Solar cell and preparation method thereof
A solar cell and electrode technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of grid shading and high resistivity, and achieve the effects of improving conversion efficiency, improving quality, and improving short-circuit current.
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[0064] The manufacturing method of the solar cell provided by an embodiment of the present invention includes the following steps:
[0065] A first electrode 21 is formed on the light-receiving side of the power generating body 1; a second electrode 22 is formed on the backlight side of the power generating body 1; wherein, the first electrode 21 includes a first graphene layer.
[0066] In the embodiment of the present invention, the power generating body 1 is obtained by a conventional manufacturing method, and will not be repeated here. Preferably, the power generation body 1 is a silicon heterojunction power generation body or a perovskite power generation body.
[0067] Further, the second electrode 22 includes a second graphene layer, a transparent conductive oxide layer, or a metal layer; the embodiment of the present invention does not specifically limit the preparation method of the transparent conductive oxide layer or the metal layer. Preferably, the transparent conductive...
Example Embodiment
[0083] Example 1
[0084] A silicon heterojunction solar cell, such as image 3 As shown, it includes: an electrode body 1, a first electrode 21, and a second electrode 22, wherein the electrode body 1 sequentially includes from bottom to top: a P-type amorphous silicon doped layer 132, a second amorphous silicon intrinsic layer 122, an N-type silicon wafer 110, a first amorphous silicon intrinsic layer 121, and an N-type amorphous silicon doped layer 131.
[0085] The first electrode 21 is a first graphene layer and is provided on the upper surface of the N-type amorphous silicon doped layer 131;
[0086] The second electrode 22 is a second graphene layer and is provided on the lower surface of the P-type amorphous silicon doped layer 132.
[0087] The thickness of the N-type silicon wafer 110 is 120 um, the thickness of the first amorphous silicon intrinsic layer 121 is 10 nm, the thickness of the second amorphous silicon intrinsic layer 122 is 10 nm, and the thickness of the N-type...
Example Embodiment
[0089] Example 2
[0090] A silicon heterojunction solar cell, such as Figure 4 As shown, the preparation method includes the following steps:
[0091] (1) Preparation of electrode body 1:
[0092] The electrode body 1 is manufactured by a conventional method. The electrode body 1 is a heterojunction electrode body, which from bottom to top includes: a P-type amorphous silicon doped layer 132, a second amorphous silicon intrinsic layer 122, and an N-type silicon Wafer 110, a first intrinsic amorphous silicon layer 121 and an N-type amorphous silicon doped layer 131;
[0093] (2) Preparation of the first electrode 21:
[0094] The first electrode 21 is prepared by gallium-catalyzed chemical vapor deposition method, which specifically includes the following steps:
[0095] a. In the first cavity, with metal gallium as a catalyst, in a vacuum state, heat the gallium to 1200°C, and pass in 1sccm of methane and 250sccm of 6N argon for 300s; methane is decomposed into carbon atoms and hydrog...
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