Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Iron-doped diamond dilute magnetic semiconductor and preparation method thereof

A technology of dilute magnetic semiconductor and diamond, applied in the field of iron-doped diamond and its preparation, can solve the problems of sensitive growth parameters, complex diamond growth conditions, etc., and achieves the effects of low deposition pressure, adjustable microwave power, and accelerated deposition

Active Publication Date: 2020-05-22
WUHAN PUDI VACUUM TECH CO LTD
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there are currently no literature and patent reports on this type of diamond, because the growth conditions of this type of diamond are very sensitive to growth parameters, so it is difficult to obtain by conventional methods

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Iron-doped diamond dilute magnetic semiconductor and preparation method thereof
  • Iron-doped diamond dilute magnetic semiconductor and preparation method thereof
  • Iron-doped diamond dilute magnetic semiconductor and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] A method for preparing an iron-doped diamond dilute magnetic semiconductor, the specific steps are as follows:

[0031] 1) Substrate pretreatment: use diamond suspension to ultrasonically clean the substrate (silicon wafer) to increase the surface energy of the substrate and facilitate diamond nucleation;

[0032] 2) Preparation of precursor solution: Iron acetylacetonate was used as iron source, absolute ethanol was used as carbon source, and 0.1 g of iron acetylacetonate was dissolved in 400 ml of absolute ethanol in a conical flask to obtain a precursor solution;

[0033] 3) Device preparation: In the deposition chamber of the microwave plasma chemical vapor deposition device, place the silicon wafer at the center above the substrate stage, vacuum the chamber (to a vacuum degree of 10-100Pa), and pass through the chamber to Inject hydrogen, adjust the microwave power and the pressure in the vacuum chamber, and excite and generate plasma. The process parameters used a...

Embodiment 2

[0038] A method for preparing an iron-doped diamond dilute magnetic semiconductor, the specific steps are as follows:

[0039]1) Substrate pretreatment: use diamond suspension to ultrasonically clean the substrate (silicon wafer) to increase the surface energy of the substrate and facilitate diamond nucleation;

[0040] 2) Preparation of precursor solution: Iron acetylacetonate was used as iron source, absolute ethanol was used as carbon source, and 0.2 g of iron acetylacetonate was dissolved in 400 ml of absolute ethanol in the Erlenmeyer flask to obtain a precursor solution;

[0041] 3) Device preparation: In the deposition chamber of the microwave plasma chemical vapor deposition device, place the silicon wafer at the center above the substrate stage, vacuum the chamber (to a vacuum degree of 10-100Pa), and pass through the chamber to Inject hydrogen, adjust the microwave power and the pressure in the vacuum chamber, and excite and generate plasma. The process parameters us...

Embodiment 3

[0046] A method for preparing an iron-doped diamond dilute magnetic semiconductor, the specific steps are as follows:

[0047] 1) Substrate pretreatment: use diamond suspension to ultrasonically clean the substrate (silicon wafer) to increase the surface energy of the substrate and facilitate diamond nucleation;

[0048] 2) Preparation of precursor solution: Iron acetylacetonate was used as iron source, absolute ethanol was used as carbon source, and 0.2 g of iron acetylacetonate was dissolved in 400 ml of absolute ethanol in the Erlenmeyer flask to obtain a precursor solution;

[0049] 3) Device preparation: In the deposition chamber of the microwave plasma chemical vapor deposition device, place the silicon wafer at the center above the substrate stage, vacuum the chamber (to a vacuum degree of 10-100Pa), and pass through the chamber to Inject hydrogen, adjust the microwave power and the pressure in the vacuum chamber, and excite and generate plasma. The process parameters u...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to an iron-doped diamond dilute magnetic semiconductor and a preparation method thereof. It uses iron acetylacetonate as an iron source and absolute ethanol as a carbon source, and introduces iron acetylacetonate into a microwave plasma chemical vapor deposition device through absolute ethanol , growing iron-doped diamond on the substrate to introduce iron element into dilute magnetic diamond. The present invention uses iron acetylacetonate as the iron source for the first time, introduces it through volatilized absolute ethanol, prepares dilute magnetic diamond semiconductor by microwave plasma chemical vapor deposition method, and successfully grows diamond with ferromagnetic effect at room temperature. And found that with the increase of the amount of iron source, the magnetic strength of diamond presents a rising phenomenon. The research on it is conducive to exploring the dilute magnetic semiconductor properties of iron-doped diamond to the greatest extent, and it is also conducive to exploring more possibilities of magnetic doping of diamond.

Description

technical field [0001] The invention belongs to the field of preparation of dilute magnetic semiconductors, in particular to an iron-doped diamond with dilute magnetic semiconductor characteristics at room temperature and a preparation method thereof. Background technique [0002] Diluted magnetic semiconductor is a promising spin source and an important supporting material for a new generation of spin devices. Just half a century ago, a limited computer was so big that it filled an entire room, today we carry powerful "electronic devices" in our pockets. People's pursuit of miniaturization and more powerful electronic devices is endless, however, heat dissipation and technical difficulties, such as tunneling effect, hinder the further development of conventional silicon-based transistors. Researchers continue to search for solutions, and one promising approach is spintronics, because it takes less energy to control the spin of an electron than it does to move a charge. Ho...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/27C23C16/511C23C16/513C23C16/517H01L43/10
CPCC23C16/274C23C16/276C23C16/278H10N50/85
Inventor 赵洪阳马志斌程振祥王欢蔡康
Owner WUHAN PUDI VACUUM TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com