Method for rapidly preparing patterned doped graphene by ultraviolet laser

An ultraviolet laser and graphene technology, applied in graphene, nano-carbon and other directions, can solve the problems of low processing efficiency, cumbersome process, limited moving range, etc., and achieve the effect of high processing efficiency, high processing quality and high resolution

Active Publication Date: 2019-04-05
GUANGDONG UNIV OF TECH
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Problems solved by technology

The process of forming a polymethyl methacrylate film by this method is cumbersome, and the quality of the film affects the doping effect. The conductive needle of the atomic force microscope is difficult to operate, the moving range is extremely limited, and the processing efficiency is low.

Method used

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  • Method for rapidly preparing patterned doped graphene by ultraviolet laser
  • Method for rapidly preparing patterned doped graphene by ultraviolet laser
  • Method for rapidly preparing patterned doped graphene by ultraviolet laser

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Embodiment Construction

[0024] The technical solutions of the present invention will be further described below in conjunction with the accompanying drawings and through specific implementation methods.

[0025] Such as Figure 1-2 Shown, a kind of method for rapidly preparing patterned doped graphene by ultraviolet laser, it comprises the following steps:

[0026] a. Configure a carbon source solution; in the step a, the carbon source solution is prepared by fully mixing polyimide and absolute ethanol at a volume ratio of 1:1.

[0027] b. To make a carbon source liner, take a base plate 1 suitable for 2cmx2cm, said base plate 1 is made of copper; place the base plate 1 on the workbench of the glue homogenizer, and use a pipette to take the carbon source solution configured above and drop it on On the upper surface of the liner, set the parameters of the homogenizer to 400 rpm for the low speed, 1000 rpm for the high speed, and 50 seconds for the spin coating time to complete the processing of the o...

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Abstract

The invention relates to the field of graphene processing, in particular to a method for rapidly preparing patterned doped graphene by ultraviolet laser. The method includes the steps: a preparing carbon source solution; b preparing a carbon source lining plate; c fixedly clamping the carbon source lining plate to a moving platform of a laser processing system and ensuring complete isolation of the carbon source lining plate and air; d processing the carbon source lining plate by laser; e taking out a sample and drying the sample to obtain graphene. An organic carbon layer polyimide coating protected by doped source liquid is processed by ultraviolet laser, chemical bonds of polyimide carbon chains are directly broken by high-energy-density ultraviolet laser, and atoms are doped into reconstructed graphene to generate the patterned doped graphene. The doped graphene generated by the method has energy band gaps, graphene preparation and graphene doping are finished by the same operation, and the method is high in production efficiency and low in cost and has a wide application potential in terms of microelectronic device manufacture.

Description

technical field [0001] The invention relates to the field of graphene processing, in particular to a method for rapidly preparing patterned doped graphene by ultraviolet laser. Background technique [0002] Graphene is considered to be the next-generation microelectronic material that may replace silicon materials. The low impurity concentration in the two-dimensional graphene will lead to high-speed ballistic transport of electrons, making it useful for electronic fast-response switching. However, in electronic devices, the conductivity of the material must be controlled by the gate voltage to generate the switching function. However, due to the zero-bandgap characteristics of graphene, its excellent conductivity cannot change significantly with the change of voltage like traditional silicon-based semiconductor materials. Therefore, the application of graphene in logic circuits still has great difficulties. [0003] Since the energy band structure of graphene is very sens...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B32/184
CPCC01B32/184
Inventor 陈云龙俊宇周双陈新高健刘强汪正平张胜辉
Owner GUANGDONG UNIV OF TECH
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