A kind of semiconductor device and its preparation method, electronic device
An electronic device and semiconductor technology, which is applied in the direction of semiconductor devices, electric solid devices, radiation control devices, etc., can solve the problems of ion implantation impact, performance degradation of CMOS devices, etc., and achieve the effect of improving performance and yield
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[0063] The current manufacturing method of the semiconductor device includes the following steps: providing a substrate, a dielectric layer is formed on the substrate, and a plurality of isolation layers spaced from each other are formed on the dielectric layer; on the isolation layer and the forming a gate material layer on the dielectric layer to cover the isolation layer and the dielectric layer; patterning the gate material layer to form the gate structure.
[0064] In the preparation method, the isolation layer is first formed and then the gate material layer is formed and patterned. The problem brought about by this is that in the process of forming the gate material layer and patterning, it will form on the sidewall of the isolation layer. The residue of the gate material spacer, such as the residue of polysilicon, and the residue is not easy to remove, in order to completely remove the residue of the gate material layer, it must be over-etched, but the over-etch will af...
Embodiment 1
[0077] The preparation method of the semiconductor device of the present invention is described in detail below with reference to the accompanying drawings, figure 1 Shows a flow chart of the fabrication process of the semiconductor device of the present invention; Figures 2A-2H A schematic cross-sectional view of a structure obtained by implementing the method for manufacturing a semiconductor device according to an embodiment of the present invention is shown.
[0078] The invention provides a method for preparing a semiconductor device, such as figure 1 Shown, the preparation method of described semiconductor device comprises:
[0079] Step S1: providing a substrate, a gate dielectric layer is formed on the substrate, and an isolation layer is formed on the gate dielectric layer;
[0080] Step S2: forming a spacer on the sidewall of the isolation layer and covering part of the gate dielectric layer;
[0081] Step S3: forming a gate structure on the isolation layer and t...
Embodiment 2
[0152] The present invention also provides a semiconductor device, such as Figure 2H As shown, the semiconductor device includes:
[0153] Base 201;
[0154] a gate dielectric layer on the substrate;
[0155] an isolation layer 206, located on part of the gate dielectric layer;
[0156] a spacer 207, located on the sidewall of the isolation layer and covering part of the gate dielectric layer;
[0157] The gate structure 209 is located on the isolation layer and the gate dielectric layer.
[0158] The substrate 201 may be at least one of the materials mentioned below: silicon, silicon-on-insulator (SOI), silicon-on-insulator (SSOI), silicon-germanium-on-insulator (S-SiGeOI) and germanium-on-insulator Silicon oxide (SiGeOI), etc.
[0159] Optionally, wherein, the base includes a pixel region.
[0160] In conventional devices, shallow trench isolation (STI) structures are usually used as the isolation structure, but in this application, ion implantation regions and isolat...
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