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Broadband terahertz wave modulator, preparation method and broadband terahertz wave modulation system

A terahertz wave and modulation system technology, applied in the terahertz field, can solve problems such as high pump optical power, device thermal damage, and large insertion loss, and achieve the effects of simple preparation process, large modulation depth, and large modulation depth

Inactive Publication Date: 2019-01-11
GUILIN UNIV OF ELECTRONIC TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] (2) Although a small amount exceeds 80%, it requires a high pump light power (greater than 2W), and high pump light power can easily cause thermal damage to the device
[0007] (3) The surface of such devices has metal structures and patterns, and since terahertz waves are impenetrable to metals, this will introduce a large insertion loss

Method used

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  • Broadband terahertz wave modulator, preparation method and broadband terahertz wave modulation system
  • Broadband terahertz wave modulator, preparation method and broadband terahertz wave modulation system

Examples

Experimental program
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Embodiment 1

[0033] The invention provides a preparation method of a broadband terahertz wave modulator. The preparation method comprises: using a glue spreader to spin-coat a layer of phase-change material vanadium dioxide film on the front and back of a double-sided polished high-resistance silicon substrate, The preparation process specifically includes the following steps:

[0034] 1. Select a double-sided polished high-resistance silicon wafer with a thickness of 300μm-700μm and a resistance value greater than 3000 ohms. The cm size is 1cm*1cm as the substrate.

[0035] 2. Put the double-sided polished high-resistance silicon wafer into the ultrasonic cleaning machine for 5-10 minutes.

[0036] 3. Put the cleaned high-resistance silicon wafer into the drying box and heat it for 15-20 minutes to dry the sample.

[0037] 4. Put the dried high-resistance silicon wafer on the glue homogenizer, turn on the vacuum pump to absorb the sample, and drop a drop of vanadium dioxide solution on t...

Embodiment 2

[0044] The present invention also provides a broadband terahertz wave modulator prepared by the method described in the first embodiment.

Embodiment 3

[0046] To achieve the above and other related objectives, the present invention also provides a broadband terahertz wave modulation system, which includes a first laser emitter, a second laser emitter, a terahertz wave emitter and the aforementioned modulator,

[0047] The first laser emitter emits a first laser beam to irradiate one side of the modulator and forms a first spot;

[0048] The second laser emitter emits a second laser beam to irradiate the other side of the modulator and form a second spot;

[0049] The terahertz wave emitter emits a terahertz wave incident on one side of the modulator and forms a third light spot;

[0050] The third light spot at least partially overlaps with the first light spot or the second light spot.

[0051] where the modulator is placed vertically as figure 1 The terahertz wave is shown propagating in the optical path.

[0052] In one embodiment, the first laser beam and the second laser beam are respectively incident on the two surfa...

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Abstract

The invention provides a broadband terahertz wave modulation system. The system comprises a first laser transmitter, a second laser transmitter, a terahertz wave transmitter and a modulator. The firstlaser transmitter transmits a first laser beam, and the first laser beam irradiates one surface of the modulator and forms a first facula. The second laser transmitter transmits a second laser beam,and the second laser beam irradiates the other surface of the modulator and forms a second facula. The terahertz wave transmitter transmits terahertz wave, the terahertz wave is incident on one surface of the modulator and forms a third facula. The third facula and the first facula or the second facula are at least partially overlapped. According to the system, two surfaces of a sample are respectively irradiated through utilization of the two laser beams, and through photothermal effect, phase-change material vanadium dioxide is transformed from an insulated state to a metallic state, so great depth modulation of terahertz wave transmission intensity is realized. According to the system, under relatively low optical power, broadband, great depth and rapid modulation can be realized. The terahertz wave modulator prepared by the method has important application value in rapid all-optical controlled terahertz communication in the future.

Description

technical field [0001] The invention relates to the field of terahertz technology, in particular to a broadband terahertz wave modulator, a preparation method and a modulation system. Background technique [0002] Terahertz (Terahertz: THz) waves generally refer to electromagnetic waves with frequencies in the range of 0.1 THz-10 THz. Due to the characteristics of strong penetrability, low photon energy, wide frequency bandwidth, and material fingerprints, terahertz waves have great application potential in airport security, biomedicine, and broadband communications. Terahertz wave intensity modulation is an essential link in the application of terahertz technology, but the current terahertz wave intensity modulation method is not conducive to the popularization and application of terahertz technology. [0003] Terahertz wave intensity modulation methods are usually divided into electronic control modulation, optical control modulation, temperature control modulation, magne...

Claims

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Application Information

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IPC IPC(8): G02F1/01
CPCG02F1/0126
Inventor 胡放荣王红江明珠张文涛银珊熊显名陈元枝陈涛韩家广王月娥
Owner GUILIN UNIV OF ELECTRONIC TECH