A light emit diode having a uniform electrode electric field distribution and a method for manufacture that same

Abstract

The invention relates to a light emitting diode with uniform electrode electric field distribution and a preparation method thereof. The diode comprises a substrate, a buffer layer, N-Type semiconductor transport layer, multiple quantum well layer, P-Type semiconductor transport layer, P-Type heavily doped semiconductor transport layer, current spreading layer; The N-type semiconductor transmission layer is partially exposed, and the exposed N-type semiconductor transmission layer is distributed with an N-type ohmic electrode;; An insulator layer is distributed on the current spreading layer,and the insulator layer is covered with P-Type - ohmic electrode; Holes of the same size are patterned distributed on the insulating layer; Said P-type ohmic electrode is divided into two parts, a column pattern electrode matching the holes in the insulating layer is distributed at the lower part, and an integral layered structure is arranged at the upper part, which is covered on the insulating layer. The structure of the invention improves the electric field distribution of the electrode and solves the problem of current crowding after the electric field distribution of the electrode is uniform.

Description

technical field [0001] The invention relates to the technical field of light-emitting diode semiconductors, in particular to a light-emitting diode device with uniform electrode electric field distribution and a preparation method thereof. Background technique [0002] Wide bandgap semiconductor materials (bandgap greater than or equal to 2.3eV) are called third-generation semiconductor materials, mainly including SiC, GaN, etc. Compared with the first-generation and second-generation semiconductor materials, the third-generation semiconductor materials have the characteristics of wider band gap, higher breakdown electric field, thermal conductivity and greater electron drift saturation velocity. These characteristics have led to the rapid development of nitride LED light-emitting diodes in optoelectronic devices in the blue, green and ultraviolet bands in recent years, and are widely used in lighting detection, medical phototherapy, sterilization, chemical catalysis and oth...

AI Technical Summary

Problems solved by technology

Although the above two structures slow down the current crowding effect to a certain extent, the influence on the electric field distribution of the electrodes is not mentioned

For the first SiO2 electron blocking layer structure, the SiO2 structure is located between the current spreading layer and the P-type transport layer to improve the current distribution. This structure has no obvious effect on the improvement of the electric field at the edge of the electrode; for the second P Extremely ohmic contact layer structure, palladium is a noble metal, and the metal embedded in the metal electrode has no effect on improving the electric field at the edge of the electrode, and additional noble metal materials also increase the production cost

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