iron acetylacetonate as the iron source for the first time, introduces it through volatilized absolute ethanol, prepares dilute magnetic diamond semiconductor by microwave plasma chemical vapor deposition method, and successfully grows diamond with ferromagnetic effect at room temperature. And found that with the increase of the amount of iron source, the magnetic strength of diamond presents a rising phenomenon. The research on it is conducive to exploring the dilute magnetic semiconductor properties of iron-doped diamond to the greatest extent, and it is also conducive to exploring more possibilities of magnetic doping of diamond.

Description

technical field [0001] The invention belongs to the field of preparation of dilute magnetic semiconductors, in particular to an iron-doped diamond with dilute magnetic semiconductor characteristics at room temperature and a preparation method thereof. Background technique [0002] Diluted magnetic semiconductor is a promising spin source and an important supporting material for a new generation of spin devices. Just half a century ago, a limited computer was so big that it filled an entire room, today we carry powerful "electronic devices" in our pockets. People's pursuit of miniaturization and more powerful electronic devices is endless, however, heat dissipation and technical difficulties, such as tunneling effect, hinder the further development of conventional silicon-based transistors. Researchers continue to search for solutions, and one promising approach is spintronics, because it takes less energy to control the spin of an electron than it does to move a charge. Ho...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/27C23C16/511C23C16/513C23C16/517H01L43/10
CPCC23C16/274C23C16/276C23C16/278H10N50/85
Inventor 赵洪阳马志斌程振祥王欢蔡康
Owner WUHAN PUDI VACUUM TECH CO LTD
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