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GaN thin film-based miniature flexible ultraviolet detector and fabrication method thereof

A technology of ultraviolet detector and gallium nitride, which is applied in the direction of semiconductor devices, climate sustainability, and final product manufacturing, etc., can solve the problems of inability to achieve flexibility, preparation materials and substrates that are difficult to bend, and achieve flexibility , reduce dislocation and relieve stress

Inactive Publication Date: 2019-03-01
SUZHOU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the traditional gallium nitride-based ultraviolet detection device is difficult to bend its preparation materials and substrates, and cannot achieve flexibility.

Method used

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  • GaN thin film-based miniature flexible ultraviolet detector and fabrication method thereof
  • GaN thin film-based miniature flexible ultraviolet detector and fabrication method thereof
  • GaN thin film-based miniature flexible ultraviolet detector and fabrication method thereof

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Embodiment 1

[0024] See attached figure 1 , which is a schematic diagram of the structure of a gallium nitride film grown on a graphene / dielectric material provided in this embodiment, a graphene intercalation layer 2 is grown on a dielectric material 1 to obtain a graphene / dielectric material composite substrate, and on the composite substrate To re-grow gallium nitride thin film 3, the specific preparation steps are as follows:

[0025] Step 1, preparing a graphene / dielectric material composite substrate. The dielectric material 1 provided in this embodiment is silicon carbide, and a multi-layer step-structured graphene insertion layer 2 is grown on its surface by high-temperature thermal sublimation. The specific steps are as follows : Hydrogen gas is introduced at a high temperature of 1575°C, silicon atoms on the surface of silicon carbide escape under hydrogen etching, leaving carbon atoms to restructure to form graphene, and a graphene / silicon carbide composite substrate is obtained...

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Abstract

The invention discloses a GaN thin film-based miniature flexible ultraviolet detector and a fabrication method thereof. A wafer-scale and low-stress GaN thin film is directly grown on a graphene / dielectric material used as a composite substrate by a metal organic chemical vapor deposition method, a GaN thin film which can be integrally transferred can be obtained on the substrate by mechanical stripping, a metal electrode is fabricated by a mask, and the GaN thin film is transferred to a flexible substrate to fabricate the flexible ultraviolet detector and achieve ultraviolet detection. With the GaN thin film-based miniature flexible ultraviolet detector and the fabrication method thereof, provided by the technical scheme, the cutting method is rapid, the low-cost GaN-based miniature ultraviolet detector can be produced on a large scale. The typical size of the miniature flexible ultraviolet detector provided by the invention is 0.01-100 mm<2>, meanwhile, the miniature flexible ultraviolet detector has relatively high sensitivity and can be applied to miniature and wearable ultraviolet detection equipment, and working in a complicated field environment is supported.

Description

technical field [0001] The invention relates to a gallium nitride ultraviolet detector technology, in particular to a gallium nitride thin-film-based miniature flexible ultraviolet response detector and a preparation method thereof, belonging to the technical field of semiconductor materials. Background technique [0002] Gallium nitride semiconductor material has direct band gap, large band gap, high breakdown electric field, high thermal conductivity, high electron saturation rate and high radiation resistance, etc. It is the core material for the application of new generation power electronics, mobile communication and optoelectronic devices and key components. [0003] Compared with silicon UV detectors, GaN-based UV detectors have high quantum efficiency and can operate at high temperatures and harsh working environments. It has the advantages of high sensitivity and strong anti-interference ability. In recent years, flexible wearable devices have attracted extensive ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/028H01L31/0304H01L31/18
CPCH01L31/028H01L31/03044H01L31/1856Y02P70/50
Inventor 曹冰刘伊王钦华李宗尧
Owner SUZHOU UNIV
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