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A 4h-sic ultraviolet detector with high responsivity and low dark current pin structure and preparation method thereof

A UV detector and responsivity technology, applied in circuits, electrical components, semiconductor devices, etc., can solve the problems of low responsivity, high dark current, poor long-term reliability, etc., and achieve the effect of improving responsivity and low dark current

Active Publication Date: 2021-04-23
NANJING UNIV
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Problems solved by technology

[0006] The invention provides a 4H-SiC ultraviolet detector with a high-responsivity and low-dark-current PIN structure and a preparation method thereof, aiming to solve the problems of low responsivity, high dark current and long-term The disadvantage of poor reliability, and the problem of low responsivity when the PN / PIN structure UV detector works at low voltage

Method used

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  • A 4h-sic ultraviolet detector with high responsivity and low dark current pin structure and preparation method thereof
  • A 4h-sic ultraviolet detector with high responsivity and low dark current pin structure and preparation method thereof
  • A 4h-sic ultraviolet detector with high responsivity and low dark current pin structure and preparation method thereof

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Embodiment 1

[0034] like figure 2 As shown, the 4H-SiC ultraviolet detector with high responsivity and low dark current PIN structure, the device is prepared on the n-type 4H-SiC substrate material, including from bottom to top: the lower metal contact electrode (n-type contact electrode ) 101, n-type 4H-SiC conductive substrate 102, n-type 4H-SiC ohmic contact layer 103, i-type 4H-SiC photon absorption layer 104, p-type 4H-SiC ohmic contact layer 105, oxygen plasma treatment of p-type 4H - SiC contact layer 108 , Ti / Al / Ti / Au alloyed p-type upper metal contact electrode 107 , passivation protection layer 106 . The mesa structure is a vertical mesa structure, and the mesa needs to be etched from the p-type 4H-SiC contact layer 105 on the surface to the n-type 4H-SiC ohmic contact layer 103 , and its bottom is on the n-type 4H-SiC conductive substrate 102 .

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Abstract

The invention discloses a 4H-SiC ultraviolet detector with a high responsivity and low dark current PIN structure and a preparation method thereof. An oxygen plasma-treated 4H-SiC ohmic contact layer is provided between the 4H-SiC ohmic contact layers. The upper electrode is a Ti single-layer metal or a Ti-containing multi-layer metal composite structure. The 4H-SiC ultraviolet detector with high responsivity and low dark current PIN structure of the present invention overcomes the shortcoming of low responsivity of the traditional PIN structure 4H-SiC ultraviolet detector, and does not increase the difficulty of epitaxial technology of the device, the complexity of device preparation and the cost. Under the premise, the sensitivity of the device can be effectively improved, and the dark current level can be kept extremely low.

Description

technical field [0001] The invention relates to a 4H-SiC ultraviolet detector with a high responsivity and low dark current PIN structure and a preparation method thereof, belonging to the technical field of semiconductor optoelectronic devices. Background technique [0002] Ultraviolet detection technology is a new detection technology after infrared detection technology and laser detection technology. Ultraviolet (UV) detection has important applications in many fields such as military, civil, industrial and scientific research, such as missile tail feather monitoring and early warning, non-visible distance ultraviolet communication, short-range ultraviolet laser radar, high-voltage arc discharge, flame detection, UV curing, UV sterilization, astrophysics research, biotechnology and material science research and many other military, industrial, civilian and scientific fields. [0003] Common photodetector structures include: metal-semiconductor-metal (MSM) structure, Scho...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0224H01L31/105H01L31/20
CPCH01L31/022408H01L31/1055H01L31/204Y02P70/50
Inventor 周东陆海苏琳琳徐尉宗
Owner NANJING UNIV
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