Broadband amplifier with operating frequency approaching fT/2
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A technology of working frequency and amplifier, applied in the direction of amplifier, amplifier combination, improving amplifier to expand bandwidth, etc., can solve the problems of low Q value, deteriorating amplifier noise figure, reducing amplifier power gain, etc., to improve high frequency gain and ensure stability The effect of sexuality and feasibility
Active Publication Date: 2019-01-22
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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However, the large resistance in the feedback structure will deteriorate the noise figure of the amplifier and reduce the power gain of the amplifier. In addition, the large capacitor in the feedback structure only plays the role of isolating DC. Generally speaking, silicon-based technology Large capacitance, its Q value is low, which will reduce the power gain of the amplifier and deteriorate the noise figure of the amplifier. The above two reasons greatly limit the application of this bandwidth expansion technology
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[0032] This embodiment provides a working frequency close to f T / 2 broadband amplifier, including the first stage amplifier, the second stage amplifier, the third stage amplifier and the current bias circuit. The structures of the gain units of the amplifiers at all levels are exactly the same, such as figure 1shown, which consists of two heterojunction bipolar transistors Q 1 , Q 2 , two capacitors C 1 、C 2 , two inductors L 1 , L 2 . where Q 1 the emitter with Q 2 The collectors are connected to form a cascode structure, which reduces the transistor Q 2 The Miller effect between the collector and the base, thereby improving the reverse isolation of the amplifier circuit; the capacitor C 2 One terminal with transistor Q 1 The base is connected, the other end is connected to GND, which provides RF ground for the common base stage and ensures the normal operation of the cascode structure; the inductance L 1 , L 2 with capacitance C 1 Constitute an LC series reson...
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Abstract
The invention discloses a broadband amplifier with operating frequency approaching fT/2; the invention adopts the technical scheme that the LC series resonant circuit is connected in parallel with thecascode structure, which improves the high-frequency gain of the gain unit and expands the low-frequency bandwidth of the gain unit at the same time, and furthermore, realizes the effect of high gainand wide frequency band at the position approaching to fT/2. The matching circuit of the invention is composed of on-chip passive devices, and when designing the matching network, the parasitic effect of the signal input and the output Pad in the F band is taken into consideration, so that the stability and the feasibility of the circuit are ensured. The gain unit in the present invention is biased by a bandgap reference circuit, and the bias current can be accurately adjusted by controlling the bias voltage to achieve the optimal performance of the amplifier.
Description
technical field [0001] The invention belongs to the field of integrated circuit design, and in particular relates to a T / 2 broadband amplifier. Background technique [0002] Due to the special position of submillimeter wave and terahertz wave in the electromagnetic spectrum, compared with microwave and light wave, it has many special properties, such as penetrability, low energy, transient, broadband, coherence, Directionality and water absorption, etc., make it have irreplaceable important application value in many fields such as biomedicine, physical chemistry, astronomy, military, national security, and anti-terrorism. However, when designing a transceiver in this frequency band, there are many challenges and difficulties due to the limitation of the manufacturing process, especially the design of the amplifier for signal amplification. [0003] First of all, there are many passive components in the transceiver circuit, such as inductors, capacitors, transmission lines...
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