Bonded copper wire and preparation method thereof

A copper wire and bonding technology, which is applied in the field of bonded copper wire and its preparation, can solve the problems of uneven mechanical properties of products, affecting the mechanical properties of products, and affecting the service life of finished products, so as to improve surface oxidation resistance and improve molding Stability and quality, and the effect of improving ductility

Inactive Publication Date: 2019-01-01
上海万生合金材料有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This process mainly has the following defects: first, in this process, the billet of bonded copper wire is produced by horizontal continuous casting, and the process of horizontal continuous casting is very complicated and difficult to control; second, the intermediate The alloy and copper are fused and cast horizontally without any process treatment, which will lead to uneven dispersion of other metal elements in the copper alloy, thereby affecting the mechanical properties of the product; third, the bonding copper wire after horizontal continuous casting There is a phenomenon of stress concentration in the billet, if it is not annealed for stress relief, it will cause defects in the finished product, thus affecting the mechanical properties of the product
Compared with the preparation method of bonded copper wire published in Chinese patent document CN1949493A, this preparation method is relatively simple and easy to control. At the same time, annealing treatment is performed after stretching, which improves the mechanical properties of the product, but this manufacturing method still has the following defects: The copper alloy ingot formed by casting has stress concentration. If it is rolled directly without relevant heat treatment, the mechanical properties of the product will be uneven, which will affect the service life of the finished product.

Method used

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  • Bonded copper wire and preparation method thereof
  • Bonded copper wire and preparation method thereof
  • Bonded copper wire and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0028] Example 1 (based on the preparation of a bonding copper wire with a diameter of 20 μm):

[0029] The mass percentage content of each component of the bonding copper wire is as follows: beryllium 0.0001%, iron 0.0001%, silicon 0.0001%, platinum 0.0001%, vanadium 0.001%, calcium 0.0001%, the total amount of other unavoidable impurity elements 0.0001%, and the balance is copper.

[0030] The preparation process is as follows: Step (1) smelting: Weigh each trace element, add trace elements beryllium Be, iron Fe, silicon Si, platinum Pt, vanadium V, calcium Ca, and other unavoidable impurity elements to the raw material copper ( The added element is below 10PPM), placed in a vacuum furnace melting crucible, vacuumed to 10ˉ3Pa, backfilled with argon to a slight positive pressure in the vacuum furnace, and heated and mixed (the temperature for heating and mixing is controlled at 1000-2000 ℃), the obtained copper liquid is poured into the mould, and a copper rod of 8 mm is mad...

Embodiment 2

[0036] Embodiment 2 (based on preparing a bonding copper wire with a diameter of 20 μm):

[0037] The mass percentage content of each component of the bonding copper wire is as follows: beryllium 0.00255%, iron 0.00055%, silicon 0.00055%, platinum 0.00055%, vanadium 0.003%, calcium 0.00255%, the total amount of other unavoidable impurity elements 0.00505%, and the balance is copper.

[0038] The preparation process is as follows: Step (1) smelting: Weigh each trace element, add trace elements beryllium Be, iron Fe, silicon Si, platinum Pt, vanadium V, calcium Ca, and other unavoidable impurity elements to the raw material copper ( The added element is less than 10PPM), put it into the melting crucible of the vacuum furnace, evacuate to 10-3Pa, and then backfill argon to the slight positive pressure in the vacuum furnace, and carry out heating and mixing (the temperature for heating and mixing is controlled at 1000 -2000°C), the obtained copper liquid is poured into the mold t...

Embodiment 3

[0044] Embodiment 3 (based on preparing a bonding copper wire with a diameter of 20 μm):

[0045] The mass percentage content of each component of the bonding copper wire is as follows: beryllium 0.0050%, iron 0.0010%, silicon 0.001%, platinum 0.0010%, vanadium 0.0050%, calcium 0.0050%, the total amount of other unavoidable impurity elements 0.01%, and the balance is copper.

[0046] The preparation process is as follows: Step (1) smelting: Weigh each trace element, add trace elements beryllium Be, iron Fe, silicon Si, platinum Pt, vanadium V, calcium Ca, and other unavoidable impurity elements to the raw material copper ( The added element is below 10PPM), placed in a vacuum furnace melting crucible, vacuumed to 10ˉ3Pa, backfilled with argon to a slight positive pressure in the vacuum furnace, and heated and mixed (the temperature for heating and mixing is controlled at 1000-2000 ℃), the obtained copper liquid is poured into the mould, and a copper rod of 8 mm is made; step ...

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Abstract

The invention discloses a bonded copper wire. The bonded copper wire is prepared from the following components in percentage by mass: 0.0001%-0.0050% of beryllium, 0.0001-0.0010% of iron, 0.0001%-0.001% of silicon, 0.0001%-0.0010% of platinum, 0.001%-0.0050% of vanadium, 0.0001%-0.0050% of calcium, 0.0001%-0.01% of inevitable other impurity elements, and the balance of copper. A preparation methodfor the bonded copper wire comprises the following steps: (1) smelting; (2) rough-medium pulling; (3) fine pulling; (4) annealing; (5) re-winding; and (6) packaging. The preparation method can meet mechanical properties of a bonding material, and can provide the bonded copper wire with better surface oxidization resistance. Moreover, the preparation method is simple and convenient to operate, enables the processing material to obtain excellent mechanical properties, and meets practical using requirements.

Description

technical field [0001] The invention relates to a bonding copper wire and a preparation method thereof, and belongs to the technical field of lead materials for semiconductor packaging and production processes thereof. Background technique [0002] Chinese patent document CN1949493A discloses a bonding copper wire. The material formula of the bonding copper wire disclosed in this document is: calcium 0.0005%-0.001%, cerium or titanium 0.0003-0.0007%, and the balance is copper, and its content is not 99.9996% lower. Using the copper wire disclosed in this document as the bonding material reduces the price of the bonding wire on the one hand, and on the other hand meets the requirements for high electrical conductivity and bonding wire strength. However, this solution is used to improve the bonding wire The surface oxidation resistance metal element cerium or titanium content is low, so the oxidation resistance is not satisfactory. [0003] Chinese patent document CN1949493A...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C22C9/00B21C1/04C22C1/02C22F1/08
CPCC22C9/00B21C1/003B21C1/04C22C1/02C22F1/08
Inventor 刘实顾贤刚
Owner 上海万生合金材料有限公司
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