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Ion strain sensor and preparation method and application thereof

A strain sensor, ion technology, applied in piezoelectric devices/electrostrictive devices, piezoelectric/electrostrictive/magnetostrictive devices, microstructure devices composed of deformable elements, etc., can solve conformal integration Difficulty, low sensitivity and other issues, to achieve the effect of low power consumption, high resolution, high spatial responsiveness

Inactive Publication Date: 2019-01-08
苏州海思纳米科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In view of this, the object of the present invention is to provide an ion strain sensor and its preparation method and application to overcome the problems of low sensitivity and difficulty in conformal integration in the prior art.

Method used

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  • Ion strain sensor and preparation method and application thereof
  • Ion strain sensor and preparation method and application thereof
  • Ion strain sensor and preparation method and application thereof

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preparation example Construction

[0056] ginseng figure 2 As shown, the present invention also discloses a preparation method of an ion strain sensor, comprising:

[0057] S1. Provide a perfluorosulfonic acid intermediate layer;

[0058] S2, forming an interfacial transition layer on both sides of the perfluorosulfonic acid intermediate layer;

[0059] S3, forming a surface electrode layer outside the interface transition layer.

[0060] Preferably, step S1 is specifically:

[0061] Provide Nafion-117 membrane; or,

[0062] Through the liquid-phase film casting method, the polymer and the ionic liquid are dissolved in an organic solvent to form a uniform solution, which is poured into a glass slide and dried to obtain a perfluorosulfonic acid intermediate layer.

[0063] Preferably, step S2 is specifically:

[0064] Roughening the perfluorosulfonic acid interlayer by plasma etching or grinding;

[0065] The interfacial transition layer is formed on both sides of the perfluorosulfonic acid intermediate lay...

Embodiment 1

[0094] In this embodiment, an ion strain sensor and an intelligent Braille recognition glove using it are taken as an example for illustration.

[0095] The ionic strain sensor uses 1200-grit sandpaper to roughen the polyelectrolyte film and then pre-treat it. The electrodes were then prepared by a cyclic impregnation reduction method.

[0096] The specific preparation method is:

[0097] Immerse it in [Au(Phen)Cl 2 ]Cl solution, take it out after soaking for 24h, and rinse with deionized water;

[0098] Then put it into a beaker filled with deionized water and put it in a water bath at 60°C, and then drop 5% Na by mass fraction into the beaker 2 SO 3 The solution completes the reduction process;

[0099] Dilute H with 0.5mol / L at 75°C 2 SO 4 Washing with solution and deionized water to remove Na+ ions that may be introduced during impregnation / reduction;

[0100] The prepared sensor film was clamped flat and fixed between two glass slides, and heated at 140°C for 2 ho...

Embodiment 2

[0111] In this embodiment, the ion strain sensor and the smart sign language recognition glove using it are taken as an example for illustration.

[0112] In the ion strain sensor, the surface electrode layer is prepared by vacuum filtration.

[0113] The specific preparation method is:

[0114] Weigh 4.5g TPU, 0.9g EMITFSI dissolved in 30mL DMAC, stir magnetically for 24 hours to obtain a uniform dispersion, take 3ml of the uniform dispersion and inject it on a glass slide, and dry it on a heating platform at 60°C to obtain a perfluorosulfonic acid interlayer;

[0115]Weigh 3 mg of silver nanowires and disperse them in water, then weigh porous graphene and carbon tubes with a molar ratio of 1:0 to prepare an NMP dispersion, the concentration of porous graphene is 1.3 mg / mL, and ultrasonicate for 30 minutes in an ice bath;

[0116] Deposit silver nanowires and porous graphene / carbon tube layers on PVDF filter paper layer by layer, and then dry on a heating platform at 40°C to...

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Abstract

The invention discloses an ion strain sensor and a preparation method and application thereof. The ion strain sensor comprises a perfluorosulfonic acid intermediate layer, interfacial transition layers arranged on both sides of the perfluorosulfonic acid intermediate layer, and a surface electrode layer arranged on the outside of the interfacial transition layer. The interfacial transition layer serves as an ion migration channel, and the sensing signal of the ion strain sensor originates from the anisotropic transmission and accumulation of hydrogen ions in the perfluorosulfonic acid intermediate layer during deformation. A mechanical strain information is read by an innovative ion-collecting strain sensor. A nano-electrode material is combined with a polyelectrolyte material. A fast-responding ion transport channel is constructed, which overcomes the key problems of poor flexible conformability and low accuracy, realizes complex multi-dimensional azimuth recognition and weak signal high-sensitive sensing function, and has the characteristics of low power consumption, high resolution, high stability, high spatial responsiveness and so on.

Description

technical field [0001] The invention relates to the technical field of sensors and their applications, in particular to an ion strain sensor and its preparation method and application. Background technique [0002] With the rapid development of smart materials and flexible electronics, it has opened up a new way for smart wearable applications such as portable medical care and human-computer interaction. [0003] Human hand movements can reflect the changes in the external environment and the state of human activities at any time, and have remarkable characteristics such as complexity, multi-dimensionality, and variability. The detection of hand movements can provide important reference value for the reading of Braille information, the multi-dimensional detection of sign language activities, and the establishment of human-computer interaction dialogues. [0004] At present, most of the sensors used in human activity detection are traditional piezoelectric and piezoresistive...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B81B3/00
CPCB81B3/0018B81B3/0035B81B3/0054
Inventor 陈韦杨赢明月
Owner 苏州海思纳米科技有限公司
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