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Titanium dioxide film gas sensor with niobium-doped anatase phase and manufacturing method for same

A gas sensor, titanium dioxide technology, applied in the sensor field, can solve the problems of wide detection range, low detection limit, complex process, etc., and achieve the effect of wide detection range, low detection limit, and improved sensitivity

Active Publication Date: 2019-02-01
HUBEI UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the current methods for preparing niobium-doped titanium dioxide gas-sensitive thin films by hydrothermal method are all completed in two steps. The first step is hydrothermal preparation of niobium-doped titanium dioxide powder. Inkjet printing and other methods are used to form thin films, and finally high-temperature sintering is used to prepare gas-sensitive thin films. The process is complex and costly; and the current H 2 It is difficult to have both low detection limit and wide detection range at room temperature for gas-sensing characteristics

Method used

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  • Titanium dioxide film gas sensor with niobium-doped anatase phase and manufacturing method for same
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  • Titanium dioxide film gas sensor with niobium-doped anatase phase and manufacturing method for same

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preparation example Construction

[0032] A method for preparing a niobium-doped anatase phase titanium dioxide film gas sensor, comprising the following steps:

[0033] (1) Sputtering a niobium-doped titanium dioxide seed layer on the substrate surface; the sputtering target is Nb x Ti 2-x o 3 , where x=0.05~0.2;

[0034] (2) performing the first annealing on the substrate sputtered with the niobium-doped titanium dioxide seed layer in the step (1), forming a niobium-doped anatase phase titanium dioxide seed layer on the substrate surface;

[0035] (3) The seed layer of the substrate obtained in the step (2) with the niobium-doped anatase phase titanium dioxide seed layer on the surface is immersed downward in the hydrothermal reaction precursor solution, and the hydrothermal reaction is carried out on the substrate A niobium-doped anatase titanium dioxide film is formed on the bottom surface; the hydrothermal reaction precursor solution includes water, hydrochloric acid, a titanium dioxide precursor and ni...

Embodiment 1

[0052] (1) Use acetone, ethanol, and deionized water in sequence to ultrasonically clean the glass substrate, and dry it in a drying oven;

[0053] (2) Magnetron sputtering niobium-doped titanium dioxide seed layer: the Nb 0.12 Ti 1.88 O 3 The target is installed on the cathode target position of the magnetron sputtering system, the distance between the target and the substrate is adjusted to 60mm, and the Nb 0.12 Ti 1.88 O 3 The RF sputtering power of the target is 60w, and the sputtering deposition is continued on the cleaned and dried glass substrate for 40min to form a niobium-doped titanium dioxide seed layer on the surface of the substrate;

[0054] (3) Anneal the sample obtained in step 2 at 400 °C for 1 h under high vacuum to obtain a niobium-doped anatase phase titanium dioxide seed layer, and the annealing vacuum degree is less than 10 -3 Pa;

[0055] (4) carry out hydrothermal reaction:

[0056] Configure the hydrothermal reaction precursor solution: water, e...

Embodiment 2

[0078] Other conditions were the same as in Example 1, except that the hydrothermal reaction temperature in step (4) was changed to 120°C, and the hydrothermal reaction time was changed to 5h.

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Abstract

The invention provides a titanium dioxide film gas sensor with a niobium-doped anatase phase and a manufacturing method for same, which belong to the field of sensor. The manufacturing method comprises the following steps: depositing a niobium-doped titanium dioxide seed layer on the surface of a substrate; forming a niobium-doped anatase phase titanium dioxide seed layer by annealing; growing a titanium dioxide gas sensitive film with the niobium-doped anatase on the seed layer by hydrothermal method; preparing a Pt interdigital electrode on the film after annealing again; and obtaining a titanium dioxide film gas sensor with the niobium-doped anatase phase. The manufacturing method prepares the titanium dioxide gas sensitive film with the niobium-doped anatase by hydrothermal method at one-step, so that the steps are simple; can make the sensor work at a room temperature by effective niobium-doped modification; and has both low detection limit and wide detection range. The sensor canuse a low cost substrate such as glass, which further reduces the manufacturing cost of the sensor.

Description

technical field [0001] The invention relates to the technical field of sensors, in particular to a niobium-doped anatase phase titanium dioxide film gas sensor and a preparation method thereof. Background technique [0002] Gas sensors are widely used in today's industry, electronic information, metallurgical industry, national defense, aerospace and many other fields closely related to life. The core of gas sensor design is the gas sensitive material. The gas sensor based on metal oxide semiconductor (MOS) material has the characteristics of convenient manufacture, low cost and high sensitivity, and has attracted extensive attention. Among them, titanium dioxide is more due to its low cost, non-toxicity, high stability, and become one of the most promising materials in the field of MOS sensors. It is of great significance to design a titanium dioxide gas sensor with low cost, high sensitivity, wide detection range, fast response and room temperature operation to meet the a...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/12C23C14/35C23C14/08
CPCC23C14/083C23C14/35G01N27/127
Inventor 鲍钰文高云夏晓红
Owner HUBEI UNIV
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