A kind of using method of hfo2 base ferroelectric material
A technology of ferroelectric materials and ferroelectric thin films, which is used in instruments, nonlinear optics, optics, etc., can solve the problems of poor semiconductor compatibility, insufficient miniaturization ability, and high power consumption, and achieves outstanding miniaturization ability. , Excellent CMOS compatibility, high stability effect
Active Publication Date: 2020-11-17
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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[0005] In view of the above-mentioned problems or deficiencies, in order to solve the problems of poor semiconductor compatibility, high power consumption and insufficient miniaturization capabilities of existing nonlinear optical materials, the present invention provides a HfO 2 Methods of use of base ferroelectric materials
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[0028] The present invention will be further elaborated below with reference to the accompanying drawings and embodiments.
[0029] Ferroelectric HfO with a yttrium content of 3.8 mol.% and a thickness of 20 nm 2 The film is an example to describe the specific steps in the present invention in detail:
[0030] Step 1: Using Magnetron Sputtering Deposition Technology on SiO 2 A 100nm TiN film was first deposited on the / Si substrate as the bottom electrode.
[0031] Take SiO 2 / Si substrate, its surface is cleaned with organic solvent and deionized water to remove impurities. Organic solvents include acetone and ethanol. The silicon wafers were immersed in acetone, ethanol, and deionized water in turn, placed in an ultrasonic cleaner for ultrasonic cleaning for 3 minutes each, and immediately dried with nitrogen.
[0032] a. The cleaned SiO 2 / Si substrate is placed above the target in the vacuum chamber, the target-to-substrate distance is fixed at 55mm, and the substrat...
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Abstract
The invention belongs to the field of semiconductor devices and nonlinear optics applications, in particular to a HfO 2 Methods of use of base ferroelectric materials. The present invention will be used for HfO in the semiconductor storage industry 2 Base ferroelectric materials are used as nonlinear optical materials in nonlinear optical components. Ferroelectric materials have spontaneous polarization characteristics, and the spontaneous polarization can be reversed with the external electric field and can still maintain the inherent nonlinearity when the power is turned off. optical properties. The designed metal structure of the device is also used to localize the electric field in the ferroelectric HfO 2 layer, resulting in stronger second harmonic excitation, excellent CMOS compatibility and outstanding miniaturization capability, and higher stability in a wider temperature range. It can be used in electro-optic switching, laser frequency modulation, sensor detection and other fields. It is of great significance to the development of optical components with semiconductor compatibility and miniaturization.
Description
technical field [0001] The invention belongs to the application field of semiconductor devices and nonlinear optics, in particular to a HfO 2 Methods of use of base ferroelectric materials. Background technique [0002] Nonlinear optical components are widely used in the fields of optical communication and integrated optics. For example, various nonlinear crystals are used to make electro-optic switches and laser modulation. The sum frequency and the difference frequency can realize the conversion of laser frequency, and obtain various lasers ranging from ultraviolet to vacuum ultraviolet, and long to far infrared. With the continuous improvement of people's requirements for device integration, it has become particularly important to find a nonlinear optical material with semiconductor compatibility, miniaturization, and low power consumption. [0003] Although there are many known materials with nonlinear properties, metal oxides are more favored by the industry. The trad...
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IPC IPC(8): G02F1/355
CPCG02F1/3558
Inventor 毕磊黄飞秦俊邓龙江
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA