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Preparation method and application of nanometer metal oxide film

A technology of oxide film and nano-metal, which is applied in the direction of chromium oxide/hydrate, chemical instruments and methods, vanadium oxide, etc., can solve the problems of low efficiency of QLED devices, high cost of nano-particle oxides, unsuitable for industrial production, etc. Achieve the effects of improving hole injection efficiency, improving construction and large-scale development, and reducing activation energy

Active Publication Date: 2021-03-16
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The purpose of the present invention is to provide a preparation method and application of a nano-metal oxide film, aiming at solving the low efficiency of existing QLED devices, and the cost of nano-particle oxide used as a hole transport layer is high and not suitable for industrial production The problem

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  • Preparation method and application of nanometer metal oxide film

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preparation example Construction

[0015] The embodiment of the present invention provides a method for preparing a nanometer metal oxide film, comprising the following steps:

[0016] S01. Metal powder is provided, and the metal powder is added to the reaction medium to form a dispersion;

[0017] S02. Adding an oxidizing agent to the dispersion to react to prepare a precursor solution, wherein the standard electrode potential of the oxidizing agent is >+1.23V;

[0018] S03. Depositing the precursor solution on the substrate, and annealing to obtain a nanometer metal oxide film.

[0019] In the embodiment of the present invention, to prepare a nanometer metal oxide thin film, the metal powder is first dispersed in a reaction medium, and an oxidizing agent is added to the dispersion to prepare a precursor solution; then, a nanometer metal oxide is prepared by low-temperature annealing. First of all, the method for preparing nanometer metal oxide films in the embodiment of the present invention is simple, the r...

Embodiment 1

[0049] A preparation method for a nanometer metal oxide film, comprising the following steps:

[0050] Add molybdenum powder into ethanol to form a dispersion liquid with a molybdenum powder concentration of 1-3 mol / L. After fully stirring, add 0.2-1 ml of hydrogen peroxide (30%) to 10-20 ml of the dispersion liquid, and stir for 6-24 hours to form a precursor solution. The precursor solution was dropped onto the ITO substrate, spin-coated and then annealed at low temperature to form a film.

Embodiment 2

[0052] A preparation method for a nanometer metal oxide film, comprising the following steps:

[0053] Add tungsten powder into isopropanol to form a dispersion with a concentration of tungsten powder of 1-3 mol / L. After fully stirring, add 0.2ml-2ml sodium peroxide (1mol / L) to 10-20ml of the dispersion liquid, and stir for 6h-24h to form a precursor solution. The precursor solution was dropped onto the ITO substrate, spin-coated and then annealed at low temperature to form a film.

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Abstract

The invention provides a method for preparing a nanometer metal oxide film, comprising the following steps: providing metal powder, adding the metal powder into a reaction medium to form a dispersion liquid; adding an oxidizing agent to the dispersion liquid, and reacting to prepare a precursor A precursor solution, wherein the standard electrode potential of the oxidizer is >+1.23V; the precursor solution is deposited on a substrate, and annealed to obtain a nanometer metal oxide film.

Description

technical field [0001] The invention belongs to the technical field of QLED, and in particular relates to a preparation method and application of a nanometer metal oxide thin film. Background technique [0002] Quantum dot light-emitting diode (QLED) has the advantages of self-illumination, low energy consumption, and high color purity, and has become the next-generation lighting and display technology that people are most concerned about. However, the efficiency and lifetime of QLED devices hinder the pace of QLED industrialization. Therefore, the research on QLED is still in the laboratory stage. The low efficiency of QLED devices is mainly due to the poor injection and transport efficiency of holes, resulting in the unbalanced transport of carriers. On the other hand, current QLED devices basically use ITO as the device electrode, but at the same time PEDOT:PSS is also widely used as a hole transport material due to its high conductivity. However, due to the acidity and...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01G55/00C01G47/00C01G41/02C01G39/02C01G37/02C01G31/02C01G3/02C01G1/02H01L51/50B82Y30/00
CPCB82Y30/00C01G1/02C01G3/02C01G31/02C01G37/02C01G39/02C01G41/02C01G47/00C01G55/004H10K50/17
Inventor 何斯纳吴龙佳吴劲衡
Owner TCL CORPORATION