A nondestructive evaluation of p-type silicon carbide crystals

Abstract

The invention relates to a non-destructive judgment of p-type silicon carbide crystal, which uses a variable temperature Raman spectrum to carry out spectral measurement on a p-type silicon carbide crystal sample, wherein the incident direction of the detection light is along the (000-1) direction of the silicon carbide wafer, the variable temperature measurement is a temperature range from room temperature to 800 K, and the temperature interval is 50 K. By analyzing and comparing the carrier-sensitive A1 longitudinal optical modes, whether the sample is p-type doped or not can be determined according to the change of the intensity and the peak position of A1 longitudinal optical modes. As the spectroscopic analysis method is adopt, carrier concentration of p-type silicon carbide crystal can be measured and analyzed without electrodes plated like Hall measurement. The detection process can be automated and programmed. The outgoing products can be inspected comprehensively. The detection process can also be used in the inspection of 2, 3, 4, 6 inches wafer products in the market.

Description

technical field [0001] The invention relates to a semiconductor single crystal performance testing technology, in particular to the non-destructive judgment of p-type silicon carbide crystals. Background technique [0002] Silicon carbide is the third-generation semiconductor material, and it is a wide-bandgap semiconductor material following the first-generation element semiconductors silicon and germanium, and the second-generation compound semiconductors gallium arsenide and indium phosphide. Compared with the previous two generations of semiconductor materials, silicon carbide has better physical and electronic properties and chemical stability. It has high thermal conductivity, strong breakdown field, and large drift rate of saturated electrons, so it has broad prospects in the preparation and application of high-temperature, high-frequency, high-power, corrosion-resistant and radiation-resistant devices, and is widely used in national defense, aerospace, communications...

AI Technical Summary

Problems solved by technology

However, when the doping is low, the color distinction of the wafer is not obvious, and it is more necessary to accurately determine

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