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Single crystal silicon carbide green and efficient polishing tool and method for polishing single crystal silicon carbide

A single crystal silicon carbide and polishing grinding technology, which is applied to the parts of grinding machine tools, grinding/polishing equipment, grinding machines, etc., can solve the problem of high processing costs, poor environmental friendliness in the polishing process, and is not suitable for batch polishing of silicon carbide single crystals Processing requirements and other issues, to achieve the effect of low processing cost and high-efficiency polishing

Inactive Publication Date: 2019-04-19
HEFEI UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the processing cost of this method is high, it is not suitable for the batch polishing processing requirements of silicon carbide single crystal, and the environmental friendliness of the polishing process is poor
[0008] To sum up, the current several major silicon carbide single crystal polishing methods cannot meet the needs of green and efficient polishing of silicon carbide single crystals.

Method used

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  • Single crystal silicon carbide green and efficient polishing tool and method for polishing single crystal silicon carbide
  • Single crystal silicon carbide green and efficient polishing tool and method for polishing single crystal silicon carbide
  • Single crystal silicon carbide green and efficient polishing tool and method for polishing single crystal silicon carbide

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Experimental program
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Effect test

Embodiment 1

[0044] Single crystal silicon carbide green, high-efficiency polishing abrasive formula:

[0045] Polysaccharide binder: 5g of raw corn starch;

[0046] Abrasive: W5 single crystal aluminum oxide 5g;

[0047] Reinforcement phase: microcrystalline cellulose 0.2g;

[0048] Dispersant: guar gum 0.075g.

[0049] The manufacturing process of single crystal silicon carbide green and high-efficiency polishing abrasive tools:

[0050] (1) Mixture:

[0051] First, weigh the polysaccharide binder, single crystal aluminum oxide abrasive, and reinforcing phase material powders that meet the ratio requirements and mix them into a dry beaker, and use a stirring rod to mix the three powders. Measure guar gum and a certain amount of water and stir to form a guar gum solution. Stir the aforementioned mixed powder and guar gum solution until evenly mixed.

[0052] (2) Curing:

[0053] Pour the mixture into the mold and bake at 130°C for 75min. After the baking is finished, the semi-soli...

Embodiment 2

[0061] Single crystal silicon carbide green, high-efficiency polishing abrasive formula:

[0062] Polysaccharide binder: 5g of raw corn starch;

[0063] #1 Abrasive: W40 single crystal aluminum oxide 10g;

[0064] Reinforcement phase: lignocellulose 0.2g;

[0065] Dispersant: refined carrageenan 0.075g.

[0066] The manufacturing process of single crystal silicon carbide green and high-efficiency polishing abrasive tools:

[0067] (1) Mixture:

[0068] First, weigh the polysaccharide binder, single crystal aluminum oxide abrasive, and reinforcing phase material powders that meet the ratio requirements and mix them into a dry beaker, and use a stirring rod to mix the three powders. Measure refined carrageenan and a certain amount of water and stir to form a guar gum solution. Stir the aforementioned mixed powder and refined carrageenan solution until evenly mixed.

[0069] (2) Curing:

[0070] Pour the mixture into the mold and bake at 160°C for 100min. After the baking...

Embodiment 3

[0078] Single crystal silicon carbide green, high-efficiency polishing abrasive formula:

[0079] Polysaccharide binder: 5g of raw corn starch;

[0080] #1 Abrasive: W5 single crystal aluminum oxide 15g;

[0081] Reinforcement phase: microcrystalline cellulose 0.2g;

[0082] Dispersant: guar gum 0.075g.

[0083] The manufacturing process of single crystal silicon carbide green and high-efficiency polishing abrasive tools:

[0084] (1) Mixture:

[0085] First, weigh the polysaccharide binder, single crystal aluminum oxide abrasive, and reinforcing phase material powders that meet the ratio requirements and mix them into a dry beaker, and use a stirring rod to mix the three powders. Measure guar gum and a certain amount of water and stir to form a guar gum solution. Stir the aforementioned mixed powder and guar gum solution until evenly mixed.

[0086] (2) Curing:

[0087] Pour the mixture into the mold and bake at 150°C for 90min. After the baking is finished, the semi-...

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Abstract

The invention discloses a single crystal silicon carbide green and efficient polishing tool. The tool comprises the following raw materials of, by weight, 48-75% of an abrasive material, 1-2% of a reinforcing phase, 0.35-0.75% of a dispersing agent and the balance polysaccharide binding agents. A method for preparing the single crystal silicon carbide green and efficient polishing tool with the materials above specifically comprises the following steps of material mixing, curing, polishing tool bonding and polishing tool shaping. The invention further discloses a method for polishing single crystal silicon carbide based on the single crystal silicon carbide green and efficient polishing tool prepared through the method. The tool is in contact with single crystal silicon carbide to generatedry friction, and the oxygen partial pressure range of the ambient atmosphere of a friction region ranges from 20 Pa-100 Pa. According to the technical scheme, the single crystal silicon carbide green and efficient polishing tool successfully prepared through the method is environment-friendly, non-toxic and low in manufacturing and polishing processing cost, and and green and efficient polishingon the surface of the single crystal silicon carbide can be realized.

Description

technical field [0001] The invention relates to a preparation and polishing method of a single-crystal silicon carbide green and high-efficiency polishing abrasive, in particular to a single-crystal silicon carbide green and high-efficiency polishing abrasive and a method for polishing single-crystal silicon carbide. Background technique [0002] As a third-generation semiconductor material, silicon carbide single crystal has high thermal conductivity and excellent electrical properties. It is an ideal substrate material for manufacturing high-power switching devices such as IGBTs, ultra-high brightness blue / white LEDs and laser diodes. One of the key basic materials. [0003] The processing surface quality of silicon carbide wafers determines the processing quality of the epitaxial layer on the substrate, which in turn affects the quality, efficiency and life of semiconductor devices. Therefore, silicon carbide single wafers require ultra-smooth surfaces and no damage. How...

Claims

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Application Information

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IPC IPC(8): B24D18/00B24D3/28B24D3/34B24B19/22B24B47/20
CPCB24B19/22B24B47/20B24D3/28B24D3/342B24D18/0009B24D18/0072
Inventor 吴喆吴昊王纯贤刘勇章凯羽汪嘉恒
Owner HEFEI UNIV OF TECH
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