A thermally tuned grating coupler
A grating coupler and thermal tuning technology, which is applied in the coupling of optical waveguides, instruments, optics, etc., can solve the problems of mode mismatch coupling efficiency drop, and achieve the effects of avoiding substrate loss, increasing coupling bandwidth, and improving heating efficiency
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Embodiment 1
[0023] Such as figure 1 , 2 , 3, a thermally tunable grating coupler, comprising a silicon substrate 1, a buried oxide layer 2 arranged on the silicon substrate 1, a shallow etching silicon heating platform 6 arranged on the buried oxide layer 2, arranged on The oblique incident grating 9 on the shallow etching silicon heating platform 6, and the micro heaters 10, 11 arranged on the buried oxide layer 2 for heating the shallow etching silicon heating platform 6 and the oblique incident grating 9; The oblique incidence grating 9 is connected to a ridge waveguide 7 which is connected to a strip waveguide 8 .
[0024] According to the coupling theory of the grating coupler, the central wavelength of the grating coupler is related to its effective refractive index, and the silicon material has a large thermo-optic coefficient, so the heating platform 6 and the micro heaters 10, 11 can be heated by shallow etching of silicon. The way heat is applied directly to the grating couple...
Embodiment 2
[0026] In this embodiment, on the basis of Embodiment 1, a layer of insulating layer 3 is laid on the top surface of the buried oxide layer 2, the top surface of the shallow-etched silicon heating platform 6, and the top surface of the oblique incident grating 9, The micro heaters 10 , 11 are arranged on the insulating layer 3 . In this embodiment, heat is provided by growing a thin layer of insulating layer 3 with relatively high thermal conductivity on the silicon material, which greatly improves the thermal efficiency.
[0027] More specifically, the insulating layer 3 is an aluminum oxide insulating layer.
Embodiment 3
[0029] In this embodiment, on the basis of Embodiment 1 or Embodiment 2, the middle part of the silicon substrate 1 is hollowed out; the buried oxide layer 2 is provided with several deep etching grooves 4 for the middle part of the silicon substrate 1 Carry out hollowing out. Among them, the number of deep etching grooves 4 is 6, and the 6 deep etching grooves 4 are arranged around the shallow etching silicon heating platform 6 in turn; a cantilever support beam 5 is arranged between any two adjacent deep etching grooves 4 for The shallow etching silicon heating platform 6 and the oblique incident grating 9 are supported.
[0030] Since the silicon material has a large thermal conductivity coefficient, hollowing out the thermal isolation groove right below the grating coupler can effectively prevent heat loss through the silicon substrate 1, thereby greatly reducing the energy consumption of the grating coupler and improving Efficiency of thermal tuning.
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