Bonded silicon pin radiation-responsive detector based on tunnel oxide layer and its preparation method

A tunneling oxide layer and detector technology, which is applied in semiconductor devices, final product manufacturing, sustainable manufacturing/processing, etc., can solve problems such as small reverse bias voltage, reduce leakage current, increase drift electric field, increase The effect of gathering speed

Active Publication Date: 2020-04-03
PEKING UNIV
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Problems solved by technology

This creates a contradiction that the thinner the intrinsic layer, the smaller the reverse bias that can be applied

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  • Bonded silicon pin radiation-responsive detector based on tunnel oxide layer and its preparation method
  • Bonded silicon pin radiation-responsive detector based on tunnel oxide layer and its preparation method
  • Bonded silicon pin radiation-responsive detector based on tunnel oxide layer and its preparation method

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Embodiment Construction

[0041] The tunneling oxide layer bonded silicon PIN radiation responsive detector and its preparation method of the present invention will be further described in detail below with reference to the best examples shown in the accompanying drawings.

[0042] Such as figure 1 As shown, the structure of the bonded silicon PIN radiation-responsive detector based on the tunnel oxide layer includes: a bonded silicon substrate composed of a detection layer silicon chip 1, a tunnel oxide layer 2 and a collection layer silicon chip 3, wherein the detection layer silicon chip 1 is N-type silicon with a resistivity of 8 ohm cm and a thickness of 10 microns; the tunnel oxide layer 2 has a thickness of 10 angstroms; the collection layer silicon chip 3 is N-type silicon with a resistivity of 0.001 ohm cm and a thickness of 300 μm; Microns.

[0043] On the front side of silicon wafer 1 of detection layer, there is P + Region 6, to form a PN junction, is covered with a thin aluminum layer 8,...

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Abstract

The invention discloses a bonded silicon PIN radiation response detector based on a tunneling oxide layer and a preparation method thereof. The detector comprises a detection layer silicon wafer and acollection layer silicon wafer bonded together and an ultra-thin silicon dioxide layer located between the two wafers, wherein the front of the detection layer silicon wafer is provided with a P+ region formed by doping, the silicon surface outside the P+ region is covered with a silicon dioxide layer, and the P+ region is covered with a thin metal layer with a field plate structure; the back ofthe collection layer silicon wafer is provided with an N+ region formed by doping completely; the surface of the N+ region is covered with a thick metal layer. The radiation response detector can be used for ultra-fast response measurement in the field of nuclear radiation, and has important applications in the fields of radiation protection and space monitoring.

Description

technical field [0001] The invention relates to a silicon PIN radiation response detector, in particular to a bonding silicon PIN radiation response detector based on a tunneling oxide layer and a preparation method thereof, which can be applied to ultrafast response measurement in the field of nuclear radiation detection. Background technique [0002] With the development of nuclear science and technology, the demand for pulsed radiation measurement in scientific research is increasing, and it has important applications in radiation protection, aerospace, space monitoring and other fields. Compared with steady-state and metastable radiation fields, pulsed radiation fields have the characteristics of high radiation intensity, short radiation generation time, and many types of particles. For this kind of transient process where the radiation occurs for a very short time, it is difficult to use the traditional pulse counting method to study the behavior characteristics of indi...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/117H01L31/18
CPCH01L31/117H01L31/1804Y02P70/50
Inventor 于民刘佳乐王景玺
Owner PEKING UNIV
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