Broadband amplifier with operating frequency approaching fT/2
A technology of working frequency and amplifier, applied in the direction of amplifier, amplifier combination, improving amplifier to expand bandwidth, etc., can solve the problems of low Q value, deteriorating amplifier noise figure, reducing amplifier power gain, etc., to improve high frequency gain and ensure stability The effect of sexuality and feasibility
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[0032] This embodiment provides a working frequency close to f T / 2 broadband amplifier, including the first stage amplifier, the second stage amplifier, the third stage amplifier and the current bias circuit. The structures of the gain units of the amplifiers at all levels are exactly the same, such as figure 1shown, which consists of two heterojunction bipolar transistors Q 1 , Q 2 , two capacitors C 1 、C 2 , two inductors L 1 , L 2 . where Q 1 the emitter with Q 2 The collectors are connected to form a cascode structure, which reduces the transistor Q 2 The Miller effect between the collector and the base, thereby improving the reverse isolation of the amplifier circuit; the capacitor C 2 One terminal with transistor Q 1 The base is connected, the other end is connected to GND, which provides RF ground for the common base stage and ensures the normal operation of the cascode structure; the inductance L 1 , L 2 with capacitance C 1 Constitute an LC series reson...
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