Device for measuring and adjusting concentration of slurry solution

A technology of concentration measurement and adjustment device, applied in measurement device, sampling device, control/adjustment system, etc., can solve the problems of undetermined slurry concentration, singleness, hydrogen peroxide concentration measurement error, etc.

Inactive Publication Date: 2019-02-05
SEMIROAD
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Specifically, the measurement method of the slurry solution used in the field of the semiconductor industry so far has only used a single ultrasonic principle to measure the concentration of hydrogen peroxide in the slurry solution.
However, when the concentration of hydrogen peroxide in the slurry solution is measured only by the principle of ultrasonic waves, the concentration of the slurry affects the concentration measurement of hydrogen peroxide.
In other words, even if the concentration of hydrogen peroxide remains constant, if the concentration of the slurry changes, an error will occur in the measurement of the concentration of hydrogen peroxide.
In addition, the measurement method of the slurry solution used in the field of the semiconductor industry so far has not measured the concentration of the slurry in the slurry solution

Method used

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  • Device for measuring and adjusting concentration of slurry solution
  • Device for measuring and adjusting concentration of slurry solution
  • Device for measuring and adjusting concentration of slurry solution

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Experimental program
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Effect test

no. 1 approach

[0036] The slurry solution mainly used in the semiconductor CMP process contains two kinds of hydrogen peroxide and slurry. Hydrogen peroxide is primarily chemically reactive and cleansing. The slurry acts as a physical (mechanical) abrasive. The concentration of hydrogen peroxide in the slurry solution and the concentration of the slurry vary corresponding to the film on which the CMP process is performed. Especially in the case of slurry, not only the concentration of the slurry but also the kind of the slurry varies according to the CMP process. In this way, the concentration of hydrogen peroxide in the slurry solution used in CMP, the concentration of the slurry, and the type of the slurry vary.

[0037] figure 1 It is a schematic diagram of a CMP process system to which a concentration measurement and adjustment device for a slurry solution according to an embodiment of the present invention is applied.

[0038] refer to figure 1 , the CMP process system to which the c...

no. 2 approach

[0132] image 3 It is a schematic diagram of a concentration measuring device for a slurry solution and a concentration measuring and adjusting device for a slurry solution to which the concentration measuring device is applied according to a second embodiment of the present invention.

[0133] refer to figure 1 and image 3, The concentration measurement device 80 of a slurry solution according to the second embodiment includes a sensor unit 51 , a concentration measurement unit 55 , and a display unit 58 . The sensor unit 51 includes a first sensor 52 that measures the conductivity of the solution, a second sensor 53 that measures the velocity of ultrasonic waves in the solution, and a third sensor 54 that measures the absorbance of the solution. The concentration measurement unit 55 analyzes the electrical conductivity, ultrasonic propagation velocity, and absorbance input from the sensor unit 51 to measure the concentration of hydrogen peroxide in the solution and the co...

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Abstract

A device for measuring the concentration of a slurry solution, according to an embodiment, comprises: a sensor unit including a first sensor for measuring conductivity of the solution, a second sensorfor measuring ultrasonic wave propagation velocity of the solution, and a third sensor for measuring light absorbance of the solution; and a concentration measurement unit for measuring the concentration of hydrogen peroxide and the concentration of slurry in the solution in real time by analyzing the conductivity, the ultrasonic wave propagation velocity, and the light absorbance inputted from the sensor unit.

Description

technical field [0001] The invention relates to a device for measuring and adjusting the concentration of slurry solution. Background technique [0002] With the miniaturization, high density, and multilayer structure of semiconductor devices, finer patterning techniques are used, and the surface structure of semiconductor devices becomes complicated, and the steps of each interlayer insulating film become larger. Therefore, as a planarization technique for removing steps on a specific film formed on a semiconductor substrate, there is typically a technique utilizing a chemical mechanical polishing (CMP) process. [0003] The CMP process refers to a method of flattening the surface of a wafer using a polishing pad and a slurry, and more specifically, is a method of bringing the polishing pad into contact with the wafer and implementing an orbital motion that mixes rotation and linear motion to the polishing pad and the wafer and A grinding process using a slurry containing ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N21/31G01N29/22G01N29/44G01N1/10
CPCG01N21/33G01N21/85G01N2021/8416G01N2291/02809G01N29/024G01N29/222G05D21/02G01N21/31G01N27/12G05D11/138
Inventor 金泓成
Owner SEMIROAD
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