Gallium oxide semiconductor laminated structure and preparation method thereof

A stacked structure, gallium oxide technology, applied in the direction of semiconductor devices, electrical components, circuits, etc., to achieve the effects of inhibiting formation, improving growth advantages, and preventing phase mixing

Active Publication Date: 2019-04-19
上海您惦半导体科技有限公司
View PDF7 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

It can be seen that the above technical solution still adjusts the growth quality of gallium oxide through the aluminum nitride layer, ...

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Gallium oxide semiconductor laminated structure and preparation method thereof
  • Gallium oxide semiconductor laminated structure and preparation method thereof
  • Gallium oxide semiconductor laminated structure and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0043] Using existing MOCVD equipment, using organometallic trimethylgallium as the gallium source, oxygen as the oxygen source, tetrakis(dimethylamino)tin as the doping source, and argon with a purity of more than 99.999% as the carrier gas and growth protection atmosphere, A high-quality tin-doped gallium oxide crystalline film is grown on a conical patterned sapphire substrate.

[0044] The preparation method of gallium oxide crystal film is as follows:

[0045]Step 1: Select a c-plane conical patterned sapphire substrate, firstly, ultrasonically clean the substrate in acetone solution for 3-10 minutes; secondly, ultrasonically clean it in isopropanone solution for 3-10 minutes; The substrate is ultrasonically cleaned in hydrochloric acid and hydrogen peroxide solution, sulfuric acid and hydrogen peroxide solution for 3-10 minutes, and finally the substrate is taken out and dried with nitrogen gas to complete the cleaning.

[0046] Step 2: Manipulating the MOCVD equipment,...

Embodiment 2

[0056] Using existing MOCVD equipment, using organic metal triethylgallium as gallium source, deionized water as oxygen source, argon with a purity of 99.999% or more as carrier gas and growth protection atmosphere, on a hexagonal patterned sapphire substrate Gallium oxide crystal film was grown on it.

[0057] The preparation method of gallium oxide crystal film is as follows:

[0058] Step 1: Select a c-plane hexagonal patterned sapphire substrate, firstly, ultrasonically clean the substrate in acetone solution for 3-10 minutes; secondly, ultrasonically clean it in isopropanone solution for 3-10 minutes; The substrate was ultrasonically cleaned in hydrochloric acid and hydrogen peroxide solution, sulfuric acid and hydrogen peroxide solution for 3-10 minutes, and finally the substrate was taken out and dried with nitrogen gas to complete the cleaning.

[0059] Step 2: Manipulate the MOCVD equipment, send the substrate into the reaction chamber, and let the tray rotate at a s...

Embodiment 3

[0071] Compared with Example 1, other conditions are the same, except that the substrate is a c-plane hemispherical patterned sapphire substrate.

[0072] see Figure 8 , is a schematic diagram of the laminated structure of a gallium oxide crystal film grown on a hemispherical patterned sapphire substrate.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to view more

Abstract

The invention provides a gallium oxide semiconductor laminated structure. The gallium oxide semiconductor laminated structure comprises a patterned sapphire substrate and a gallium oxide crystal filmgrown on the patterned sapphire substrate. The gallium oxide is pure-phase or pure-phase gallium oxide. An actual surface and a c crystal face of the patterned sapphire substrate have a deviation angle of 0-10 degrees, and the thickness of the patterned sapphire substrate is 400 micrometers to 2 millimeters. The graphical sapphire substrate is in one of a groove shape, a hexagon shape, a trilateral shape, a hemisphere shape, a cone shape, a pyramid shape, a circular truncated cone shape, a hexagonal pyramid shape, a triangular pyramid shape or a triangular truncated cone shape or more, and theheight of the graphical structure is 100 nanometers to 2 micrometers. According to the invention, the problem that a mixed phase is easily generated in the process of growing a phase or phase galliumoxide on a heterogeneous substrate is solved, and pure-phase gallium oxide or pure-phase gallium oxide can be obtained on the heterogeneous substrate.

Description

technical field [0001] The invention belongs to the technical field of semiconductor materials and semiconductor optoelectronic devices, and mainly relates to a laminated structure containing gallium oxide crystal film and a preparation method thereof. Background technique [0002] In recent years, wide bandgap semiconductor materials represented by gallium nitride and silicon carbide have been widely used in the preparation of high-power and high-frequency devices. Gallium oxide has a higher band gap than gallium nitride and silicon carbide, and has a higher breakdown voltage. And the Ballyga figure of merit of gallium oxide, as an indicator of low loss, is more than four times that of gallium nitride and silicon carbide, indicating that gallium oxide materials will have better device performance in high-power electronic devices. [0003] According to the classification of crystal structure, gallium oxide has many isomers, which are respectively recorded as α-, β-, γ-, δ-,...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L33/22H01L33/00
CPCH01L33/005H01L33/22
Inventor 王钢李泽琦陈梓敏
Owner 上海您惦半导体科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap