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A method of manufacturing a flip-chip light-emitting diode chip

A technology of light-emitting diodes and manufacturing methods, which is applied to semiconductor devices, electrical components, circuits, etc., can solve problems affecting the reliability of flip-chip LED chips, and achieve the effects of avoiding abnormal chip functions, avoiding electrochemical reactions, and improving contact effects

Active Publication Date: 2020-03-27
HC SEMITEK ZHEJIANG CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0008] The embodiment of the present invention provides a method for manufacturing a flip-chip light-emitting diode chip and a flip-chip light-emitting diode chip, which can solve the problem that the solution pollutants and natural oxide layers formed on the electrode surface in the prior art affect the contact with the pad and affect the flip-chip LED. The problem of chip reliability

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  • A method of manufacturing a flip-chip light-emitting diode chip
  • A method of manufacturing a flip-chip light-emitting diode chip
  • A method of manufacturing a flip-chip light-emitting diode chip

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Embodiment Construction

[0047] In order to make the object, technical solution and advantages of the present invention clearer, the implementation manner of the present invention will be further described in detail below in conjunction with the accompanying drawings.

[0048] An embodiment of the present invention provides a method for manufacturing a flip-chip light-emitting diode chip. figure 1 It is a flow chart of a method for manufacturing a flip-chip light-emitting diode chip provided by an embodiment of the present invention. see figure 1 , the production method includes:

[0049] Step 101: providing a substrate, and sequentially growing an N-type semiconductor layer, an active layer and a P-type semiconductor layer on the substrate.

[0050] figure 2 A structural schematic diagram of a flip-chip light-emitting diode chip obtained after performing step 101 in the manufacturing method provided by the embodiment of the present invention, image 3 Provided for the embodiment of the present i...

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Abstract

The invention discloses a manufacturing method of a flip light-emitting-diode (LED) chip, and belongs to the technical field of semiconductors. The method includes: sequentially growing an N-type semiconductor layer, an active layer and a P-type semiconductor layer on a substrate; forming a groove extending to the N-type semiconductor layer; forming an N-type electrode on the N-type semiconductorlayer, and forming a P-type electrode on the P-type semiconductor layer, wherein top materials are all alloys of titanium, tungsten and gold; forming an reflective layer on a region other than an arrangement region of the N-type electrode on the N-type semiconductor layer and a region other than an arrangement region of the P-type semiconductor on the P-type semiconductor layer; forming an insulating layer on the reflective layer; carrying out physical bombardment on the top of the N-type electrode and the top of the P-type electrode in a vacuum environment to remove contaminants; and formingan N-type pad and a P-type pad, wherein the N-type pad and the P-type pad are arranged in a spaced manner, and a formation rate of a starting portion is greater than a formation rate of a subsequent portion. The method can improve chip stability.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for manufacturing a flip-chip light-emitting diode chip. Background technique [0002] A light-emitting diode (English: Light Emitting Diode, referred to as: LED) is a semiconductor electronic component that can emit light. Since gallium nitride (GaN)-based LEDs were successfully developed by Japanese scientists in the 1990s, with the continuous advancement of process technology, the luminous brightness of LEDs has continued to increase. As a new-generation solid-state lighting source with high efficiency, environmental protection and green, LED has the advantages of low voltage, low power consumption, small size, light weight, long life and high reliability, and is rapidly and widely used in traffic lights, automotive interior and exterior lights, Urban landscape lighting, mobile phone backlight, outdoor full-color display and other fields. Especially in the fi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01L33/20H01L33/38H01L33/62
CPCH01L33/005H01L33/20H01L33/38H01L33/62
Inventor 兰叶顾小云
Owner HC SEMITEK ZHEJIANG CO LTD
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