Dielectric resonant antenna based nmosfet terahertz detector and method

Abstract

The present disclosure discloses a dielectric resonant antenna based NMOSFET terahertz detector, comprising an on-chip dielectric resonant terahertz antenna, wherein the on-chip dielectric resonant terahertz antenna is connected to a matching network, the matching network is connected to a source of an NMOSFET, and a gate of the NMOSFET is sequentially connected to a first bias resistor and a first bias voltage, a third transmission line is connected between the first bias resistor and the gate, a drain of the NMOSFET is connected to a first DC blocking capacitor, the other end of the first DC blocking capacitor is connected to a low noise preamplifier, a second bias resistor and a second bias voltage are connected in parallel between the first DC blocking capacitor and the low noise preamplifier, and the low noise preamplifier is further provided with a voltage feedback loop. The present disclosure also discloses a design method for the same.

Description

technical field [0001] The invention relates to the field of terahertz technology, in particular to an NMOSFET terahertz detector and method based on a dielectric resonant antenna. Background technique [0002] Terahertz (Terahertz, THz) usually refers to electromagnetic waves with a frequency of 0.1-10THz (wavelength 0.03-3mm), and its long-wave band overlaps with millimeter waves (submillimeter waves). The short-wave band overlaps with the infrared, and its development mainly relies on photonics science and technology. It can be seen that the terahertz wave is the frequency band for the transition from macro-electronics to micro-photonics, so it occupies a special position in the electromagnetic spectrum. However, for a long time due to the lack of effective Terahertz radiation generation and detection methods have led to insufficient research and application of electromagnetic waves in the terahertz frequency band, which is called the "terahertz gap (THz gap)" in the elec...

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Problems solved by technology

[0002] Terahertz (Terahertz, THz) usually refers to electromagnetic waves with a frequency of 0.1-10THz (wavelength 0.03-3mm), and its long-wave band overlaps with millimeter waves (submillimeter waves). The short-wave band overlaps with the infrared, and its development mainly relies on photonics science and technology. It can be seen that the terahertz wave is the frequency band for the transition from macro-electronics to micro-photonics, so it occupies a special position in the electromagnetic spectrum. However, for a long time due to the lack of effective Terahertz radiation generation and detection methods, resulting in insufficient research and application of electromagnetic waves in the THz frequency band, so it is called the "THz gap" in the electromagnetic spectrum

[0003] In recent years, terahertz detection based on NMOSFET has been proved to be very feasible. However, due to the limitation of CMOS technology, the traditional on-chip dipole and patch terahertz antenna in the terahertz detector have a large loss, resulting in the traditional on-chip dipole The gain and radiation efficiency of terahertz antennas such as poles and patches are greatly reduced, which greatly affects the detection efficiency and detection sensitivity of NMOSFET terahertz detectors

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