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A novel submicron-scale radioactive film source and its preparation method

A submicron-level, radioactive technology, applied in the application of radioactive source radiation, obtaining electric energy from radioactive sources, nuclear engineering, etc., can solve problems such as difficult to achieve and easy to damage the film

Active Publication Date: 2020-10-30
HEFEI INSTITUTES OF PHYSICAL SCIENCE - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] For submicron-scale films, it is difficult to prepare substrate-free self-supporting films by physical or chemical methods.
It is almost impossible to peel off the submicron film from the substrate by physical and mechanical methods, but by using the chemical method of dissolving the substrate, even if the submicron film can be completely desorbed, due to the intrinsic tension of the solution surface, the film is easily destroyed

Method used

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  • A novel submicron-scale radioactive film source and its preparation method

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Embodiment 1

[0026] A method for preparing a novel submicron-scale radioactive film source, the steps of the method are as follows, and the flow process is as follows figure 1 Shown:

[0027] A: Select a suitable substrate material 3: copper foil (rolled oxygen-free copper, thickness 0.05mm, purity 99.95%, surface polishing), on the substrate material 3, use chemical vapor deposition (CVD) to grow and prepare graphene layer 2 : The copper foil that needs to grow graphene is ultrasonically cleaned in acetone, ethanol, and deionized water for 10 minutes, then ultrasonically cleaned with 25% hydrochloric acid for 10 minutes, and finally the copper foil is ultrasonically cleaned three times with deionized water, each time for 5 minutes. Place the cleaned copper foil in a CVD tube furnace in a hydrogen-argon gas mixture (volume ratio H 2 :Ar=1:9), the temperature was raised to 1000°C at a flow rate of 100 sccm (mL / min), and the temperature and gas flow were kept constant, annealed for 30 minut...

Embodiment 2

[0033] A method for preparing a novel submicron radioactive film source, the steps of the method are as follows:

[0034] A: Select suitable substrate material 3: aluminum foil (thickness of aluminum foil is 0.05mm, purity greater than 99.9%, surface polishing), and use chemical vapor deposition (CVD) to grow and prepare graphene layer 2 on substrate material 3: will need to grow The graphene aluminum foil was ultrasonically cleaned in acetone, ethanol, and deionized water for 10 minutes, then ultrasonically cleaned with 25% hydrochloric acid for 10 minutes, and finally the aluminum foil was ultrasonically cleaned with deionized water three times, each time for 5 minutes. The cleaned aluminum foil is placed in a CVD tube furnace, in a mixture of hydrogen and argon (volume ratio H 2 :Ar=1:9), the temperature was raised to 1000°C at a flow rate of 100 sccm (mL / min), and the temperature and gas flow were kept constant, annealed for 30 minutes, and then 5 sccm acetylene was introd...

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Abstract

The invention belonging to the technical field of film preparation relates to a novel submicron-order radioactive film source and a preparation method thereof. The film source is formed by a graphenelayer and a submicron-order radioactive film that is deposited on and attached to the surface of the graphene layer. The radioactive material in the submicron-order radioactive film is a simple substance, a compound or mixture that includes beta radioisotope or alpha radioisotope. In addition, the preparation method comprises: depositing graphene on a substrate material; depositing and preparing asubmicron-order radioactive film on the graphene layer; placing the substrate material in a substrate solving liquid and dissolving the substrate material; and then carrying out washing and drying toobtain the novel submicron-order radioactive film source. The novel submicron-order radioactive film source meets the usage requirement of the self-supporting film and does not affect the performanceof the radioactive source. The preparation method is simple; and the application range of the submicron-order radioactive film source is extended substantially.

Description

technical field [0001] The invention relates to a novel submicron radioactive thin film source and a preparation method thereof, belonging to the technical field of thin film preparation. Background technique [0002] Radioactive thin film sources are widely used in nuclear physics experiments and nuclear energy fields as experimental nuclear targets, gas target thin windows and various radioactive sources. In particular, with the rapid development of isotope nuclear battery technology, the miniaturization of the radioisotope source as its core has also attracted much attention. [0003] Submicron radioactive thin film source, as the name implies, the film thickness of radionuclide source is less than 1 μm, which can minimize the self-absorption effect of radioactive source film on decay particles as an energy source in isotope cells. For the radioisotope thin film source used in the isotope battery, the thin film source will try to adopt a double-sided emission structure, ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G21H1/00
CPCG21H1/00
Inventor 韩运成吴宜灿李桃生季翔王永峰
Owner HEFEI INSTITUTES OF PHYSICAL SCIENCE - CHINESE ACAD OF SCI
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