Memristor with continuous variable conductivity, and preparation method and application thereof

A memristor and variable technology, applied in the field of microelectronics, can solve the problems of non-conformance, increase in device conductance, etc., and achieve the effects of economical practicability and simple preparation method

Active Publication Date: 2019-03-29
TSINGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The common problem in cation-transferring memristors is that the conductance of the device will suddenly increase at the moment when the conductive filaments are formed in the insulating dielectric layer, which is not in line with the idea that the conductance of memristors can change continuously with the applied electric field in brain-like simulations. Require

Method used

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  • Memristor with continuous variable conductivity, and preparation method and application thereof
  • Memristor with continuous variable conductivity, and preparation method and application thereof
  • Memristor with continuous variable conductivity, and preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] The silver / molybdenum disulfide / platinum planar structure memristor was prepared according to the following steps:

[0034] (1) The thin layer of molybdenum disulfide was peeled off from the molybdenum disulfide crystal with adhesive tape by mechanical stripping method and transferred to the thermal silicon oxide substrate, and deposited at 2.0×10 -6 mbar vacuum, 300°C annealing treatment, the annealing holding time is 1.5h;

[0035] (2) Preparation of active electrode silver with preset patterns: Find the thin layer of molybdenum disulfide under an optical microscope, and preset the shape of the active silver electrode on the thin layer of molybdenum disulfide by ultraviolet lithography, and then use magnetron sputtering method Deposit active electrode silver, and finally remove the glue and peel off to obtain active electrode silver;

[0036] (3) Prepare the inert electrode platinum with the preset pattern: at the position 200nm away from the active silver electrode,...

Embodiment 2

[0040] The silver / tungsten disulfide / platinum planar structure memristor is prepared according to the following steps:

[0041] (1) The thin layer of tungsten disulfide was peeled off from the tungsten disulfide crystal with adhesive tape by the mechanical stripping method and transferred to the thermal oxide substrate, and placed on a 2.0×10 -6 mbar vacuum, 300°C annealing treatment, the annealing holding time is 1.5h;

[0042] (2) Preparation of active electrode silver with preset patterns: Find the thin layer of tungsten disulfide under an optical microscope, and preset the shape of the active silver electrode on the thin layer of tungsten disulfide by ultraviolet lithography, and then use magnetron sputtering method Deposit active electrode silver, and finally remove the glue and peel off to obtain active electrode silver;

[0043] (3) Preparation of platinum inert electrode with preset pattern: At a position 380nm away from the active silver electrode, the shape of plati...

Embodiment 3

[0053] The silver / molybdenum disulfide / platinum planar structure memristor prepared in Example 1 is applied to the learning and memory behavior of simulated fruit flies, as shown in the attached Figure 7 shown;

[0054] Under electrical stimulation, Drosophila will generate memory for the stimulus pulse, and the process of Drosophila generating memory under electrical stimulation is called the learning behavior of Drosophila. attached Figure 7 a is the relationship between the memory level of Drosophila and the number and intensity of electrical pulses. It can be seen that the memory level of Drosophila increases significantly with the increase of the number and intensity of electrical pulses. attached Figure 7 b is the variation of the conductance of the silver / molybdenum disulfide / platinum planar structure memristor prepared in Example 1 with the number of electric pulses and the intensity of electric pulses. Contrast attached Figure 7 a and attached Figure 7 b It ...

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Abstract

The invention discloses a memristor with continuous variable conductivity and a preparation method and application thereof in the field of the micro-electronic technique. The memristor is specificallyformed in a manner that an active electrode and an inert electrode are formed on the surface of a two-dimensional atomic crystalline material at an interval, wherein the two-dimensional atomic crystalline material is a monocrystal two-dimensional atomic crystalline material with the semiconductor characteristics. A semi-insulating atomic-level smooth surface is provided with the migration of themetal cations of the active electrode in an electric field, thereby enabling the metal cations to migrate to form a conductive fine wire so as to achieve the continuous variable of the conductivity ofthe memristor. The method is simple, economical and feasible. The memristor can be applied to the simulation of the learning and memorizing behaviors of a fruit fly.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, in particular to a memristor with continuously variable conductance and its preparation method and application. Background technique [0002] In 1971, Professor Cai Shaotang predicted the existence of a fourth basic circuit element besides resistance, capacitance, and inductance based on the symmetry of the circuit, which represented the relationship between charge q and magnetic flux ψ, and named it a memristor. The resistance value of a memristor can change with the change of the current or voltage value flowing through it, that is, it has a memory function for the charge and magnetic flux flowing through the device. In 2008, Hewlett-Packard published its work in Nature, realizing the device preparation in line with the memristor theory for the first time. Since then, the research on memristor has ushered in a new upsurge of development. [0003] Cation transfer memristors are an impo...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00
CPCH10N70/841H10N70/011
Inventor 章晓中尹思琪熊成悦
Owner TSINGHUA UNIV
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