An ultra-dense cu(oh) 2 Preparation method and product of nanowire

A nanowire, C6H12N4 technology, applied in the field of preparation of ultra-dense Cu2 nanowires, can solve the problems of low contact points, long growth time, and influence on nanostructure performance, and achieve large specific surface area, high quality, and rich capillary channels Effect

Active Publication Date: 2020-02-21
HUAZHONG UNIV OF SCI & TECH
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Problems solved by technology

For sensors, the sparseness of nanostructures has a significant impact on their performance. The contact sites between sparse micro-nano composite structures and target gas molecules are relatively low, and the prepared sensors do not respond quickly enough.
On the other hand, the prior art prepares Cu(OH) 2 When using nanowires, it is difficult to control the growth rate and quality, so that the growth time is long, and the quality of the obtained nanowires is not high

Method used

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  • An ultra-dense cu(oh) <sub>2</sub> Preparation method and product of nanowire
  • An ultra-dense cu(oh) <sub>2</sub> Preparation method and product of nanowire
  • An ultra-dense cu(oh) <sub>2</sub> Preparation method and product of nanowire

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preparation example Construction

[0034] Embodiments of the present invention provide an ultra-dense Cu(OH) 2 A method for preparing nanowires, comprising the steps of:

[0035] (1) Preparation of the catalytic layer: a layer of ZnO seed layer with a thickness of ZnO is deposited on the substrate by magnetron sputtering, and then the substrate deposited with the ZnO seed layer is placed on Zn(NO 3 ) 2 6(H 2 O) and C 6 h 12 N 4 The mixed solution is used to grow ZnO nanorod catalytic layer, in which, Zn(NO 3 ) 2 6(H 2 O) and C 6 h 12 N 4 The molar mass concentration ratio is 1:5~5:1, the growth time is 10~60min, the sample is tilted upside down in the solution, and the solution temperature is room temperature;

[0036] (2 Preparation of seed layer: Deposit a Cu seed layer with a thickness of 0.025 μm to 1 μm on the substrate by magnetron sputtering for subsequent growth of superhydrophilic nanowires. Among them, the seed layer ZnO can only be used in radio frequency mode Sputtering is carried out, a...

Embodiment 1

[0041] A kind of ultra-dense Cu(OH) of the present embodiment 2 The preparation method of nanowire, the concrete steps of this method are as follows:

[0042] (1) Preparation of ZnO seed layer

[0043] A ZnO seed layer is deposited on the substrate 1 by sputtering, and a ZnO seed layer 2 with a thickness of 1 μm is deposited on the upper surface of the substrate by radio frequency magnetron sputtering with a power of 50 W and a vacuum of 0.1 Pa.

[0044] (2) Preparation of ZnO nanorods

[0045] Then in Zn(NO 3 ) 2 6(H 2 O) and C 6 h 12 N 4 ZnO nanorods were grown in mixed growth solution, Zn(NO 3 ) 2 6(H 2 O) and C 6 h 12 N 4 The molar mass concentration ratio is 5:1 to grow ZnO nanorods on the ZnO seed layer.

[0046] Such as figure 2 As shown, the scanning electron microscope (SEM) characterization diagram of the obtained ultra-dense super-hydrophilic ZnO nanorods.

[0047] (3) Preparation of Cu seed layer

[0048] Continue to deposit a Cu seed layer by spu...

Embodiment 2

[0053] A kind of ultra-dense Cu(OH) of the present embodiment 2 The preparation method of nanowire, the concrete steps of this method are as follows:

[0054] (1) Preparation of ZnO seed layer

[0055] A ZnO seed layer was deposited on the substrate 1 by sputtering, and a ZnO seed layer 2 with a thickness of 15 μm was deposited on the upper surface of the substrate by radio frequency magnetron sputtering with a power of 200 W and a vacuum of 0.1 Pa.

[0056] (2) Preparation of ZnO nanorods

[0057] Then in Zn(NO 3 ) 2 6(H 2 O) and C 6 h 12 N 4 ZnO nanorods were grown in mixed growth solution, Zn(NO 3 ) 2 6(H 2 O) and C 6 h 12 N 4 The molar mass concentration ratio is 1:1 to grow ZnO nanorods on the ZnO seed layer.

[0058] Such as Figure 4 As shown, the scanning electron microscope (SEM) characterization diagram of the obtained ultra-dense super-hydrophilic ZnO nanorods.

[0059] (3) Preparation of Cu seed layer

[0060] Continue to deposit a Cu seed layer by...

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Abstract

The invention belongs to the technical field of micro-nano manufacturing, and discloses a preparation method of a super-dense Cu(OH)2 nanowire and a product. The method comprises the following steps:S1, preparation of a ZnO seed layer: depositing a layer of ZnO film on a substrate; S2, preparation of a ZnO catalytic nanorod: placing the substrate on which the ZnO is deposited in a mixed growth solution of Zn(NO3)2.6(H2O) and C6H12N4; S3, preparation of a Cu seed layer: depositing a Cu seed layer on the surface of the ZnO catalytic nanorod; S4, growth of a nanowire: placing the substrate on which the Cu seed layer is deposited in a mixed solution of NaOH and (NH4)2S2O8 in order to grow the super-dense CU(OH)2 nanowire. The invention further discloses the super-dense Cu(OH)2 nanowire. The appearance of the Cu(OH)2 nanowire prepared by the method has the characteristics of higher quality, higher density, and large specific surface area.

Description

technical field [0001] The invention belongs to the technical field of humidity sensors, and more specifically relates to an ultra-dense Cu(OH) 2 Preparation methods and products of nanowires. Background technique [0002] Micro-nano technology is one of the rapidly developing high-tech in the world today, and it is also an important symbol of the development of contemporary science. Together with communication technology and computer technology, it constitutes the three pillars of the information industry. MEMS technology is a cutting-edge technology in the 21st century based on micro / nano, and refers to the technology for designing, processing, manufacturing, measuring and controlling micro / nano materials. MEMS is developed with the development of semiconductor integrated circuit micro-processing technology and ultra-precision machining technology. At present, MEMS processing technology is also widely used in the fields of microfluidic chips and synthetic biology, so as t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/35C23C14/08C23C14/18C23C18/12C23C28/00G01N33/00B82Y40/00
CPCB82Y40/00C23C14/086C23C14/185C23C14/35C23C18/1204C23C18/1216C23C18/1225C23C28/322C23C28/345G01N33/0036
Inventor 廖广兰林建斌谭先华方涵史铁林汤自荣
Owner HUAZHONG UNIV OF SCI & TECH
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