Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A flowable chemical vapor deposition method of a silicon oxide film

A flow chemistry and vapor deposition technology, applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems such as high proportion, inability to meet actual needs, and reduction of H-Si bond density

Active Publication Date: 2019-01-08
铜陵安德科铭电子材料科技有限公司
View PDF9 Cites 9 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the WO2016065219A1 patent application, the precursors bis(disilylamino)silane (IIB) and tri(ethylsilyl)amine that can reduce the H-Si bond density are disclosed. Such TSA dimers or trimers Although the material can reduce the hydrogen content, the ratio of H:Si is still very high, reaching 14:5, which still cannot meet the actual demand.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A flowable chemical vapor deposition method of a silicon oxide film
  • A flowable chemical vapor deposition method of a silicon oxide film
  • A flowable chemical vapor deposition method of a silicon oxide film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0060] At a temperature of 20°C, react cyclosilane with a nitrogen-containing compound and deposit it on a single crystal silicon wafer substrate with a medium resistivity (that is, a resistivity of 8-12Ω·cm, such as 8Ω·cm, 10Ω·cm, 12Ω·cm) On the bottom and the silicon pattern wafer, a flowable silicon-nitrogen film is formed; then the flowable silicon-nitrogen film is in O 3 Medium oxidation for 10 minutes, annealing at 700°C for 3 hours after oxidation, and finally a dense silicon oxide film is obtained.

[0061] The cyclosilane is cyclopentasilane, cyclohexasilane or cyclooctylsilane. The nitrogen-containing compound is ammonia, nitrogen / hydrogen mixed gas, hydrazine or nitrogen trifluoride. o 3As an oxidizing gas, the oxidizing gas can also be oxygen, water vapor, nitrous oxide, oxygen plasma or nitrous oxide plasma. A pre-deposition treatment is performed on the above-mentioned single crystal silicon wafer substrate in advance, and the specific pre-deposition treatment...

Embodiment 2

[0064] The difference from Example 1 is that the flowable SiN film is in O 3 Medium oxidation for 15 minutes, followed by annealing at 900°C for 1 hour to obtain a dense silicon oxide film. The process parameters of the plasma flowable chemical vapor deposition are as follows: the flow rate of cyclosilane is 5000 mg / min, the flow rate of nitrogen-containing compound is 1000 sccm, and the in-situ plasma power density is 3.5 W / cm 2 , the pressure is 12Torr.

Embodiment 3

[0066] The difference from Example 1 is that the flowable SiN film contains O 3 The atmosphere is treated with ultraviolet light for 12 minutes, and after oxidation, it is cured by bombardment with oxygen-containing ion beams at 400°C. Repeat the above steps until a dense silicon oxide film with a certain thickness is obtained. The process parameters of the plasma flowable chemical vapor deposition are as follows: the flow rate of cyclosilane is 2000mg / min, the flow rate of nitrogen-containing compound is 600sccm, and the in-situ plasma power density is 0.3W / cm 2 , the pressure is 5Torr.

[0067] The resulting dense silicon oxide film was immersed in a 100:1 hydrofluoric acid solution to measure the wet etching rate, and the wet etching rate was 2.2 times that of the silicon oxide film prepared by traditional thermal deposition.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Densityaaaaaaaaaa
Power densityaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention provides a flowable chemical vapor deposition method of a silicon oxide film with a lower etching rate, wherein a cyclosilane with a ring molecular structure is used as a precursor, andthe cyclosilane is reacted with a nitrogen-containing compound to deposit on a substrate to form a flowable silicon nitride film, and the silicon oxide film is obtained by oxidation of oxidizing gas.The Si-H bond density and wet etch rate are significantly reduced. Aft high temperature annealing or ultraviolet curing, bottom-up, seamless gap filling can be realized on that patterned silicon wafer; High quality silicon oxide film can be formed on the blank silicon wafer. Good uniformity and good covering performance.

Description

【Technical field】 [0001] The invention relates to the technical field of silicon oxide thin films, in particular to a flowable chemical vapor deposition method for silicon oxide thin films. 【Background technique】 [0002] In semiconductor processing, since the size of the device is required to be smaller and smaller, the semiconductor usually has a high aspect ratio (HAR) structure, and gaps between the high aspect ratio structures must be filled with insulating materials. Examples of insulating materials used in gap-fill applications include shallow trench isolation, inter-metal dielectric layers, passivation layers, patterning applications, and more. Due to shrinking device geometries and lower thermal loads, seamless gapfilling of high aspect ratio structures by conventional thermal deposition processes has become increasingly difficult. [0003] Flowable chemical vapor deposition (FCVD) is a new preparation method for thin film materials, usually using aminosilane compo...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L21/02H01L21/762
CPCH01L21/02164H01L21/0217H01L21/02211H01L21/02271H01L21/02318H01L21/02337H01L21/02348H01L21/76224
Inventor 不公告发明人
Owner 铜陵安德科铭电子材料科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com