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A kind of manufacturing method of lithium niobate electro-optical device thick-film wire electrode

A technology of electro-optic devices and manufacturing methods, which is applied in the field of optical communication, can solve the problems of waste of precious metals, high stress of thick-film electrodes, etc., and achieve the effect of solving a large amount of waste and overcoming excessive stress

Active Publication Date: 2020-09-18
XIAN SINO HUAXIN MEASUREMENT & CONTROL
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The invention provides a method for making a thick-film lead electrode of a lithium niobate electro-optic device to overcome the defects of the prior art. The invention not only overcomes the problem of excessive stress of the thick-film electrode, but also solves the problem of a large amount of waste of precious metals

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  • A kind of manufacturing method of lithium niobate electro-optical device thick-film wire electrode
  • A kind of manufacturing method of lithium niobate electro-optical device thick-film wire electrode
  • A kind of manufacturing method of lithium niobate electro-optical device thick-film wire electrode

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Embodiment 1

[0046] A method for manufacturing a thick-film wire electrode of a lithium niobate electro-optical device, comprising the following steps:

[0047] S1: Coating a metal seed layer on a lithium niobate substrate with a proton exchange waveguide to obtain a metallized substrate. The coating method is a plasma deposition method. The metal seed layer is divided into two layers, and the lower layer is adhesive The strength enhancement layer, the adhesion enhancement layer is nickel simple substance, the upper layer is a gold layer with a purity of not less than 99.99%, the thickness of the upper layer of the metal seed layer is 35nm, and the thickness of the lower layer of the metal seed layer is 15nm;

[0048] The preparation process of lithium niobate substrate with proton exchange waveguide is as follows:

[0049] S01: Using silicon dioxide as a barrier layer, an optical waveguide is fabricated on the surface of a lithium niobate substrate by annealing proton exchange;

[0050] S0...

Embodiment 2

[0056] A method for manufacturing a thick-film wire electrode of a lithium niobate electro-optical device, comprising the following steps:

[0057] S1: Coating a metal seed layer on a lithium niobate substrate with a proton exchange waveguide to obtain a metallized substrate. The coating method is a physical vapor deposition method. The metal seed layer is divided into two layers, and the lower layer is for adhesion The strength enhancement layer, the adhesion enhancement layer adopts chromium element, the upper layer is a gold layer with a purity of not less than 99.99%, the thickness of the upper layer of the metal seed layer is 20nm, and the thickness of the lower layer of the metal seed layer is 10nm;

[0058] The preparation process of lithium niobate substrate with proton exchange waveguide is as follows:

[0059] S01: Using silicon dioxide as a barrier layer, an optical waveguide is fabricated on the surface of a lithium niobate substrate by annealing proton exchange; ...

Embodiment 3

[0066] A method for manufacturing a thick-film wire electrode of a lithium niobate electro-optical device, comprising the following steps:

[0067] S1: Coating a metal seed layer on a lithium niobate substrate with a proton exchange waveguide to obtain a metallized substrate. The coating method is magnetron sputtering. The metal seed layer is divided into two layers, and the lower layer is an adhesive layer. Adhesion enhancement layer, the adhesion enhancement layer is made of titanium element, the upper layer is a gold layer with a purity of not less than 99.99%, the thickness of the upper layer of the metal seed layer is 50nm, and the thickness of the lower layer of the metal seed layer is 20nm;

[0068] The preparation process of lithium niobate substrate with proton exchange waveguide is as follows:

[0069] S01: Using silicon dioxide as a barrier layer, an optical waveguide is fabricated on the surface of a lithium niobate substrate by annealing proton exchange;

[0070]...

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Abstract

The invention discloses a manufacture method for a lithium niobate electro-optic device thick film traverse electrode. The manufacture method comprises the following steps that: S1: plating a lithiumniobate substrate with proton exchange waveguide with a metal seed layer, and obtaining a metallized substrate, wherein the metal seed layer is divided into two layers, the lower layer is an adhesiveforce enhancement layer, and the upper layer is a gold layer of which the purity is not lower than 99.99%; S2: carrying out photoresist spin coating on the metallized substrate, and carrying out baking, exposure and developing to obtain a photoresist pattern similar to an electrode; S3: dipping the metallized substrate with the photoresist in gold electroplating liquid to be electroplated; S4: using photoresist removal liquid to remove the photoresist, and forming a raised electrode pattern; and S5: firstly, removing the gold layer of the metal seed layer, and then, removing an adhesion layerto finish the preparation of the thick film traverse electrode. By use of the manufacture method, the problem of overlarge thick film electrode stress is overcome, and the problem that a great quantity of noble metal is wasted is also solved.

Description

technical field [0001] The invention belongs to the field of optical communication or optical fiber sensing, and relates to a method for manufacturing an optical passive device, in particular to a method for manufacturing a thick-film wire electrode of a lithium niobate electro-optic device. Background technique [0002] Integrated circuits are divided into three categories: thin film circuits, thick film circuits, and semiconductor circuits. Circuits mean electronic components such as wires, resistors, and dielectrics. Compared with thin-film wires, thick-film wires are more resistant to high current and high power, and have a higher operating frequency, so they are more suitable for making wire electrodes for high-speed electronic devices. Due to the urgent demand for the modulation rate of lithium niobate devices in optical communication networks and optical fiber sensors, the industry is currently trying to use thicker gold wires as traveling wave electrodes for lithium ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G02F1/03
CPCG02F1/0316
Inventor 杨广张雪荣王健康黄昀昀
Owner XIAN SINO HUAXIN MEASUREMENT & CONTROL