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Formation method and structure of igbt device

A device and cell technology, applied in the field of IGBT device formation methods and structures, can solve problems such as increased capacitance, and achieve the effects of improving on-state voltage drop, increasing process window, and improving capacitance Cgc

Active Publication Date: 2021-10-19
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The purpose of the present invention is to provide a method for forming an IGBT device, so as to solve the problem that the capacitance between the gate and the collector in the IGBT device is easily increased when the short-circuit resistance of the device is improved in the existing IGBT device

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  • Formation method and structure of igbt device
  • Formation method and structure of igbt device
  • Formation method and structure of igbt device

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Embodiment Construction

[0036] As mentioned in the background art, in trench type IGBT devices, a redundant cell (dummy cell) is formed between multiple functional cells to reduce the channel density, thereby improving the short-circuit resistance of the IGBT device. question. However, this method will correspondingly cause the capacitance Cgc between the gate and the collector to increase, thereby affecting the overall performance of the device.

[0037] In order to improve the capacitance Cgc between the gate and the collector, it is generally necessary to form a thick dielectric layer between the gate and the collector in the redundant cells. figure 1 is a structural schematic diagram of an IGBT device, such as figure 1 As shown, the IGBT device has a plurality of functional cells 10B and a redundant cell 10A between the plurality of functional cells 10B, and the redundant cell 10A includes a collector 11, a dielectric layer 12 and a Gate electrode 13. Wherein, the dielectric layer 12 can be fo...

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Abstract

The invention provides a method for forming an IGBT device and its structure. The IGBT device has multiple functional cells and redundant cells between the multiple functional cells. The forming method includes: performing an ion implantation process on the semiconductor substrate in the first region of the redundant cells; and performing a first oxidation process to form a dielectric layer on the semiconductor substrate in the first region. That is, after performing the ion implantation process, the oxidation rate of the semiconductor substrate in the first region can be effectively increased, and a dielectric layer with a thicker and more uniform thickness can be formed, thereby effectively improving the gate and collector in the IGBT device. The capacitance Cgc between the electrodes. Moreover, the dielectric layer formed by combining the ion implantation and the first oxidation process has a smaller size, which reduces the area occupied by the redundant cells and greatly improves the conduction voltage drop of the IGBT device.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for forming an IGBT device and its structure. Background technique [0002] Insulated Gate Bipolar Transistor (IGBT, Insulated Gate Bipolar Transistor) is a new type of high-power device, which combines MOSFET gate voltage control characteristics and low on-resistance characteristics of bipolar transistors, improving device withstand voltage and on-resistance mutual restraint. Among them, IGBT devices generally include planar IGBT devices and trench IGBT devices. For planar IGBT devices, there is a parasitic Junction Field Effect Transistor (JFET) region between each cell. The JFET resistance is an important part of the device resistance and also weakens the conductance modulation effect of the IGBT device. important factor. Therefore, in order to reduce the saturated conduction voltage drop of the body in the device, the trench structure can be us...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/331H01L29/739
CPCH01L29/66325H01L29/7393
Inventor 刘剑
Owner SEMICON MFG INT (SHANGHAI) CORP
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