An n-type amorphous oxide semiconductor thin film transistor with flexible substrate and a preparation method thereof

A technology of amorphous oxide and thin-film transistors, which is applied in semiconductor/solid-state device manufacturing, transistors, semiconductor devices, etc., can solve the problems of high production costs, low geological reserves, unfavorable sustainable development, etc., and achieve sustainable development The effect of development, interface structure matching, and device cost reduction

Inactive Publication Date: 2018-12-11
ZHEJIANG UNIV
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the InGaZnO material contains two precious metals, In and Ga, especially the element In. Indium is a rare precious metal with very little geological reserves. It is reported that it will be exhausted in about 15 years, which not only causes its production cost to be high. It is not high enough, and it is not conducive to sustainable development

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • An n-type amorphous oxide semiconductor thin film transistor with flexible substrate and a preparation method thereof
  • An n-type amorphous oxide semiconductor thin film transistor with flexible substrate and a preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] 1) Put the weighed ZnO, Al 2 o 3 , SnO 2 Add the powder into a ball mill jar with agate beads, add alcohol as a medium to mill on a ball mill, filter the milled slurry and place it in a drying oven for drying, and grind and filter the dried powder obtained after drying in a mortar. A 3-inch ZnAlSnO ceramic target was prepared by hot pressing and sintering.

[0035] 2) Use polyethylene naphthalate (PEN) as the organic flexible substrate, and ultrasonically clean it for 40 minutes in the order of acetone, ethanol, deionized water, and ethanol, and fix the cleaned substrate to the grid mask .

[0036] 3) A layer of AZO thin film was deposited on the organic flexible substrate by magnetron sputtering method with AZO ceramic sheet as the target material. The deposition conditions were as follows: the distance between the substrate and the target was 100 mm, and the growth chamber was pumped to vacuum at 1.0 x 10 -3 Above mTorr, the growth chamber is fed with Ar and O ...

Embodiment 2

[0045] 1) Put the weighed ZnO, Al 2 o 3 , SnO 2 Add the powder into a ball mill jar with agate beads, add alcohol as a medium to mill on a ball mill, filter the milled slurry and place it in a drying oven for drying, and grind and filter the dried powder obtained after drying in a mortar. A 3-inch ZnAlSnO ceramic target was prepared by hot pressing and sintering.

[0046] 2) Use polyethylene terephthalate (PET) as the organic flexible substrate, and ultrasonically clean it for 40 minutes in the order of acetone, ethanol, deionized water, and ethanol, and fix the cleaned substrate to the gate mask plate.

[0047] 3) A layer of AZO thin film was deposited on the organic flexible substrate by magnetron sputtering method with AZO ceramic sheet as the target material. The deposition conditions were as follows: the distance between the substrate and the target was 100 mm, and the growth chamber was pumped to vacuum at 1.0 x 10 -3 Above mTorr, the growth chamber is fed with Ar ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to view more

Abstract

The invention discloses an n-type amorphous oxide semiconductor thin film transistor with a flexible substrate and a preparation method thereof. The flexible substrate is an organic polymer substrateand the n-type ZnAlSnO amorphous oxide film is a channel layer. The preparation method comprises that follow steps of: growing AZO electrode on an organic substrate as a gate electrode; growing 150-300 nm Al2O3 insulation layer; growing morphous ZnAlSnO thin films as channel layer; depositing AZO electrode as source electrode and drain electrode aft that thin film is post-treated; finally, growing a layer of Al2O3 thin film for packaging so as to complete the preparation of the n-type amorphous ZnAlSnO thin film transistor. All the films were prepared by magnetron sputtering. The flexible n-type amorphous oxide semiconductor thin film transistor prepared by the invention has the advantages of full transparency, high mobility, no In element, simple process, low cost and the like, and can be used for the production of high-end flexible display screens.

Description

technical field [0001] The invention relates to an amorphous oxide semiconductor thin film transistor, in particular to an n-type flexible amorphous oxide semiconductor thin film transistor and a preparation method thereof. Background technique [0002] Compared with traditional electronics, flexible electronics has greater flexibility and can adapt to different working environments to a certain extent. Flexible electronic products can meet customers' deformation requirements for equipment, and are wearable and intelligent products. However, flexible electronic products have strict technical requirements and are relatively more difficult to produce, which restricts the development of flexible electronics. First of all, flexible electronics must have good stretchability and bendability on the basis of not damaging their own electronic properties, which poses new challenges to the materials for making circuits; secondly, the preparation conditions of flexible electronics and t...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/24H01L29/43H01L29/49H01L29/51H01L29/786H01L21/34H01L21/02H01L21/443H01L23/29H01L21/56
CPCH01L29/247H01L21/02631H01L21/443H01L21/56H01L23/291H01L29/43H01L29/4908H01L29/517H01L29/66969H01L29/78603H01L29/78693
Inventor 吕建国吕容恺李思嵚叶志镇
Owner ZHEJIANG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap