Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for effectively controlling diamond wire wet chemical black silicon battery piece EL poor performance

A diamond wire and wet chemical technology, applied in the manufacture of circuits, electrical components, final products, etc., can solve the problems of low cell efficiency, open voltage, low short current, metal pollution, etc., achieve normal appearance and efficiency, and reduce production Cost, the effect of reducing the proportion of bad and low-efficiency tablets

Active Publication Date: 2018-11-30
RISEN ENERGY (CHANGZHOU) CO LTD
View PDF5 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] In the photovoltaic industry, with the continuous development and innovation of technology, in the texturing process, the wet chemical method of manufacturing diamond wire-cut black silicon textured surface has achieved mass production. The wet chemical method is also called MCCE (Metal Catalyzed Chemical Etching). It means the metal-catalyzed chemical corrosion method. Using this method to manufacture nano-scale black silicon texture requires the use of heavy metals as catalysts; however, if the metal remains on the surface of the silicon wafer during the black silicon texture production process, it will inevitably cause metal pollution. As a result, the efficiency of the cell is low, and electroluminescence (English electroluminescent), also known as electric field luminescence, referred to as EL
"Tortoise crack" is the EL photographed image of the wet-process black silicon cell, which has an image similar to the stripe structure of the turtle's back shell. The opening voltage and short current of this type of cell are lower than normal cells, so the efficiency is low

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for effectively controlling diamond wire wet chemical black silicon battery piece EL poor performance
  • Method for effectively controlling diamond wire wet chemical black silicon battery piece EL poor performance
  • Method for effectively controlling diamond wire wet chemical black silicon battery piece EL poor performance

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] A kind of method of effectively controlling diamond wire wet chemical black silicon battery sheet EL bad (crack) of the present invention, it comprises the following steps:

[0022] 1) Texturing: After the original silicon wafer is treated by removing the damaged layer, silver deposition, digging holes, preliminary desilvering, and hole expansion, it is treated with a chemical mixed solution, which is an acidic mixed solution composed of hydrochloric acid and water , and the volume ratio in the mixed solution is hydrochloric acid: water=36:199, the concentration of the hydrochloric acid is 37%, and the weight loss of the wet-process black silicon textured silicon wafer is controlled at 0.35~0.45g;

[0023] 2) From the diffusion process of the normal production line process, it can be processed in the normal production line process.

[0024] When processing in step 1), the feed rate of cleaning machine is controlled at 270s / 480pcs (sheet); The principle of replenishment ...

Embodiment 2

[0027] A method for effectively controlling the EL defect (crack) of the diamond wire wet chemical black silicon cell, it comprises the following steps:

[0028] 1) Texturing: After the original silicon wafer is treated by removing the damaged layer, silver deposition, digging holes, preliminary desilvering, and hole expansion, it is treated with a chemical mixed solution, which is an acidic mixed solution composed of hydrochloric acid and water , and the volume ratio in the mixed solution is hydrochloric acid: water=45:190, the concentration of the hydrochloric acid is 37%, and the weight loss of wet-process black silicon textured silicon wafers is controlled at 0.35~0.45g;

[0029] 2) From the diffusion process of the normal production line process, it can be processed in the normal production line process.

[0030] When processing in step 1), the feed rate of cleaning machine is controlled at 230s / 480pcs (sheet); The principle of replenishment of hydrochloric acid in the mi...

Embodiment 3

[0033] A method for effectively controlling the EL defect (crack) of the diamond wire wet chemical black silicon cell, it comprises the following steps:

[0034] 1) Texturing: After the original silicon wafer is treated by removing the damaged layer, silver deposition, digging holes, preliminary desilvering, and hole expansion, it is treated with a chemical mixed solution, which is an acidic mixed solution composed of hydrochloric acid and water , and the volume ratio in the mixed solution is hydrochloric acid: water=85:150, the concentration of the hydrochloric acid is 37%, and the weight loss of the wet-process black silicon textured silicon wafer is controlled at 0.35~0.45g;

[0035] 2) From the diffusion process of the normal production line process, it can be processed in the normal production line process.

[0036] When processing in step 1), the feed rate of cleaning machine is controlled at 215s / 480pcs (sheet); The principle of replenishment of hydrochloric acid in the...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a method for effectively controlling diamond wire wet chemical black silicon battery piece EL poor performance. The method comprises the following steps of 1) texturing: performing damage layer removal, silver deposition, hole digging, primary silver removal and hole expansion on an original silicon wafer (water rinsing is carried out in all the steps), and carrying out solution processing, wherein the solution is an acidic mixed solution composed of hydrochloric acid and water, and the volume ratio of hydrochloric acid to water in the mixed solution is 1:6 to 1:1, theconcentration of hydrochloric acid is 36%-38%, and the weight reduction of the wet-process black silicon texturing silicon wafer is controlled to be 0.35g to 0.45g; 2 ) performing a diffusion processof a normal production line process and then carrying out processing in the normal production line process, namely, sequentially carrying out diffusion, PSG removal, etching, PECVD film coating, screen printing and testing. By virtue of the method for effectively controlling diamond wire wet chemical black silicon battery piece EL poor performance provided by the invention, the low efficiency proportion of battery piece quantity production can be lowered.

Description

technical field [0001] The invention relates to the technical field of polycrystalline silicon solar cell production, in particular to a method for effectively controlling the EL failure of diamond wire wet chemical black silicon cells. Background technique [0002] In the photovoltaic industry, with the continuous development and innovation of technology, in the texturing process, the wet chemical method of manufacturing diamond wire-cut black silicon textured surface has achieved mass production. The wet chemical method is also called MCCE (Metal Catalyzed Chemical Etching). It means the metal-catalyzed chemical corrosion method. Using this method to manufacture nano-scale black silicon texture requires the use of heavy metals as catalysts; however, if the metal remains on the surface of the silicon wafer during the black silicon texture production process, it will inevitably cause metal pollution. As a result, the efficiency of the battery sheet is low, and electrolumines...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18
CPCH01L31/1804Y02P70/50
Inventor 章天瑜张文锋胡玉婷张文超范启泽张雄伟
Owner RISEN ENERGY (CHANGZHOU) CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products