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Gold sputtering target

A gold sputtering and sputtering target technology, which is applied in the field of gold sputtering targets, can solve problems such as the influence of Au film frequency characteristics, and achieve the effect of excellent uniformity and good reproducibility of film thickness distribution

Active Publication Date: 2019-01-11
TANAKA PRECIOUS METAL IND
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The tuning-fork type quartz crystal resonator is suitable for miniaturization, but since the mass deviation of the Au film affects the frequency characteristics, it is strongly required to reduce the mass deviation of the Au film due to the film thickness deviation

Method used

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  • Gold sputtering target
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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0046] First, an Au block is inserted into a graphite crucible and melted. The Au melt was cast in a graphite mold to produce an Au ingot. The surface of the Au ingot was removed by grinding, and an Au blank (99.99% of purity) having a width of 190 mm, a length of 270 mm, and a thickness of 50 mm was produced. Next, the Au blank was hot-forged at a temperature of 800° C. to produce an Au target raw material with a width of 70 mm, a length of 200 mm, and a thickness of 45 mm. The machining rate during forging was set to 80% in all three axial directions. The forged Au target material was heat-treated at a temperature of 500° C. for 30 minutes. The heat-treated Au target material was ground to produce a disc-shaped Au sputtering target with a diameter of 152.4 mm and a thickness of 5 mm. Two Au sputtering targets were produced for the measurement of the characteristics of each part and the measurement of the film thickness characteristics. The same applies to the following e...

Embodiment 2～5、 comparative example 1～2

[0050] Except having applied the processing rate shown in Table 1 using the Au blank produced similarly to Example 1, it performed the forging process similarly to Example 1, and produced the Au target raw material. Next, the forged Au target material was heat-treated under the conditions shown in Table 1. Then, the Au sputtering target of the same shape as Example 1 was produced by grinding the heat-treated Au target raw material. The Vickers hardness of these Au sputtering targets, the average grain size, the preferential orientation plane of a sputtering surface, and the orientation index N of a {110} plane were measured and evaluated similarly to Example 1. These measurement results are shown in Table 2. Such an Au sputtering target was subjected to a film-forming step described later, and its characteristics were evaluated.

[0051] [Table 1]

[0052]

[0053] [Table 2]

[0054]

[0055] *Values ​​in parentheses are relative to HV tav ratio.

[0056] The Au sp...

Embodiment 6～10

[0061] Except having applied the processing rate shown in Table 4 using the Au blank produced similarly to Example 1, it performed the forging process similarly to Example 1, and produced the Au target raw material. Next, the forged Au target material was heat-treated under the conditions shown in Table 4. Then, the Au sputtering target of the same shape as Example 1 was produced by grinding the heat-treated Au target raw material.

[0062] [Table 4]

[0063]

[0064] The Vickers hardness of the obtained Au sputtering target was measured similarly to Example 1. In addition, the average crystal grain diameter of the Au sputtering target was measured according to the measuring method of the said plate-shaped sputtering target. As a result of the measurement, the average grain size (AD) of the sputtered surface, the first section, and the second section av1 、AD av2 、AD av3 ), the average value of the above values ​​(the average crystal grain size based on the target as a ...

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Abstract

Provided is a gold sputtering target that makes increased uniformity of Au film thickness distribution possible. This gold sputtering target is made of gold and unavoidable impurities and has a surface to be sputtered. In said gold sputtering target, the average Vickers hardness value is 40 to 60 and the average crystal grain diameter is 15 [mu]m to 200 [mu]m. In the surface to be sputtered, {110}planes of the gold are preferentially oriented.

Description

technical field [0001] This invention relates to gold sputtering targets. Background technique [0002] An Au film formed using a gold (Au) sputtering target is used in various fields due to the excellent chemical stability and electrical characteristics of Au itself. For example, in a quartz crystal resonator device, an Au sputtered film is used as an excitation electrode or the like formed on both surfaces of a quartz crystal chip. In quartz crystal resonator devices, the vibration frequency and the like are adjusted by the film thickness of the Au film. Therefore, an Au sputtering target capable of forming an Au film with a uniform film thickness distribution during sputtering is required. [0003] Regarding the shape of the sputtering target, plate-shaped sputtering targets such as a disk and a rectangular plate used in planar magnetron sputtering are generally known. In addition to this, a cylindrical sputtering target is also known. Compared with the plate-shaped sp...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/34C22F1/00C22F1/14
CPCC22F1/00C22F1/14H01J37/3426C23C14/3414C23C14/185C22C5/02B21B1/38B21C1/16B21C23/08B21J5/12C23C14/34C23C14/14
Inventor 加藤哲也水野阳平石仓千春
Owner TANAKA PRECIOUS METAL IND
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