Terahertz emission source based on transition metal chalcogenide and excitation method
A technology of chalcogenides and transition metals, applied in the field of terahertz band devices, can solve the problems of inability to effectively radiate elliptically polarized terahertz waves, terahertz signal noise, etc., to improve mobility and nonlinear coefficient, and stabilize lattice structure, the effect of improving the modulation efficiency
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[0044] Example 1
[0045] Such as figure 1 As shown, the terahertz emission source of this embodiment includes a quartz substrate 1 and a tungsten disulfide crystal thin film layer 2. The thickness of the thin film layer is 100 nm, a frequency of 800 nm, a pulse width of 60 fs, and a femtosecond laser with a repetition frequency of 1 KHz are used as the pump light source 3. The pump power in this embodiment is 0.42~2.00mJ / cm 2 , The femtosecond laser pulse is incident on the surface of the pumping radiation device at an oblique angle of 45°, and detects the terahertz wave radiation on the 45° reflecting surface. Using zinc telluride as the detection crystal to detect terahertz waves on the 45° reflecting surface, the results are as follows Figure 4 (a) Shown.
[0046] The terahertz wave radiation obtained in this embodiment has a signal-to-noise ratio of -18.4--37.4dB in the range of 0.58-2.5THz, and an electron mobility of 50-150cm 2 V -1 S -1 , The radiation electric field inten...
Example Embodiment
[0047] Example 2
[0048] Such as figure 2 As shown, the terahertz emission source of this embodiment includes a quartz substrate 1 and a tungsten disulfide thin film layer 2. The thickness of the thin film layer is 0.72 nm, and a femtosecond laser with a frequency of 800 nm, a pulse width of 60 fs, and a 1KHz repetition frequency is used as the pump light source 3. Among them, the pump power is 4.53~6.51mJ / cm 2 . The femtosecond laser pulse is incident on the surface of the pumping radiation device at an oblique angle of 45°, and the terahertz wave radiation is detected at 45° in the transmission path, and the terahertz wave is detected at the 45° transmission surface. The result is as follows Figure 4 (b) Shown.
[0049] The terahertz wave radiation obtained in this embodiment has a signal-to-noise ratio of -17.6 to -34.9 dB in the range of 0.58 to 2.5 THz, and an electron mobility of 150 to 200 cm 2 V -1 S -1 , The radiation electric field intensity is 0.11~0.26kV / cm.
Example Embodiment
[0050] Example 3
[0051] The difference between this embodiment and Embodiment 2 is that the thickness of the film layer is 8 nm. It is found through inspection that the film layer in this embodiment can radiate elliptically polarized terahertz waves.
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