Phase-changing nanoparticle-embedded nitride memristor and fabrication method thereof

A nanoparticle and nitride technology, applied in the direction of nanotechnology, nanotechnology, nanotechnology for information processing, etc., can solve problems such as unclear mechanism, unclear working medium, and far different working modes

Active Publication Date: 2019-03-08
TSINGHUA UNIV
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  • Abstract
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Problems solved by technology

However, these devices are far from the properties of real biological synapses. For example, the working medium and mechanism are not clear, and the working mode is still far from the real synapses.

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  • Phase-changing nanoparticle-embedded nitride memristor and fabrication method thereof
  • Phase-changing nanoparticle-embedded nitride memristor and fabrication method thereof
  • Phase-changing nanoparticle-embedded nitride memristor and fabrication method thereof

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[0044] The present invention also proposes a method for preparing the above-mentioned memristor, comprising the following steps:

[0045] 1) Deposit a layer of inert metal (including Au, Pt or Pd) on any substrate (preferably an insulating substrate) by electron beam evaporation, thermal evaporation, magnetron sputtering or ion sputtering to form the bottom electrode ;

[0046] 2) Depositing the nitride or oxynitride film on the top surface of the formed bottom electrode by magnetron sputtering, ion sputtering, chemical vapor deposition or atomic layer deposition, using a deposition rate of a; While depositing the nitride or oxynitride film, any one of the following transition metal elements is deposited by magnetron sputtering, ion sputtering, chemical vapor deposition or atomic layer deposition, including vanadium, chromium, tantalum, molybdenum, For yttrium, hafnium, tungsten and niobium, the deposition rate adopted is b; by adjusting the relative size of a and b, the tran...

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Abstract

The invention discloses a phase-changing nanoparticle-embedded nitride memristor and a fabrication method thereof. The memristor comprises a bottom electrode, a dielectric layer and a top electrode which are sequentially arranged, wherein the dielectric layer is a nitride or nitrogen oxide thin film, and the nitride or nitrogen oxide thin film is arranged on a surface of the bottom electrode and is doped with transition metal. The fabrication method comprises the following steps of depositing inert metal on a substrate as the bottom electrode; depositing a layer of nitride or nitrogen oxide thin film on the bottom electrode, and simultaneously depositing a few amount of transition metal into the nitride or nitrogen oxide thin film; adding a mask plate onto the dielectric layer, and depositing the inert metal on the mask plate as the top electrode, and then removing the mask plate; and employing negative bias between the top electrode and the bottom electrode so that phase-changing nanoparticle is formed in the dielectric layer, penetrates through the dielectric layer and is gathered to form beams. The memristor has a coding function under a periodic and strong input pulse effect and has functions of memory and learning after the strong input pulse is ended, and the calculation and learning function of synapse can be simulated very well.

Description

technical field [0001] The invention relates to a nitride memristor inlaid with phase-change nanoparticles and a preparation method thereof, belonging to the technical field of information electronic materials. Background technique [0002] Using memristors to simulate synaptic plasticity and realizing brain-like computing is a common concern of scientists and engineers in the fields of information, materials, computers, and neuroscience. Many memristors have been invented, such as various metal oxides, which can simulate synaptic plasticity and learning functions. However, these devices are far from the properties of real biological synapses. For example, the working medium and mechanism are not clear, and the working mode is still far from real synapses. For example, the phase-change memristor reported and widely cited on Nano Letters (Kuzum, D., Jeyasingh, R.G.D., Lee, B. & Wong, H.S.P. Nanoelectronic programmable synapses based on phase change materials for brain-inspir...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00B82Y10/00B82Y30/00
CPCB82Y10/00B82Y30/00H10N70/231H10N70/883H10N70/011
Inventor 曾飞万钦
Owner TSINGHUA UNIV
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