Double-gate thin film transistor, sensor and manufacturing method

Abstract

The invention discloses a dual-gate film transistor, a sensor and a manufacture method, relating to the technical field of electronic sensing. The dual-gate film transistor comprises a stress sensinglayer, wherein the stress sensing layer is arranged between a bottom gate electrode and a top gate electrode, bottom gate electrode insulating layers are respectively arranged between the stress sensing layer and the bottom gate electrode and between the stress sensing layer and the top gate electrode, a first preset voltage is applied to the bottom gate electrode, a second preset voltage is applied to the top gate electrode, the first preset voltage is greater than the second preset voltage, a built-in electric field is formed in the stress sensing layer so as to lower effective gate electrode voltage between the bottom gate electrode and the top gate electrode, and a source leakage current and an external pressure are in inverse ratio; or the first preset voltage is less than the secondpreset voltage, the built-in electric field is formed in the stress sensing layer so as to enhance effective gate electrode voltage between the bottom gate electrode and the top gate electrode, and the source leakage current and the external pressure are in direct ratio.

Description

technical field [0001] The invention relates to the technical field of electronic sensing, in particular to a double-gate thin film transistor, a sensor and a manufacturing method. Background technique [0002] A sensor is a detection device that can feel the measured information, and can transform the sensed information into electrical signals or other required forms of information output according to certain rules, so as to meet the needs of information output, processing, storage, display, Recording and control requirements; Since the 21st century, sensors have become more and more widely used in smart medical care. The connection between sensors and human health is to detect the release of human mechanical energy, such as breathing, heartbeat, blood flow and lung expansion / contraction, etc. , to effectively convert mechanical energy into electrical signals; technologies for detecting mechanical energy include piezoelectric effect, triboelectric effect, magnetostrictive e...

AI Technical Summary

Problems solved by technology

[0004] In view of this, the embodiment of the present invention provides a double-gate thin film transistor, a sensor and a manufacturing method, the main purpose of which is to solve the problem that most of the existing pressure sensors use thin films composed of piezoelectric materials, in order to effectively amplify the voltage of the pressure sensor. To increase the sensitivity of the signal, it is necessary to lay a large area of ​​film, and a large number of circuit traces are inserted in the film, which seriously affects the integration and lightness of the sensor as a whole.

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