Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Perovskite thin film and preparation method thereof, and applications

A technology of perovskite and perovskite precursors, which can be used in semiconductor/solid-state device manufacturing, electrical components, electrical solid-state devices, etc., can solve the problems of low performance of light-emitting devices, small cesium ion radius, and small exciton binding energy. , to achieve the effect of improving coverage and regularity, promoting grain size, and simple method

Active Publication Date: 2019-03-08
SOUTH CHINA UNIV OF TECH
View PDF5 Cites 12 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In terms of red light, there are mainly two types of perovskite materials at this stage, one is organic-inorganic hybrid perovskite materials, namely APbI 3 (A=CH 3 NH 3 , HC(NH 2 ) 2 ) type materials, due to the faster grain production, larger size, smaller exciton binding energy, and low exciton radiative recombination efficiency in the one-step spin coating process, resulting in lower performance of light-emitting devices
Another class of all-inorganic perovskite materials (CsPbI 3 ) has good thermal stability, but the radius of cesium ions is small, the perovskite lattice tolerance factor deviates from 1, and the crystal packing is incomplete, which leads to a decrease in the transient lifetime of the excitons of the light-emitting device and reduces the performance of the light-emitting device

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Perovskite thin film and preparation method thereof, and applications
  • Perovskite thin film and preparation method thereof, and applications
  • Perovskite thin film and preparation method thereof, and applications

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0047] A kind of preparation method of perovskite film, comprises the following steps:

[0048] (1) Add 0.3mmol (138.3mg) lead iodide to 1mL dimethylformamide (DMF) solvent, heat 50°C in the glove box to dissolve lead iodide, and prepare 0.3mmol / mL lead iodide ( PB 2 ) solution;

[0049] (2) Add 0.2835mmol (73.65mg) cesium iodide (CsI) and 0.0315mmol (8.974mg) 1-naphthylmethylammonium iodide (NMAI) into the lead iodide solution, stir at 50°C for 12h to obtain NMAI doped Mixed perovskite precursor solution;

[0050] (3) Add 12 mg of polyethylene oxide into 2 mL of dimethylformamide solvent, heat in a glove box at 50°C to dissolve the polyethylene oxide, and prepare a 6 mg / mL polyethylene oxide solution;

[0051] (4) Mix the NMAI-doped perovskite precursor solution and the polyethylene oxide solution in equal volumes, and stir at 50° C. for 2 hours to obtain a mixed solution;

[0052] (5) Perform one-step spin coating of the mixed solution, the speed of the homogenizer is 60...

Embodiment 2

[0055] A kind of preparation method of perovskite film, comprises the following steps:

[0056] (1) Take 0.3mmol (138.3mg) of lead iodide in 1mL of dimethylformamide (DMF) solvent, heat in a glove box at 50°C to dissolve lead iodide, and prepare a 0.3mmol / mL lead iodide solution ;

[0057] (2) Add 0.2520mmol (65.47mg) cesium iodide (CsI) and 0.063mmol (17.95mg) 1-naphthylmethylammonium iodide (NMAI) to the lead iodide solution, stir overnight at 50°C (12h) , to obtain NMAI-doped perovskite precursor solution;

[0058] (3) Put 12mg of polyethylene oxide in 2mL of dimethylformamide solvent, heat 50°C in the glove box to dissolve the polyethylene oxide, and prepare a 6mg / mL polyethylene oxide solution;

[0059] (4) Mix the NMAI-doped perovskite precursor solution and the polyethylene oxide solution in equal volumes, and stir at 50° C. for 2 hours to obtain a mixed solution;

[0060] (5) Perform one-step spin coating of the mixed solution, the speed of the homogenizer is 6000rp...

Embodiment 3

[0063] A kind of preparation method of perovskite film, comprises the following steps:

[0064] (1) Take 0.3mmol (138.3mg) of lead iodide in 1mL of dimethylformamide (DMF) solvent, heat in a glove box at 50°C to dissolve lead iodide, and prepare a 0.3mmol / mL lead iodide solution ;

[0065] (2) 0.2394mmol (62.20mg) cesium iodide (CsI), 0.0599mmol (10.29mg) formamidine hydroiodide (FAI), 0.0158mmol (4.487mg) 1-naphthylmethylammonium iodide (NMAI) And adding it to the lead iodide solution, stirring overnight (12h) at 50°C to obtain a NMAI-doped perovskite precursor solution;

[0066] (3) Put 12mg of polyethylene oxide in 2mL of dimethylformamide solvent, heat 50°C in the glove box to dissolve the polyethylene oxide, and prepare a 6mg / mL polyethylene oxide solution;

[0067] (4) Mix the NMAI-doped perovskite precursor solution and the polyethylene oxide solution in equal volumes, and stir at 50° C. for 2 hours to obtain a mixed solution;

[0068] (5) Perform one-step spin coati...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention discloses a perovskite thin film and a preparation method thereof, and applications, pertaining to the technical field of perovskite. The method comprises the following steps: (1) making PbI2 into a solution by adopting an organic solvent, and obtaining a PbI2 solution; (2) adding cesium iodide, formamidine hydriodate and 1-naphthyl methyl ammonium iodide into the PbI2 solution, stirring, and obtaining a perovskite precursor solution; (3) making polyethylene oxide into the solution by using the organic solvent, and obtaining a polyethylene oxide solution; and (4) mixing the perovskite precursor solution and the polyethylene oxide solution, forming film(s), and obtaining the perovskite thin film(s). The method is simple, the prepared perovskite thin film has the advantages of more perovskite alpha phase(s), small crystal grain size and relatively high thin film coverage rate and regularity, and the perovskite thin film has excellent optical properties in light-emitting devices. The perovskite thin film is used for the light-emitting devices.

Description

technical field [0001] The invention belongs to the technical field of perovskite, and in particular relates to a perovskite thin film, a preparation method thereof and an application in light-emitting devices. Background technique [0002] In recent years, perovskite has achieved good results in the field of solar cells, and the power conversion efficiency (PCE) has exceeded 22%. The perovskite material can adjust the energy gap of perovskite by adjusting the ratio of halogen, and then The emitted light of different wavelengths is obtained, and the color purity of these emitted lights is high, and the half-peak width of electroluminescence is narrow, and its research on light-emitting devices is also a hot research field. Among them, the preparation of perovskite thin films is the most critical. In the process of preparing perovskite thin films, the one-step spin coating method is widely used by researchers because of its simplicity and easy operation. [0003] In terms of...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/56H01L51/54
CPCH10K71/12H10K85/30
Inventor 彭俊彪黄国辉谢淦澂邹建华王娟红江从彪麦超晃王坚曹镛
Owner SOUTH CHINA UNIV OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com