A nondestructive evaluation of p-type silicon carbide crystals
A technology of silicon carbide and crystal, which is applied in the field of non-destructive determination of p-type silicon carbide crystal, can solve the problem of indistinct chip color distinction, and achieve the effect of automation and program control
Inactive Publication Date: 2018-12-21
NANTONG UNIVERSITY
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Abstract
The invention relates to a non-destructive judgment of p-type silicon carbide crystal, which uses a variable temperature Raman spectrum to carry out spectral measurement on a p-type silicon carbide crystal sample, wherein the incident direction of the detection light is along the (000-1) direction of the silicon carbide wafer, the variable temperature measurement is a temperature range from room temperature to 800 K, and the temperature interval is 50 K. By analyzing and comparing the carrier-sensitive A1 longitudinal optical modes, whether the sample is p-type doped or not can be determined according to the change of the intensity and the peak position of A1 longitudinal optical modes. As the spectroscopic analysis method is adopt, carrier concentration of p-type silicon carbide crystal can be measured and analyzed without electrodes plated like Hall measurement. The detection process can be automated and programmed. The outgoing products can be inspected comprehensively. The detection process can also be used in the inspection of 2, 3, 4, 6 inches wafer products in the market.
Description
technical field [0001] The invention relates to a semiconductor single crystal performance testing technology, in particular to the non-destructive judgment of p-type silicon carbide crystals. Background technique [0002] Silicon carbide is the third-generation semiconductor material, and it is a wide-bandgap semiconductor material following the first-generation element semiconductors silicon and germanium, and the second-generation compound semiconductors gallium arsenide and indium phosphide. Compared with the previous two generations of semiconductor materials, silicon carbide has better physical and electronic properties and chemical stability. It has high thermal conductivity, strong breakdown field, and large drift rate of saturated electrons, so it has broad prospects in the preparation and application of high-temperature, high-frequency, high-power, corrosion-resistant and radiation-resistant devices, and is widely used in national defense, aerospace, communications...
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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/66
CPCH01L22/12
Inventor 李祥彪杨培培崔俊黄云婷姚诗怡苏延东陈宇
Owner NANTONG UNIVERSITY
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