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A melanophosphene waveform thin film transistor for flexible display and a preparation method thereof

A thin-film transistor and flexible display technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as unsatisfactory durability, easy cracking, and easy breakage, and achieve carrier mobility increase, Effects of suppressing surface oxidation and high current switching ratio

Inactive Publication Date: 2018-12-18
张玉英
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, there are disadvantages of poor flexibility, easy cracking and poor durability
[0007] In summary, due to the high requirements of flexible displays for transistor materials, the existing black phosphorus transistor materials are poor in flexibility, easy to break, and have unsatisfactory durability, which seriously affects the application of black phosphorus in flexible displays and flexible displays. Therefore, it is of great significance to develop black phosphorene waveform thin film transistors for flexible displays

Method used

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  • A melanophosphene waveform thin film transistor for flexible display and a preparation method thereof

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Experimental program
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Effect test

Embodiment 1

[0027] (1) Apply a pre-tension force to the flexible polyimide substrate to make the substrate in a stretched state, then heat-deposit red phosphorus on the surface of the polyimide substrate under reduced pressure, after cooling, pressurize at room temperature to make the red phosphorus Phosphorus is transformed into black phosphorene through phase transition, and the black phosphorene nano film is prepared; the thickness of the polyimide substrate is 0.9 mm, and the pre-stretching ratio is 0.9 times; the temperature of heating deposition is 260 ° C, and the decompression pressure is 0.11 Pa; the pressure of phase transition is 9GPa; the thickness of black phosphorene nano film is 9nm;

[0028] (2) By dry transfer, with polybutadiene and polymethyl methacrylate as the polymeric support layer, the black phosphorene nano-film is heated to a certain temperature under the action of nitrogen pressure, and the boron nitride is transferred to the black phosphorus The surface of the ...

Embodiment 2

[0037] (1) Apply a pre-tension force to the flexible polyimide substrate to make the substrate in a stretched state, then heat-deposit red phosphorus on the surface of the polyimide substrate under reduced pressure, after cooling, pressurize at room temperature to make the red phosphorus Phosphorus is transformed into black phosphorene through phase transition, and the black phosphorene nano film is prepared; the thickness of the polyimide substrate is 0.7 mm, and the pre-stretching ratio is 0.7 times; the temperature of heating deposition is 230 ° C, and the decompression pressure is 0.08 Pa; the pressure of phase transition is 8Gpa; the thickness of black phosphorene nano film is 8nm;

[0038] (2) By dry transfer, with polybutadiene and polymethyl methacrylate as the polymeric support layer, the black phosphorene nano-film is heated to a certain temperature under the action of nitrogen pressure, and the boron nitride is transferred to the black phosphorus The surface of the ...

Embodiment 3

[0043] (1) Apply a pre-tension force to the flexible polyimide substrate to make the substrate in a stretched state, then heat-deposit red phosphorus on the surface of the polyimide substrate under reduced pressure, after cooling, pressurize at room temperature to make the red phosphorus Phosphorus is transformed into black phosphorene through phase transition, and the black phosphorene nano film is prepared; the thickness of the polyimide substrate is 1.3 mm, and the pre-stretching ratio is 1.7 times; the temperature of heating deposition is 280 ° C, and the decompression pressure is 0.16 Pa; the pressure of phase transition is 9GPa; the thickness of black phosphorene nano film is 12nm;

[0044] (2) By dry transfer, with polybutadiene and polymethyl methacrylate as the polymeric support layer, the black phosphorene nano-film is heated to a certain temperature under the action of nitrogen pressure, and the boron nitride is transferred to the black phosphorus The surface of the...

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Abstract

The invention belongs to the technical field of flexible electronic displays, and provides a melanophosphene waveform thin film transistor for a flexible display and a preparation method thereof. A melanophosphene waveform field effect thin film transistor is prepared by applying a pre-tension force to a flexible polyimide substrate, depositing a melanophosphene nano film on the surface of the substrate, forming a boron nitride protective layer, slowly releasing the pre-tension force, enabling the melanophosphene film to form a waveform of, and further evaporating an electrode. Compared with the traditional method, the waveform thin film transistor prepared by the invention not only has good flexibility, high critical tensile strain and critical compressive strain, but also has good stability, high carrier mobility and high current switching ratio, and can be used in a flexible electronic display.

Description

technical field [0001] The invention belongs to the technical field of flexible electronic displays, and provides a black phosphorene waveform thin film transistor for flexible displays and a preparation method. Background technique [0002] In recent years, two-dimensional crystal materials have become a new direction of semiconductor material research because of their superior electrical properties. Following graphene and molybdenum disulfide, recently, a new type of two-dimensional semiconductor material - black phosphorus, and the corresponding field-effect transistor devices prepared may replace traditional silicon and become the basic material of electronic circuits. Black phosphorus two-dimensional crystals have good electron mobility and a very high leakage current modulation rate, similar to silicon, the traditional material for electronic circuits. In addition to its superior electrical properties, the optical properties of black phosphorus also have enormous adva...

Claims

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Application Information

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IPC IPC(8): H01L21/335
CPCH01L29/66742
Inventor 张玉英
Owner 张玉英