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A nitride memristor embedded with phase-change nanoparticles and its preparation method

A nanoparticle and nitride technology, applied in the direction of nanotechnology, nanotechnology, nanotechnology for information processing, etc., can solve the problems of unclear working medium, unclear mechanism, and very different working modes

Active Publication Date: 2020-04-24
TSINGHUA UNIV
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Problems solved by technology

However, these devices are far from the properties of real biological synapses. For example, the working medium and mechanism are not clear, and the working mode is still far from the real synapses.

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  • A nitride memristor embedded with phase-change nanoparticles and its preparation method
  • A nitride memristor embedded with phase-change nanoparticles and its preparation method
  • A nitride memristor embedded with phase-change nanoparticles and its preparation method

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[0044] The present invention also proposes a method for preparing the above-mentioned memristor, comprising the following steps:

[0045] 1) Deposit a layer of inert metal (including Au, Pt or Pd) on any substrate (preferably an insulating substrate) by electron beam evaporation, thermal evaporation, magnetron sputtering or ion sputtering to form the bottom electrode ;

[0046] 2) Depositing the nitride or oxynitride film on the top surface of the formed bottom electrode by magnetron sputtering, ion sputtering, chemical vapor deposition or atomic layer deposition, using a deposition rate of a; While depositing the nitride or oxynitride film, any one of the following transition metal elements is deposited by magnetron sputtering, ion sputtering, chemical vapor deposition or atomic layer deposition, including vanadium, chromium, tantalum, molybdenum, For yttrium, hafnium, tungsten and niobium, the deposition rate adopted is b; by adjusting the relative size of a and b, the tran...

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Abstract

The invention discloses a nitride memristor inlaid with phase-change nanoparticles and a preparation method thereof. The memristor comprises a bottom electrode, a dielectric layer and a top electrode arranged in sequence, and the dielectric layer is a doped substance arranged on one side of the bottom electrode. Nitride or oxynitride films with transition metals. The preparation method includes the following steps: depositing an inert metal on the substrate as a bottom electrode; depositing a layer of nitride or oxynitride film on the bottom electrode, and simultaneously depositing a small amount of transition metal into the nitride or oxynitride film; Add a mask plate on the mask plate, deposit an inert metal on the mask plate as the top electrode and remove the mask plate; use a negative bias voltage between the top electrode and the bottom electrode, so that the phase that penetrates the dielectric layer and gathers into bundles is formed in the dielectric layer. into nanoparticles. The memristor has a coding function under the action of a periodic strong input pulse, and has a memory and learning function after the strong input pulse is over, and can well simulate the calculation and learning functions of nerve synapses.

Description

technical field [0001] The invention relates to a nitride memristor inlaid with phase-change nanoparticles and a preparation method thereof, belonging to the technical field of information electronic materials. Background technique [0002] Using memristors to simulate synaptic plasticity and realizing brain-like computing is a common concern of scientists and engineers in the fields of information, materials, computers, and neuroscience. Many memristors have been invented, such as various metal oxides, which can simulate synaptic plasticity and learning functions. However, these devices are far from the properties of real biological synapses. For example, the working medium and mechanism are not clear, and the working mode is still far from real synapses. For example, the phase-change memristor reported and widely cited on Nano Letters (Kuzum, D., Jeyasingh, R.G.D., Lee, B. & Wong, H.S.P. Nanoelectronic programmable synapses based on phase change materials for brain-inspir...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L45/00B82Y10/00B82Y30/00
CPCB82Y10/00B82Y30/00H10N70/231H10N70/883H10N70/011
Inventor 曾飞万钦
Owner TSINGHUA UNIV
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